PROCEEDINGS VOLUME 6894
INTEGRATED OPTOELECTRONIC DEVICES 2008 | 19-24 JANUARY 2008
Gallium Nitride Materials and Devices III
IN THIS VOLUME

0 Sessions, 52 Papers, 0 Presentations
Growth I  (2)
Growth II  (3)
Lasers  (4)
LEDs I  (2)
LEDs II  (2)
LEDs III  (3)
LEDs IV  (2)
LEDs V  (4)
FETs I  (4)
FETs II  (3)
FETs III  (2)
Proceedings Volume 6894 is from: Logo
INTEGRATED OPTOELECTRONIC DEVICES 2008
19-24 January 2008
San Jose, California, United States
Front Matter: Volume 6894
Proc. SPIE 6894, Front Matter: Volume 6894, 689401 (11 March 2008); doi: 10.1117/12.791601
Growth I
Proc. SPIE 6894, The role of anisotropy for defect properties in a-plane GaN, 689403 (15 February 2008); doi: 10.1117/12.763596
Proc. SPIE 6894, A thick GaN growth using GaN/Si(111) template by hydride vapor phase epitaxy(HVPE), 689406 (28 February 2008); doi: 10.1117/12.765705
Growth II
Proc. SPIE 6894, Modeling and experimental analysis of RPCVD based nitride film growth, 689407 (15 February 2008); doi: 10.1117/12.762537
Proc. SPIE 6894, Epitaxial lateral overgrowth of GaN on AlGaN/(111)Si micropillar array fabricated by polystyrene microsphere lithography, 689408 (15 February 2008); doi: 10.1117/12.764475
Proc. SPIE 6894, Nanopatterning and selective area epitaxy of GaN on Si substrate, 68940A (15 February 2008); doi: 10.1117/12.762149
Growth and Characterization
Proc. SPIE 6894, Investigation of charge trapping at the oxide/semiconductor interface for MBE-grown GaN films, 68940B (15 February 2008); doi: 10.1117/12.768041
Proc. SPIE 6894, Defect and emission distributions in bulk GaN grown in polar and nonpolar directions: a comparative analysis, 68940D (15 February 2008); doi: 10.1117/12.767628
Characterization
Proc. SPIE 6894, Photoluminescence study of near-surface GaN/AlN superlattices, 68940G (28 February 2008); doi: 10.1117/12.759452
SPIN and Photon Propagation
Proc. SPIE 6894, Dynamics of intervalley transitions and propagation of coherent acoustic phonons in GaN single crystals studied by femtosecond pump-probe spectroscopy, 68940K (28 February 2008); doi: 10.1117/12.769522
Proc. SPIE 6894, Band coupling model of electron and hole mediated ferromagnetism in semiconductors: the case of GaN, 68940L (15 February 2008); doi: 10.1117/12.763494
Proc. SPIE 6894, Spin-orbit coupling in AlGaN/AlN/GaN heterostructures with a polarization induced two-dimensional electron gas, 68940M (15 February 2008); doi: 10.1117/12.763181
Lasers
Proc. SPIE 6894, Structural defects and degradation of high-power pure-blue GaN-based laser diodes, 68940N (15 February 2008); doi: 10.1117/12.767769
Proc. SPIE 6894, Degradation modes of high-power InGaN/GaN laser diodes on low-defect GaN substrates, 68940O (15 February 2008); doi: 10.1117/12.767599
Proc. SPIE 6894, 16 nm tuning range of blue InGaN laser diodes achieved by 200 K temperature increase, 68940Q (28 February 2008); doi: 10.1117/12.762871
Proc. SPIE 6894, Why InGaN laser-diode degradation is accompanied by the improvement of its thermal stability, 68940R (15 February 2008); doi: 10.1117/12.762220
Detectors, Lighting, and LEDs
Proc. SPIE 6894, AlN/GaN-superlattice structures for the fabrication of intersubband detectors in the telecom wavelength range, 68940S (28 February 2008); doi: 10.1117/12.762123
Proc. SPIE 6894, Optimization of semipolar GaInN/GaN blue/green light emitting diode structures on {1-101} GaN side facets, 68940V (28 February 2008); doi: 10.1117/12.763400
LEDs I
Proc. SPIE 6894, RGB LED with smart control in the backlight and lighting, 68940W (15 February 2008); doi: 10.1117/12.767433
Proc. SPIE 6894, Highly reliable and bright GaN vertical LED on metal alloy substrate using corrugated pyramid shaped surface technology, 68940X (15 February 2008); doi: 10.1117/12.768191
LEDs II
Proc. SPIE 6894, High-power GaN LED chip with low thermal resistance, 689411 (15 February 2008); doi: 10.1117/12.768595
Proc. SPIE 6894, On chip surge protection for GaN-power LEDs by ZnO thin film varistor, 689412 (15 February 2008); doi: 10.1117/12.764748
LEDs III
Proc. SPIE 6894, Recent status of white LEDs and nitride LDs, 689414 (15 February 2008); doi: 10.1117/12.764404
Proc. SPIE 6894, True-blue InGaN laser for pico size projectors, 689417 (15 February 2008); doi: 10.1117/12.761720
Proc. SPIE 6894, Investigation of cross-sectional potential distribution in GaN-based field effect transistors by Kelvin probe force microscopy, 689418 (15 February 2008); doi: 10.1117/12.765947
LEDs IV
Proc. SPIE 6894, III-nitride based deep ultraviolet light sources, 689419 (15 February 2008); doi: 10.1117/12.769128
Proc. SPIE 6894, AZO films with Al nano-particles to improve the light extraction efficiency of GaN-based light-emitting diodes, 68941C (15 February 2008); doi: 10.1117/12.765633
LEDs V
Proc. SPIE 6894, InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers, 68941D (15 February 2008); doi: 10.1117/12.766915
Proc. SPIE 6894, Highly efficient InGaN/GaN LEDs with double-sided textured surfaces and omni-directional mirror structure, 68941E (15 February 2008); doi: 10.1117/12.763248
Proc. SPIE 6894, Development of UV-photocathodes using GaN film on Si substrate, 68941F (15 February 2008); doi: 10.1117/12.770233
Proc. SPIE 6894, 1/f noise in nitride-based spintronic devices, 68941G (15 February 2008); doi: 10.1117/12.762348
FETs I
Proc. SPIE 6894, Reliability modeling of high voltage AlGaN/GaN and GaAs field-effect transistors, 68941H (6 February 2008); doi: 10.1117/12.764958
Proc. SPIE 6894, Progress in GaN devices performances and reliability, 68941I (28 February 2008); doi: 10.1117/12.765467
Proc. SPIE 6894, High temperature performance measurement and analysis of GaN HEMTs, 68941J (28 February 2008); doi: 10.1117/12.764255
Proc. SPIE 6894, Use of quantum 1/f noise formulas in the reliability characterization of nitride-based heterostructures, 68941K (15 February 2008); doi: 10.1117/12.764083
FETs II
Proc. SPIE 6894, Millimeter-wave GaN HFET technology, 68941L (15 February 2008); doi: 10.1117/12.767574
Proc. SPIE 6894, Status of GaN HEMT performance and reliability, 68941M (6 February 2008); doi: 10.1117/12.763781
Proc. SPIE 6894, Piezoelectric quantum 1/f noise in nitride-based heterostructures, 68941N (28 February 2008); doi: 10.1117/12.762387
FETs III
Proc. SPIE 6894, Recent progress of GaN electronic devices for wireless communication system, 68941Q (28 February 2008); doi: 10.1117/12.772152
Proc. SPIE 6894, AlxIn1-xN/GaN heterostructure field effect transistors, 68941R (15 February 2008); doi: 10.1117/12.771297
Poster Session
Proc. SPIE 6894, GaN Schottky barrier and metal-semiconductor-metal photodetectors with in situ SiNx nano-network, 68941S (15 February 2008); doi: 10.1117/12.764245
Proc. SPIE 6894, Comparative study of electroluminescence efficiency of blue (In,Ga)N and red GaAs quantum-well diodes, 68941T (15 February 2008); doi: 10.1117/12.758989
Proc. SPIE 6894, Infrared reflectance of optical phonon modes in AlGaN epitaxial layers grown on sapphire substrates, 68941U (15 February 2008); doi: 10.1117/12.760296
Proc. SPIE 6894, AlGaN/GaN multiple quantum wells grown by atomic layer deposition, 68941V (15 February 2008); doi: 10.1117/12.762158
Proc. SPIE 6894, AlGaN/SiC heterojunction bipolar transistor, 68941W (15 February 2008); doi: 10.1117/12.763143
Proc. SPIE 6894, Epitaxial lateral overgrowth of (11¯00) m-plane GaN on m-plane 6H-SiC by metalorganic chemical vapor deposition, 689420 (28 February 2008); doi: 10.1117/12.763848
Proc. SPIE 6894, Modification of the anomalous V-shaped and S-shaped temperature dependent photon energy in AlxGa1-xN (0<x&#8804;0.38) nanoheterostructures using a nonbonding laser lift-off (NBLLO) technique, 689421 (15 February 2008); doi: 10.1117/12.764552
Proc. SPIE 6894, Comparative study of deep levels in GaN grown on different templates, 689424 (15 February 2008); doi: 10.1117/12.767834
Proc. SPIE 6894, Evolution of surface morphology of polar and nonpolar GaN thin films during photoelectrochemical etching, 689425 (15 February 2008); doi: 10.1117/12.762383
Proc. SPIE 6894, Comparison of various gate dielectrics on the performance of AlGaN/GaN HFETS, 689426 (28 February 2008); doi: 10.1117/12.763688
Proc. SPIE 6894, Optical properties of polar, nonpolar, and semipolar InGaN/GaN multiple quantum wells on sapphire, 689428 (15 February 2008); doi: 10.1117/12.763260
Proc. SPIE 6894, Characterization of low-cost organic phosphor for white light-emitting diode, 689429 (15 February 2008); doi: 10.1117/12.790933
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