PROCEEDINGS VOLUME 6922
SPIE ADVANCED LITHOGRAPHY | 24-29 FEBRUARY 2008
Metrology, Inspection, and Process Control for Microlithography XXII
Proceedings Volume 6922 is from: Logo
SPIE ADVANCED LITHOGRAPHY
24-29 February 2008
San Jose, California, United States
Front Matter: Volume 6922
Proc. SPIE 6922, Front Matter: Volume 6922, 692201 (22 April 2008); doi: 10.1117/12.798984
Invited Session
Proc. SPIE 6922, Diffraction order control in overlay metrology: a review of the roadmap options, 692202 (14 March 2008); doi: 10.1117/12.773243
Proc. SPIE 6922, Overlay metrology at the crossroads, 692203 (22 March 2008); doi: 10.1117/12.782035
Solutions for Today
Proc. SPIE 6922, Production aspects of 45nm immersion lithography defect monitoring using laser DUV inspection methodology, 692204 (3 April 2008); doi: 10.1117/12.777371
Proc. SPIE 6922, Immersion lithography bevel solutions, 692206 (16 April 2008); doi: 10.1117/12.797082
Proc. SPIE 6922, Versatile DUV scatterometer of the PTB and FEM based analysis for mask metrology, 692207 (22 March 2008); doi: 10.1117/12.772619
Proc. SPIE 6922, Toward accurate feature shape metrology, 692208 (22 March 2008); doi: 10.1117/12.774426
Proc. SPIE 6922, Extracting dose and focus from critical dimension data: optimizing the inverse solution, 692209 (22 March 2008); doi: 10.1117/12.775441
Proc. SPIE 6922, Challenges of implementing contour modeling in 32nm technology, 69220A (22 March 2008); doi: 10.1117/12.775444
Methods for Tomorrow
Proc. SPIE 6922, The potentials of helium ion microscopy for semiconductor process metrology, 69220B (22 March 2008); doi: 10.1117/12.768107
Proc. SPIE 6922, Evaluating diffraction based overlay metrology for double patterning technologies, 69220C (22 March 2008); doi: 10.1117/12.774736
Proc. SPIE 6922, Plasma cleaning of nanoparticles from EUV mask materials by electrostatics, 69220D (9 April 2008); doi: 10.1117/12.772363
Proc. SPIE 6922, Optical through-focus technique that differentiates small changes in line width, line height, and sidewall angle for CD, overlay, and defect metrology applications, 69220E (16 April 2008); doi: 10.1117/12.777205
Standards and Reference Metrology
Proc. SPIE 6922, Paving the way for multiple applications for the 3D-AFM technique in the semiconductor industry, 69220F (3 April 2008); doi: 10.1117/12.772675
Proc. SPIE 6922, Controlled deposition of NIST-traceable nanoparticles as additional size standards for photomask applications, 69220G (22 March 2008); doi: 10.1117/12.756741
Proc. SPIE 6922, Accurate and traceable dimensional metrology with a reference CD-SEM, 69220H (25 March 2008); doi: 10.1117/12.773806
Proc. SPIE 6922, Sub-nanometer pitch calibration and data quality evaluation methodology, 69220I (22 March 2008); doi: 10.1117/12.775410
Proc. SPIE 6922, A novel AFM method for sidewall measurement of high-aspect ratio patterns, 69220J (22 March 2008); doi: 10.1117/12.772712
Proc. SPIE 6922, TEM validation of CD AFM image reconstruction: part II, 69220K (22 March 2008); doi: 10.1117/12.773237
Proc. SPIE 6922, Dimension controlled CNT probe of AFM metrology tool for 45-nm node and beyond, 69220L (3 April 2008); doi: 10.1117/12.772433
Overlay I
Proc. SPIE 6922, Overlay metrology tool calibration using blossom, 69220M (22 March 2008); doi: 10.1117/12.773277
Proc. SPIE 6922, Using in-chip overlay metrology, 69220N (22 March 2008); doi: 10.1117/12.774507
Proc. SPIE 6922, Diffraction based overlay metrology: accuracy and performance on front end stack, 69220O (22 March 2008); doi: 10.1117/12.772516
Proc. SPIE 6922, Optimization of high order control including overlay, alignment, and sampling, 69220P (3 April 2008); doi: 10.1117/12.772274
Proc. SPIE 6922, Overlay measurement based on dual-overlay grating image, 69220Q (22 March 2008); doi: 10.1117/12.772388
Scatterometry I
Proc. SPIE 6922, Assessing scatterometry for measuring advanced spacer structures with embedded SiGe, 69220R (22 March 2008); doi: 10.1117/12.774823
Proc. SPIE 6922, Characterization of 32nm node BEOL grating structures using scatterometry, 69220S (22 March 2008); doi: 10.1117/12.773088
Proc. SPIE 6922, Advanced profile control and the impact of sidewall angle at gate etch for critical nodes, 69220T (22 March 2008); doi: 10.1117/12.774962
Proc. SPIE 6922, Scatterometry as technology enabler for embedded SiGe process, 69220U (22 March 2008); doi: 10.1117/12.774564
Proc. SPIE 6922, Measurement of high-k and metal film thickness on FinFET sidewalls using scatterometry, 69220V (24 March 2008); doi: 10.1117/12.773593
Proc. SPIE 6922, Industrial characterization of scatterometry for advanced APC of 65 nm CMOS logic gate patterning, 69220W (22 March 2008); doi: 10.1117/12.771614
Process Control
Proc. SPIE 6922, Impact of sampling on uncertainty: semiconductor dimensional metrology applications, 69220X (16 April 2008); doi: 10.1117/12.772993
Proc. SPIE 6922, CD uniformity control via real-time control of photoresist properties, 69220Y (3 April 2008); doi: 10.1117/12.771418
Proc. SPIE 6922, Improvement of gate CD uniformity for 55 nm node logic devices, 692210 (22 March 2008); doi: 10.1117/12.771548
Proc. SPIE 6922, Metrology characterization for self-aligned double patterning, 692211 (22 March 2008); doi: 10.1117/12.774408
Proc. SPIE 6922, Focus and dose control to actual process wafer, 692212 (22 March 2008); doi: 10.1117/12.768893
Inspection and Defect
Proc. SPIE 6922, Defect criticality index (DCI): a new methodology to significantly improve DOI sampling rate in a 45nm production environment, 692213 (16 April 2008); doi: 10.1117/12.771917
Proc. SPIE 6922, Lot acceptance sampling inspection plan for non-normal CD distribution, 692214 (22 March 2008); doi: 10.1117/12.771878
Proc. SPIE 6922, Improvements on the simulation of microscopic images for the defect detection of nanostructures, 692215 (16 April 2008); doi: 10.1117/12.772498
Proc. SPIE 6922, Defect inspection using a high-resolution pattern image obtained from multiple low-resolution images of the same pattern on an observed noisy SEM image, 692216 (24 March 2008); doi: 10.1117/12.772513
Proc. SPIE 6922, Contamination specification for dimensional metrology SEMs, 692217 (25 March 2008); doi: 10.1117/12.774015
Proc. SPIE 6922, In-line inspection resistance mapping using quantitative measurement of voltage contrast in SEM images, 692218 (24 March 2008); doi: 10.1117/12.769288
CDSEM I
Proc. SPIE 6922, Experiment and simulation of charging effects in SEM, 692219 (24 March 2008); doi: 10.1117/12.772255
Proc. SPIE 6922, Characterization of CD-SEM metrology for iArF photoresist materials, 69221A (24 March 2008); doi: 10.1117/12.774317
Proc. SPIE 6922, Advanced CD-SEM metrology to improve total process control performance for hyper-NA lithography, 69221B (16 April 2008); doi: 10.1117/12.771886
Proc. SPIE 6922, CD-SEM contour-based process monitoring in DRAM production environment, 69221C (24 March 2008); doi: 10.1117/12.774114
Overlay II
Proc. SPIE 6922, Accurate in-resolution level overlay metrology for multipatterning lithography techniques, 69221D (24 March 2008); doi: 10.1117/12.776099
Proc. SPIE 6922, Sources of overlay error in double patterning integration schemes, 69221E (24 March 2008); doi: 10.1117/12.773575
Proc. SPIE 6922, Correlating overlay metrology precision to interlayer dielectric film properties, 69221F (24 March 2008); doi: 10.1117/12.771723
Proc. SPIE 6922, Overlay improvement by zone alignment strategy, 69221G (24 March 2008); doi: 10.1117/12.772520
CD for Development and OPC
Proc. SPIE 6922, Challenges of OPC model calibration from SEM contours, 69221H (24 March 2008); doi: 10.1117/12.772060
Proc. SPIE 6922, Empirical data validation for model building, 69221I (24 March 2008); doi: 10.1117/12.773414
Proc. SPIE 6922, Automated creation of production metrology recipes based on design information, 69221J (24 March 2008); doi: 10.1117/12.773407
Proc. SPIE 6922, Impact of assistance feature to pattern profile for isolated feature in sub-65 nm node, 69221K (24 March 2008); doi: 10.1117/12.773109
Proc. SPIE 6922, Accurate device simulations through CD-SEM-based edge-contour extraction, 69221L (4 April 2008); doi: 10.1117/12.772648