Proceedings Volume 6921 is from: Logo
SPIE ADVANCED LITHOGRAPHY
24-29 February 2008
San Jose, California, United States
Front Matter: Volume 6921
Proc. SPIE 6921, Front Matter: Volume 6921, 692101 (22 April 2008); doi: 10.1117/12.797112
Keynote Session
Proc. SPIE 6921, Selete's EUV program: progress and challenges, 692102 (20 March 2008); doi: 10.1117/12.772625
Proc. SPIE 6921, Breaking the limits: combination of electron beam lithography and nanoimprint lithography for production of next-generation magnetic media and optical media, 692103 (20 March 2008); doi: 10.1117/12.782461
Nanoimprint I
Proc. SPIE 6921, Study of nanoimprint lithography for applications toward 22nm node CMOS devices, 692104 (14 March 2008); doi: 10.1117/12.771149
Proc. SPIE 6921, Full-field imprinting of sub-40 nm patterns, 692107 (20 March 2008); doi: 10.1117/12.775115
Proc. SPIE 6921, Fabrication and test of nano crossbar switches/MOSFET hybrid circuits by imprinting lithography, 692108 (14 March 2008); doi: 10.1117/12.774144
Proc. SPIE 6921, Minimizing linewidth roughness for 22-nm node patterning with step-and-flash imprint lithography, 692109 (14 March 2008); doi: 10.1117/12.772956
Nanoimprint II
Proc. SPIE 6921, Chemical and mechanical properties of UV-cured nanoimprint resists and release layer interactions, 69210B (14 March 2008); doi: 10.1117/12.772591
Proc. SPIE 6921, Dual damascene BEOL processing using multilevel step and flash imprint lithography, 69210C (20 March 2008); doi: 10.1117/12.772908
Proc. SPIE 6921, High resolution nanoimprint templates for dual damascene: fabrication and imprint results, 69210D (26 March 2008); doi: 10.1117/12.772295
Proc. SPIE 6921, Interfacial adhesion studies for step and flash imprint lithography, 69210E (20 March 2008); doi: 10.1117/12.772797
Proc. SPIE 6921, Sub-wavelength optical diffraction and photoacoustic metrologies for the characterisation of nanoimprinted structures, 69210F (20 March 2008); doi: 10.1117/12.772545
EBDW I
Proc. SPIE 6921, EBDW technology for EB shuttle at 65nm node and beyond, 69210H (20 March 2008); doi: 10.1117/12.772469
Proc. SPIE 6921, E-beam direct write alignment strategies for the next generation node, 69210I (26 March 2008); doi: 10.1117/12.771585
Proc. SPIE 6921, Gate edge roughness in electron beam direct write and its influence to device characteristics, 69210J (20 March 2008); doi: 10.1117/12.772649
Proc. SPIE 6921, Proton beam writing: a platform technology for nano-integration, 69210K (20 March 2008); doi: 10.1117/12.772607
EUV Systems
Proc. SPIE 6921, Nikon EUVL development progress update, 69210M (26 March 2008); doi: 10.1117/12.772444
Proc. SPIE 6921, Canon's development status of EUVL technologies, 69210N (26 March 2008); doi: 10.1117/12.769894
Proc. SPIE 6921, Imaging performance of the EUV alpha semo tool at IMEC, 69210O (20 March 2008); doi: 10.1117/12.771983
Proc. SPIE 6921, Development status of projection optics and illumination optics for EUV1, 69210Q (20 March 2008); doi: 10.1117/12.772435
Proc. SPIE 6921, Smoothing properties of single and multilayer coatings: a method to smoothen substrates, 69210R (26 March 2008); doi: 10.1117/12.772479
EUV Source I
Proc. SPIE 6921, CO2 laser-produced Sn-plasma source for high-volume manufacturing EUV lithography, 69210T (20 March 2008); doi: 10.1117/12.771959
Proc. SPIE 6921, Progress on Xe-DPP source development for alpha phase, 69210U (21 March 2008); doi: 10.1117/12.772830
Proc. SPIE 6921, Sn DPP source-collector modules: status of alpha resources, beta developments, and the scalability to HVM, 69210V (27 March 2008); doi: 10.1117/12.772633
Proc. SPIE 6921, Parametric tradeoffs in laser plasma sources for EUV lithography: debris versus radiators, 69210X (21 March 2008); doi: 10.1117/12.772613
EUV Source II
Proc. SPIE 6921, Advanced laser-produced EUV light source for HVM with conversion efficiency of 5-7% and B-field mitigation of ions, 69210Y (20 March 2008); doi: 10.1117/12.769086
Proc. SPIE 6921, Characteristics of a minimum-debris optimum conversion efficiency tin-based LPP source, 692110 (27 March 2008); doi: 10.1117/12.771641
Proc. SPIE 6921, Thermal and optical characterization of collectors integrated in a Sn-DPP based SoCoMo, 692112 (20 March 2008); doi: 10.1117/12.772977
Proc. SPIE 6921, Multidimensional simulation and optimization of hybrid laser and discharge plasma devices for EUV lithography, 692113 (20 March 2008); doi: 10.1117/12.771218
EUV Contamination
Proc. SPIE 6921, Radiation-induced defect formation and reactivity of model TiO2 capping layers with MMA: a comparison with Ru, 692114 (21 March 2008); doi: 10.1117/12.772798
Proc. SPIE 6921, Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials, 692115 (27 March 2008); doi: 10.1117/12.772412
Proc. SPIE 6921, Carbon contamination of EUV mask: film characterization, impact on lithographic performance, and cleaning, 692116 (20 March 2008); doi: 10.1117/12.771978
Proc. SPIE 6921, Accelerated lifetime metrology of EUV multilayer mirrors in hydrocarbon environments, 692117 (20 March 2008); doi: 10.1117/12.772627
Proc. SPIE 6921, Mo/Si multilayers with enhanced TiO2- and RuO2-capping layers, 692118 (20 March 2008); doi: 10.1117/12.772653
EUV Imaging
Proc. SPIE 6921, Smoothing based fast model for images of isolated buried EUV multilayer defects, 692119 (20 March 2008); doi: 10.1117/12.771530
Proc. SPIE 6921, Aberration budget in extreme ultraviolet lithography, 69211A (20 March 2008); doi: 10.1117/12.771602
Proc. SPIE 6921, EUV pattern shift compensation strategies, 69211B (20 March 2008); doi: 10.1117/12.772640
Proc. SPIE 6921, Study of system performance in SFET, 69211C (27 March 2008); doi: 10.1117/12.771952
Proc. SPIE 6921, Effects of aberration and flare on lithographic performance of SFET, 69211D (21 March 2008); doi: 10.1117/12.771626
EUV Resists: Joint Session with Conference 6923
Proc. SPIE 6921, Resolution, LER, and sensitivity limitations of photoresists, 69211E (21 March 2008); doi: 10.1117/12.772763
Proc. SPIE 6921, Evaluation of EUV resist materials for use at the 32 nm half-pitch node, 69211F (20 March 2008); doi: 10.1117/12.772943
Proc. SPIE 6921, Extreme ultraviolet resist outgassing and its effect on nearby optics, 69211G (28 March 2008); doi: 10.1117/12.772670
Proc. SPIE 6921, Quantitative measurement of outgas products from EUV photoresists, 69211H (20 March 2008); doi: 10.1117/12.772686
Nanoimprint III
Proc. SPIE 6921, Etching of 42 nm and 32 nm half-pitch features patterned using step and Flash imprint lithography, 69211K (20 March 2008); doi: 10.1117/12.775586
Proc. SPIE 6921, High resolution defect inspection of step and flash imprint lithography for 32 nm half-pitch patterning, 69211L (21 March 2008); doi: 10.1117/12.773970
Proc. SPIE 6921, Porosity characteristics of ultra-low dielectric insulator films directly patterned by nano-imprint lithography, 69211M (28 March 2008); doi: 10.1117/12.773004
Proc. SPIE 6921, A method for fabricating below 22nm feature patterns in quartz mold, 69211N (20 March 2008); doi: 10.1117/12.771561
Parallel E-Beam Systems
Proc. SPIE 6921, Projection maskless lithography (PML2): proof-of-concept setup and first experimental results, 69211O (20 March 2008); doi: 10.1117/12.772726
Proc. SPIE 6921, MAPPER: high throughput maskless lithography, 69211P (3 April 2008); doi: 10.1117/12.771965
Proc. SPIE 6921, Patterning fidelity on low-energy multiple-electron-beam direct write lithography, 69211R (20 March 2008); doi: 10.1117/12.771392
EBDW II
Proc. SPIE 6921, MAGIC: a European program to push the insertion of maskless lithography, 69211S (28 March 2008); doi: 10.1117/12.772472