PROCEEDINGS VOLUME 6909
INTEGRATED OPTOELECTRONIC DEVICES 2008 | 19-24 JANUARY 2008
Novel In-Plane Semiconductor Lasers VII
Proceedings Volume 6909 is from: Logo
INTEGRATED OPTOELECTRONIC DEVICES 2008
19-24 January 2008
San Jose, California, United States
Front Matter
Proc. SPIE 6909, Front Matter: Volume 6909, 690901 (5 February 2008); doi: 10.1117/12.791663
Quantum Dots and InGaAsN
Proc. SPIE 6909, High-performance 1300-nm InAs/GaAs quantum-dot lasers, 690903 (29 January 2008); doi: 10.1117/12.765735
Proc. SPIE 6909, High performance quantum dot distributed feedback laser diodes around 1.15 µm, 690904 (31 January 2008); doi: 10.1117/12.763157
Proc. SPIE 6909, High performance 1.3 µm GaInNAs quantum well lasers on GaAs, 690905 (29 January 2008); doi: 10.1117/12.766357
Quantum Dots and Modelocking
Proc. SPIE 6909, Reconfigurable monolithic quantum dot passively mode-locked lasers, 690908 (5 February 2008); doi: 10.1117/12.767328
Proc. SPIE 6909, Monolithic mode-locked quantum dot lasers, 690909 (29 January 2008); doi: 10.1117/12.768247
Proc. SPIE 6909, Low-noise monolithic mode-locked semiconductor lasers through low-dimensional structures, 69090A (31 January 2008); doi: 10.1117/12.768641
Integration
Proc. SPIE 6909, High performance laser arrays for tunable and parallel link applications, 69090B (29 January 2008); doi: 10.1117/12.768593
Proc. SPIE 6909, Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth, 69090C (29 January 2008); doi: 10.1117/12.764538
Proc. SPIE 6909, Three-guide coupled rectangular ring lasers with total internal reflection mirrors, 69090D (29 January 2008); doi: 10.1117/12.762030
Nitrides
Proc. SPIE 6909, A GaN-based surface-emitting laser with 45degree-inclined mirror in horizontal cavity, 69090F (29 January 2008); doi: 10.1117/12.762502
Proc. SPIE 6909, Characterization of AlInGaN-based 405nm distributed feedback laser diodes, 69090G (29 January 2008); doi: 10.1117/12.767731
THz Lasers
Proc. SPIE 6909, High-temperature and high-power operation of terahertz quantum-cascade lasers, 69090I (29 January 2008); doi: 10.1117/12.768298
Silicon Photonics I: Joint Session with Conference 6898
Proc. SPIE 6909, Monolithically integrated III-Sb based laser diodes grown on miscut Si substrates, 69090M (5 February 2008); doi: 10.1117/12.775340
Proc. SPIE 6909, On-chip integration of InGaAs/GaAs quantum dot lasers with waveguides and modulators on silicon, 69090N (5 February 2008); doi: 10.1117/12.765889
Silicon Photonics II: Joint Session with Conference 6898
Proc. SPIE 6909, Recess integration of micro-cleaved laser diode platelets with dielectric waveguides on silicon, 69090O (29 January 2008); doi: 10.1117/12.773594
High Brightness
Proc. SPIE 6909, High-brightness diode lasers with very narrow vertical divergence, 69090P (5 February 2008); doi: 10.1117/12.760874
Proc. SPIE 6909, Highly reliable, high-brightness 915nm laser diodes for fiber laser applications, 69090Q (29 January 2008); doi: 10.1117/12.763335
Proc. SPIE 6909, Asymmetric Al-free active region laser structure for high-brightness tapered lasers at 975 nm, 69090R (1 February 2008); doi: 10.1117/12.763404
Proc. SPIE 6909, High reliability, high power arrays of 808 nm single mode diode lasers employing various quantum well structures, 69090S (29 January 2008); doi: 10.1117/12.763208
Proc. SPIE 6909, Grazing-incidence-slab semiconductor laser (GRISSL), 69090T (5 February 2008); doi: 10.1117/12.768716
Mid-IR Lasers
Proc. SPIE 6909, InAs-based quantum-cascade lasers, 69090U (29 January 2008); doi: 10.1117/12.767653
Proc. SPIE 6909, Short-wavelength quantum cascade lasers, 69090V (29 January 2008); doi: 10.1117/12.775316
Proc. SPIE 6909, Interband cascade laser progress, 69090X (29 January 2008); doi: 10.1117/12.766908
Quantum Cascade Lasers I
Proc. SPIE 6909, Bloch gain in quantum cascade lasers, 69090Z (29 January 2008); doi: 10.1117/12.774258
Proc. SPIE 6909, Intracavity amplitude modulation of quantum-cascade lasers using intersubband absorption in the active region under reverse bias, 690910 (29 January 2008); doi: 10.1117/12.767838
Quantum Cascade Lasers II
Proc. SPIE 6909, On the coherence/incoherence of electron transport in semiconductor heterostructure optoelectronic devices, 690912 (29 January 2008); doi: 10.1117/12.762648
Proc. SPIE 6909, Multimode regimes and instabilities in quantum-cascade lasers, 690914 (29 January 2008); doi: 10.1117/12.768142
Proc. SPIE 6909, Coherent coupling of mid-infrared quantum cascade lasers, 690916 (29 January 2008); doi: 10.1117/12.773352
High Power
Proc. SPIE 6909, High brightness quantum well and quantum dot tapered lasers, 690918 (29 January 2008); doi: 10.1117/12.787115
Proc. SPIE 6909, Master oscillator power amplifier 3D assemblies based on grating coupled laser diodes, 690919 (29 January 2008); doi: 10.1117/12.763094
Proc. SPIE 6909, External cavity phase-locked semiconductor tapered lasers, 69091A (29 January 2008); doi: 10.1117/12.763398
Proc. SPIE 6909, High-power laser arrays with 100% fill factor emission facet, 69091B (29 January 2008); doi: 10.1117/12.761799
Applications Driven
Proc. SPIE 6909, 700-730 nm InGaAsP quantum well ridge-waveguide lasers, 69091C (29 January 2008); doi: 10.1117/12.759643
Proc. SPIE 6909, Chirped comb generation in frequency shifted feedback DFB lasers, 69091D (29 January 2008); doi: 10.1117/12.764792
Proc. SPIE 6909, High power DFB lasers for D1 and D2 caesium absorption spectroscopy and atomic clocks, 69091E (29 January 2008); doi: 10.1117/12.761092
Proc. SPIE 6909, Narrow linewidth and demonstration of saturation spectra of the Cesium at 852 nm with high power Al-free DFB laser diodes, 69091F (1 February 2008); doi: 10.1117/12.763432
Proc. SPIE 6909, Integrated 1060nm MOPA pump source for high-power green light emitters in display technology, 69091G (29 January 2008); doi: 10.1117/12.761210
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