PROCEEDINGS VOLUME 6895
INTEGRATED OPTOELECTRONIC DEVICES 2008 | 19-24 JANUARY 2008
Zinc Oxide Materials and Devices III
Proceedings Volume 6895 is from: Logo
INTEGRATED OPTOELECTRONIC DEVICES 2008
19-24 January 2008
San Jose, California, United States
Front Matter: Volume 6985
Proc. SPIE 6895, Front Matter: Volume 6895, 689501 (11 March 2008); doi: 10.1117/12.791602
ZnO Properties and Doping
Proc. SPIE 6895, Optical and structural properties of homoepitaxial ZnO, 689502 (15 February 2008); doi: 10.1117/12.775217
Proc. SPIE 6895, Properties of homoepitaxial ZnO and ZnO:P thin films grown by pulsed-laser deposition, 689505 (15 February 2008); doi: 10.1117/12.768614
Proc. SPIE 6895, Plasma-assisted epitaxial growth of nitrogen-doped and high-quality ZnO thin films, 689506 (15 February 2008); doi: 10.1117/12.774945
ZnO Thin Film Growth and Devices
Proc. SPIE 6895, ZnCdO/ZnO hetero- and quantum well structures for light-emitting applications, 68950C (15 February 2008); doi: 10.1117/12.774973
Proc. SPIE 6895, MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy, 68950D (15 February 2008); doi: 10.1117/12.774974
ZnO Thin Film Based Devices I
Proc. SPIE 6895, ZnO hybrid microcavities grown by plasma assisted molecular beam epitaxy, 68950I (15 February 2008); doi: 10.1117/12.762299
Proc. SPIE 6895, Characterization of an optically pumped ZnO-based 3rd order distributed feedback laser, 68950J (15 February 2008); doi: 10.1117/12.762128
Proc. SPIE 6895, ZnO cone-shaped blue light emitting diodes, 68950N (15 February 2008); doi: 10.1117/12.778558
Proc. SPIE 6895, Light-emitting diodes based on n-ZnO nano-wires and p-type organic semiconductors, 68950O (15 February 2008); doi: 10.1117/12.771654
ZnO Thin Film Based Devices II
Proc. SPIE 6895, Controlled growth of ZnO nanowires by nanoparticle-assisted laser ablation deposition, 68950S (15 February 2008); doi: 10.1117/12.760922
Proc. SPIE 6895, ZnO nanowires for solid state lightening: from epitaxy and collective integration to optical and electrical characterization, 68950U (15 February 2008); doi: 10.1117/12.765480
Proc. SPIE 6895, Phosphorous doped ZnO nanowires: acceptor-related cathodoluminescence and p-type conducting FET-characteristics, 68950V (15 February 2008); doi: 10.1117/12.763435
Proc. SPIE 6895, P-type ZnO thin films via phosphorus doping, 68950W (15 February 2008); doi: 10.1117/12.785467
Proc. SPIE 6895, Field effect controlled ferromagnetism in transition metal doped ZnO, 68950X (7 March 2008); doi: 10.1117/12.785469
Poster Session
Proc. SPIE 6895, Effect of ion damage on optical properties of ZnO films grown by plasma-assisted MBE, 68950Y (15 February 2008); doi: 10.1117/12.764132
Proc. SPIE 6895, MOCVD growth of ZnO nanostructures using Au droplets as catalysts, 68950Z (7 March 2008); doi: 10.1117/12.775632
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