Front Matter
Proc. SPIE 6923, Front Matter: Volume 6923, 692301 (17 April 2008); doi: 10.1117/12.798687
Keynote Session
Proc. SPIE 6923, Rise of chemical amplification resists from laboratory curiosity to paradigm enabling Moore's law, 692302 (15 April 2008); doi: 10.1117/12.782636
Materials and Processes for Immersion Lithography I
Proc. SPIE 6923, The limitations of high-index resists for 193-nm hyper-NA lithography, 692304 (26 March 2008); doi: 10.1117/12.773114
Proc. SPIE 6923, High-index resist for 193-nm immersion lithography, 692305 (26 March 2008); doi: 10.1117/12.772958
Proc. SPIE 6923, Development of an operational high refractive index resist for 193nm immersion lithography, 692306 (15 April 2008); doi: 10.1117/12.772871
Proc. SPIE 6923, Non-topcoat resist design for immersion process at 32-nm node, 692307 (31 March 2008); doi: 10.1117/12.775542
Materials and Processes for Immersion Lithography II
Proc. SPIE 6923, Self-segregating materials for immersion lithography, 692309 (4 April 2008); doi: 10.1117/12.772937
Proc. SPIE 6923, Development and evaluation of 193nm immersion generation-three fluid candidates, 69230A (15 April 2008); doi: 10.1117/12.772887
Proc. SPIE 6923, New high-index fluids: exploiting anomalous dispersion for immersion lithography, 69230B (26 March 2008); doi: 10.1117/12.772979
Proc. SPIE 6923, A new class of low bake resists for 193-nm immersion lithography, 69230C (15 April 2008); doi: 10.1117/12.772947
Proc. SPIE 6923, Process development for high scan speed ArF immersion lithography, 69230D (4 April 2008); doi: 10.1117/12.771795
Proc. SPIE 6923, Immersion resist process for 32-nm node logic devices, 69230E (31 March 2008); doi: 10.1117/12.771008
Materials and Processes for Double Patterning/Double Exposure
Proc. SPIE 6923, Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process, 69230F (26 March 2008); doi: 10.1117/12.771773
Proc. SPIE 6923, Resist freezing process for double exposure lithography, 69230G (26 March 2008); doi: 10.1117/12.772852
Proc. SPIE 6923, Sub-40-nm half-pitch double patterning with resist freezing process, 69230H (26 March 2008); doi: 10.1117/12.772403
Proc. SPIE 6923, Rigorous physical modeling of a materials-based frequency doubling lithography process, 69230I (4 April 2008); doi: 10.1117/12.772736
Molecular Resists
Proc. SPIE 6923, Novel molecular resist based on an amorphous truxene derivative, 69230J (26 March 2008); doi: 10.1117/12.770944
Proc. SPIE 6923, Single molecule chemically amplified resists based on ionic and non-ionic PAGs, 69230K (27 March 2008); doi: 10.1117/12.773570
Proc. SPIE 6923, Surface roughness of molecular resist for EUV lithography, 69230L (26 March 2008); doi: 10.1117/12.772349
Proc. SPIE 6923, Chemically amplified fullerene resists for e-beam lithography, 69230M (15 April 2008); doi: 10.1117/12.772645
Proc. SPIE 6923, Chemically amplified molecular resist based on fullerene derivative for nanolithography, 69230N (26 March 2008); doi: 10.1117/12.771835
Proc. SPIE 6923, New architectures for high resolution patterning, 69230O (26 March 2008); doi: 10.1117/12.772667
Simulation of Resist Processes
Proc. SPIE 6923, Base quencher effects in chemically amplified resist at sub-30-nm fabrication, 69230P (26 March 2008); doi: 10.1117/12.772154
Proc. SPIE 6923, Mesoscale simulation of molecular glass photoresists: effect of PAG loading and acid diffusion coefficient, 69230Q (26 March 2008); doi: 10.1117/12.774619
Proc. SPIE 6923, A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography, 69230R (26 March 2008); doi: 10.1117/12.772507
Proc. SPIE 6923, Monte Carlo simulation on line edge roughness after development in chemically amplified resist of post-optical lithography, 69230S (26 March 2008); doi: 10.1117/12.772174
Proc. SPIE 6923, Extraction and identification of resist modeling parameters for EUV lithography, 69230T (15 April 2008); doi: 10.1117/12.773122
ARCs and Multilayer Materials and Processes
Proc. SPIE 6923, Etching spin-on trilayer masks, 69230U (15 April 2008); doi: 10.1117/12.772691
Proc. SPIE 6923, Graded spin-on organic bottom antireflective coating for high NA lithography, 69230V (26 March 2008); doi: 10.1117/12.772268
Proc. SPIE 6923, A high-Si content middle layer for ArF trilayer patterning, 69230W (4 April 2008); doi: 10.1117/12.772854
Proc. SPIE 6923, Anti-reflective coating for multipatterning lithography, 69230X (26 March 2008); doi: 10.1117/12.772827
Proc. SPIE 6923, A modified bilayer resist approach for 45 nm flash lithography, 69230Y (26 March 2008); doi: 10.1117/12.772760
EUV Resists
Proc. SPIE 6923, A high-throughput contact-hole resolution metric for photoresists: full-process sensitivity study, 69230Z (26 March 2008); doi: 10.1117/12.768551
Proc. SPIE 6923, Resist development to improve flare issue of EUV lithography, 692310 (26 March 2008); doi: 10.1117/12.771120
Proc. SPIE 6923, Synthesis and properties of new anionic photoacid generators bound polymer resists for e-beam and EUV lithography, 692312 (26 March 2008); doi: 10.1117/12.769004
Proc. SPIE 6923, EUV resist development in Selete, 692313 (4 April 2008); doi: 10.1117/12.771858
Proc. SPIE 6923, Photoresist induced contrast loss and its impact on EUV imaging extendibility, 692314 (15 April 2008); doi: 10.1117/12.772809
Resist Fundamentals
Proc. SPIE 6923, Finite element modeling of PAG leaching and water uptake in immersion lithography resist materials, 692315 (26 March 2008); doi: 10.1117/12.772850
Proc. SPIE 6923, A new technique for studying photo-acid generator chemistry and physics in polymer films using on-wafer ellipsometry and acid-sensitive dyes, 692316 (26 March 2008); doi: 10.1117/12.773393
Proc. SPIE 6923, A comparison of the reaction-diffusion kinetics between model-EUV polymer and molecular-glass photoresists, 692317 (15 April 2008); doi: 10.1117/12.773018
Proc. SPIE 6923, Lactones in 193 nm resists: What do they do?, 692318 (15 April 2008); doi: 10.1117/12.772919
Proc. SPIE 6923, Polymer matrix effects on acid generation, 692319 (26 March 2008); doi: 10.1117/12.771692
Proc. SPIE 6923, Acid-base equilibrium in chemically amplified resist, 69231A (26 March 2008); doi: 10.1117/12.772165
Resist Materials and Processes
Proc. SPIE 6923, Ionic photo-acid generators containing functionalized semifluorinated sulfonates for high-resolution lithography, 69231B (26 March 2008); doi: 10.1117/12.772880
Proc. SPIE 6923, Non-chemically amplified resists for 193 nm lithography, 69231C (26 March 2008); doi: 10.1117/12.772646
Proc. SPIE 6923, Post-lithography characterization of ArF resists for 45 nm node implant layers and beyond, 69231D (26 March 2008); doi: 10.1117/12.769466
Proc. SPIE 6923, LWR reduction in low-k1 ArF-immersion lithography, 69231E (15 April 2008); doi: 10.1117/12.771922
Proc. SPIE 6923, All-dry photoresist systems: physical vapor deposition of molecular glasses, 69231F (26 March 2008); doi: 10.1117/12.771101
Posters: Molecular Resists
Proc. SPIE 6923, Water-developable negative-tone single-molecule resists: high-sensitivity nonchemically amplified resists, 69231I (26 March 2008); doi: 10.1117/12.773188
Proc. SPIE 6923, Adamantane-based molecular glass resist for 193-nm lithography and beyond, 69231J (4 April 2008); doi: 10.1117/12.772249
Proc. SPIE 6923, Molecular glass photoresists based on acidolysis of acetal compounds, 69231K (26 March 2008); doi: 10.1117/12.774605
Proc. SPIE 6923, Molecular glass resists for next generation lithography, 69231L (15 April 2008); doi: 10.1117/12.772644
Proc. SPIE 6923, The effect of EUV molecular glass architecture on the bulk dispersion of a photo-acid generator, 69231M (15 April 2008); doi: 10.1117/12.773048
Proc. SPIE 6923, Molecular resists for EUV and EB lithography, 69231N (26 March 2008); doi: 10.1117/12.771880
Posters: Materials and Processes for Immersion Lithography
Proc. SPIE 6923, Options for high index fluids for third generation 193i lithography, 69231O (15 April 2008); doi: 10.1117/12.772994
Proc. SPIE 6923, High refractive-index resists composed of anionic photoacid generator (PAG) bound polymers for 193 nm immersion lithography, 69231P (26 March 2008); doi: 10.1117/12.770458