Solid State Lighting I
Proc. SPIE 6841, Limits on the maximum attainable efficiency for solid-state lighting, 684102 (15 January 2008); doi: 10.1117/12.758767
Proc. SPIE 6841, High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting, 684103 (4 December 2007); doi: 10.1117/12.755420
Proc. SPIE 6841, Accelerated life test for high-power white LED based on spectroradiometric measurement, 684104 (4 January 2008); doi: 10.1117/12.755708
Proc. SPIE 6841, The influence of substrate nucleation on HVPE-grown GaN thick films, 684105 (4 January 2008); doi: 10.1117/12.760035
Solid State Lighting II
Proc. SPIE 6841, Phosphor coating technique with slurry method in application of white LED, 684106 (15 January 2008); doi: 10.1117/12.757337
Proc. SPIE 6841, Improvement of GaN-based light emitting diodes performance grown on sapphire substrates patterned by wet etching, 684107 (4 January 2008); doi: 10.1117/12.760029
Proc. SPIE 6841, Optimized design on high-power GaN-based micro-LEDs, 684108 (4 January 2008); doi: 10.1117/12.759302
Proc. SPIE 6841, Apparent brightness of LEDs under different dimming methods, 684109 (4 January 2008); doi: 10.1117/12.756014
Solid State Lighting III
Proc. SPIE 6841, Research and fabrication of high power LEDs with transparent electrodes, 68410B (4 January 2008); doi: 10.1117/12.765244
Solid State Lighting IV
Proc. SPIE 6841, Determination of spontaneous emission quantum efficiency in InGaAs/GaAs quantum well structures, 68410D (15 January 2008); doi: 10.1117/12.759592
Proc. SPIE 6841, Design and optimization of dielectric optical coatings for GaN based high bright LEDs, 68410E (4 January 2008); doi: 10.1117/12.765228
Proc. SPIE 6841, Characterization of bulk ZnO single crystal grown by a CVT method, 68410F (4 January 2008); doi: 10.1117/12.759322
Proc. SPIE 6841, Color filter-less technology of LED back light for LCD-TV, 68410G (4 January 2008); doi: 10.1117/12.760045
Solid State Lighting V
Proc. SPIE 6841, Understanding GaN nucleation layer evolution on sapphire and its impact on GaN dislocation density, 68410H (15 January 2008); doi: 10.1117/12.758766
Proc. SPIE 6841, Native deep level defects in ZnO single crystal grown by CVT method, 68410I (4 January 2008); doi: 10.1117/12.760142
Proc. SPIE 6841, Novel photonic crystal structure GaN-based light-emitting diodes, 68410J (4 January 2008); doi: 10.1117/12.758788
Proc. SPIE 6841, Characterization of AlGaN on GaN template grown by MOCVD, 68410K (4 January 2008); doi: 10.1117/12.755635
Solid State Lighting VI
Proc. SPIE 6841, Current spreading analysis in vertical electrode GaN-based blue LEDs, 68410L (15 January 2008); doi: 10.1117/12.756517
Proc. SPIE 6841, The effects of sapphire substrates processes to the LED efficiency, 68410M (4 January 2008); doi: 10.1117/12.759280
Proc. SPIE 6841, Effect of indium tin oxide (ITO) current spreading layer on the current uniformity of vertical structure GaN-based light-emitting diodes, 68410N (4 January 2008); doi: 10.1117/12.760221
Poster Session
Proc. SPIE 6841, Investigation on optical parameter of fused and tapered all-fiber coupler, 68410Q (4 January 2008); doi: 10.1117/12.754773
Proc. SPIE 6841, New approach for 1w high output LED package using 3D lead frame, 68410R (15 January 2008); doi: 10.1117/12.756339
Proc. SPIE 6841, AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers, 68410S (4 January 2008); doi: 10.1117/12.756715
Proc. SPIE 6841, High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate, 68410T (4 January 2008); doi: 10.1117/12.756774
Proc. SPIE 6841, The design of microscope field illumination system based on LED, 68410U (15 January 2008); doi: 10.1117/12.757727
Proc. SPIE 6841, Plasma-induced damage in GaN-based light emitting diodes, 68410X (4 January 2008); doi: 10.1117/12.759809
Proc. SPIE 6841, Research on color matching of LED backlight for large-color-gamut LCD application, 68410Y (4 January 2008); doi: 10.1117/12.760014
Proc. SPIE 6841, Thermal analysis of high power GaN-based light emitting diode, 68410Z (4 January 2008); doi: 10.1117/12.760019
Proc. SPIE 6841, Study of the influence of photon recycling on extraction efficiency in a slab light-emitting diode, 684110 (4 January 2008); doi: 10.1117/12.761470
Solar Energy Technology and Applications I
Proc. SPIE 6841, New education opportunities and research activities at UNSW, 684111 (15 January 2008); doi: 10.1117/12.747674
Proc. SPIE 6841, One-power IC with MPPT design, 684113 (4 January 2008); doi: 10.1117/12.753920
Solar Energy Technology and Applications II
Proc. SPIE 6841, Thermal test and analysis of concentrator solar cells, 684117 (4 January 2008); doi: 10.1117/12.755323
Proc. SPIE 6841, Optimization procedure for design of heliostat field layout of a 1MWe solar tower thermal power plant, 684119 (15 January 2008); doi: 10.1117/12.755285
Solar Energy Technology and Applications III
Proc. SPIE 6841, The key factors on silicon-based tandem thin film solar cells, 68411B (4 January 2008); doi: 10.1117/12.785143
Proc. SPIE 6841, Design and implementation for solar light-collecting controller, 68411C (4 January 2008); doi: 10.1117/12.756389
Proc. SPIE 6841, Study of stability for a-Si:H thin-film solar cells on polyimide substrates, 68411D (4 January 2008); doi: 10.1117/12.756117
Proc. SPIE 6841, Growth of GaSb and GaInAsSb layers for thermophotovoltaic cells by liquid phase epitaxy, 68411E (4 January 2008); doi: 10.1117/12.755597
Solar Energy Technology and Applications IV
Proc. SPIE 6841, Improvement of power efficiency of polymer solar cell based on P3HT: PCBM blends, 68411G (4 January 2008); doi: 10.1117/12.756572
Proc. SPIE 6841, The effect of electrical properties for InGaN and InN by high-energy particle irradiation (Notice of Removal), 68411H (4 January 2008); doi: 10.1117/12.756628
Proc. SPIE 6841, Organic photovoltaic devices from discotic materials, 68411I (4 January 2008); doi: 10.1117/12.757258
Solar Energy Technology and Applications V
Proc. SPIE 6841, Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition, 68411M (4 January 2008); doi: 10.1117/12.757818
Solar Energy Technology and Applications VI
Proc. SPIE 6841, Structure design of nano-TiO2 electrode in dye-sensitized solar cells, 68411Q (4 January 2008); doi: 10.1117/12.759573
Proc. SPIE 6841, Development of single and micromorph tandem solar cells in n-i-p configuration with high-pressure RF-PECVD deposited doped and active layers, 68411R (4 January 2008); doi: 10.1117/12.765754
Poster Session
Proc. SPIE 6841, Reduction of sunlight reflection on surfaces of solar cells by fabricating hexagonal lattices in multicrystalline silicon, 68411V (4 January 2008); doi: 10.1117/12.755940
Proc. SPIE 6841, Study of photovoltaic characteristics of diffuse-processed porous silicon and ion-implanted porous silicon, 68411W (4 January 2008); doi: 10.1117/12.756673
Proc. SPIE 6841, Defect states of hydrogenated nanocrystalline silicon studied by surface photovoltage spectroscopy, 68411X (4 January 2008); doi: 10.1117/12.757676
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