PROCEEDINGS VOLUME 7025
MICRO- AND NANOELECTRONICS 2007 | 1-5 OCTOBER 2007
Micro- and Nanoelectronics 2007
MICRO- AND NANOELECTRONICS 2007
1-5 October 2007
Zvenigorod, Russian Federation
Front Matter
Proc. SPIE 7025, Front Matter: Volume 7025, 702501 (30 April 2008); doi: 10.1117/12.803179
Lithography and Nanolithography
Proc. SPIE 7025, Multilayer Zr/Si filters for EUV lithography and for radiation source metrology, 702502 (29 April 2008); doi: 10.1117/12.802347
Proc. SPIE 7025, Correction of the EUV mirror substrate shape by ion beam, 702503 (29 April 2008); doi: 10.1117/12.802349
Proc. SPIE 7025, Investigation of fluorescence on wavelength 13.5 nm of x-ray tube for nanolithographer, 702504 (29 April 2008); doi: 10.1117/12.802350
Proc. SPIE 7025, Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities, 702505 (29 April 2008); doi: 10.1117/12.802351
Proc. SPIE 7025, A new source of a reference spherical wave for a point diffraction interferometer, 702506 (29 April 2008); doi: 10.1117/12.802353
Proc. SPIE 7025, A plane wave diffraction on a pin-hole in a film with a finite thickness and real electrodynamic properties, 702507 (29 April 2008); doi: 10.1117/12.802354
Proc. SPIE 7025, Mask image formation by electron beam deposition from vapor phase, 702508 (29 April 2008); doi: 10.1117/12.802355
Plasma and Beam Processing
Proc. SPIE 7025, Focused ion beam source of a new type for micro- and nanoelectronics technologies, 702509 (29 April 2008); doi: 10.1117/12.802356
Proc. SPIE 7025, Measurement of atomic hydrogen flow density during GaAs surface cleaning, 70250A (29 April 2008); doi: 10.1117/12.802357
Proc. SPIE 7025, Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source, 70250B (29 April 2008); doi: 10.1117/12.802358
Proc. SPIE 7025, Theoretical study of ionization processes in BF3 plasma, 70250C (29 April 2008); doi: 10.1117/12.802359
Proc. SPIE 7025, Reactive sputtering of metal targets: influence of reactive atoms implantation, 70250D (29 April 2008); doi: 10.1117/12.802360
Proc. SPIE 7025, Effect of quartz window temperature on plasma composition during STI etch, 70250E (29 April 2008); doi: 10.1117/12.802361
Proc. SPIE 7025, Langmuir probe applications in monitoring of plasma etching, 70250F (29 April 2008); doi: 10.1117/12.802362
Proc. SPIE 7025, An end point detection method based on induced current and an automatic control device for an ion etching system, 70250G (29 April 2008); doi: 10.1117/12.802363
Proc. SPIE 7025, The method of thin metal films adhesion increasing for the lowered dimensions structures, 70250H (29 April 2008); doi: 10.1117/12.802364
Materials and Devices for Optoelectronics
Proc. SPIE 7025, Surprising phase transformation of a-Si:H films under femtosecond laser impact, 70250I (29 April 2008); doi: 10.1117/12.802366
Proc. SPIE 7025, Micro-scale domain structure formation by e-beam point writing on the Y cut surfaces of LiTaO3 crystals, 70250J (29 April 2008); doi: 10.1117/12.802409
Proc. SPIE 7025, Intersubband optical transitions in InAs/GaSb broken-gap quantum wells, 70250K (29 April 2008); doi: 10.1117/12.802410
Proc. SPIE 7025, Silicon avalanche photodiodes for particle detection, 70250L (29 April 2008); doi: 10.1117/12.802411
Nanosctructures and Nanodevices
Proc. SPIE 7025, Graphene nanoelectronics: electrostatics and kinetics, 70250M (29 April 2008); doi: 10.1117/12.802412
Proc. SPIE 7025, The method for the determination of electrical self-capacitance of the atomic and molecular scale objects, 70250N (29 April 2008); doi: 10.1117/12.802413
Proc. SPIE 7025, Effects of spatial reproduction at the interference of the electron waves in semiconductor 1D nanostructures with parabolic quantum wells, 70250O (29 April 2008); doi: 10.1117/12.802414
Proc. SPIE 7025, Method of creation of monomolecular transistor with overhanging electrodes, 70250P (29 April 2008); doi: 10.1117/12.802415
Proc. SPIE 7025, Creation of nanometer gaps between thin-film metal electrodes by the method of electromigration, 70250Q (29 April 2008); doi: 10.1117/12.802416
Proc. SPIE 7025, Pulsed laser deposition of layers and nanostructures based on cadmium telluride and bismuth, 70250R (29 April 2008); doi: 10.1117/12.802417
Magnetic Micro- and Nanostructures
Proc. SPIE 7025, Non-equilibrium magnetism of nanoparticles revealed in static and radiofrequency measurements, 70250S (29 April 2008); doi: 10.1117/12.802418
Proc. SPIE 7025, Finite size effects in antiferromagnetic multilayers, 70250T (29 April 2008); doi: 10.1117/12.802419
Proc. SPIE 7025, Epitaxial Fe films and structures, 70250U (29 April 2008); doi: 10.1117/12.802420
Proc. SPIE 7025, Investigation of re-switching properties of ferromagnetic contacts in Py/Mo microstructures, 70250V (29 April 2008); doi: 10.1117/12.802421
Thin Films Technologies
Proc. SPIE 7025, Molecular-beam epitaxy of ultrathin Si films on sapphire, 70250W (29 April 2008); doi: 10.1117/12.802423
Proc. SPIE 7025, Formation of TiN/CoSi2 bilayer from Co/Ti/Si structure in a non-isothermal reactor, 70250X (29 April 2008); doi: 10.1117/12.802424
Proc. SPIE 7025, Formation of thin ZrO2 layers for nanotransistor gate structures by electron beam evaporation, 70250Y (29 April 2008); doi: 10.1117/12.802425
Proc. SPIE 7025, Films with regulated optical and electrophysical parameters, 70250Z (29 April 2008); doi: 10.1117/12.802426
Micro- and Nanostructures Characterization
Proc. SPIE 7025, Direct measurement of the linewidth of relief element on AFM in nanometer range, 702510 (29 April 2008); doi: 10.1117/12.802427
Proc. SPIE 7025, Nanorelief elements in reference measures for scanning electron microscopy, 702511 (29 April 2008); doi: 10.1117/12.802428
Proc. SPIE 7025, Capabilities of microinterferometer with digital recording of images for studying micro-objects with sub-nanometer resolution, 702512 (29 April 2008); doi: 10.1117/12.802458
Proc. SPIE 7025, Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiNx dielectrics, 702513 (29 April 2008); doi: 10.1117/12.802459
Proc. SPIE 7025, AlxGa(1-x)N/GaN structure diagnostic by C-V characteristics method, 702514 (29 April 2008); doi: 10.1117/12.802461
Proc. SPIE 7025, The new approach in the determination of the dependency of surface charge density on semiconductor surface potential based voltage: capacity analysis of the depletion region of MIS-structures, 702515 (29 April 2008); doi: 10.1117/12.802478
Device Structures and ICs
Proc. SPIE 7025, Parasitic bipolar effect in modern SOI CMOS technologies, 702516 (29 April 2008); doi: 10.1117/12.802479
Proc. SPIE 7025, Radiation induced leakage due to stochastic charge trapping in isolation layers of nanoscale MOSFETs, 702517 (29 April 2008); doi: 10.1117/12.802480
Proc. SPIE 7025, The spatial features AlxGa 1-xN/GaN heterostructure, 702518 (29 April 2008); doi: 10.1117/12.802481
Proc. SPIE 7025, Features of evolution of implanted profiles during RTA in non-isothermal reactor, 702519 (29 April 2008); doi: 10.1117/12.802484
Proc. SPIE 7025, Stable silicon resistors at 20-160 degrees C due to divacancy involving high purity neutron doped Si, 70251A (29 April 2008); doi: 10.1117/12.802485
Proc. SPIE 7025, Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor, 70251B (29 April 2008); doi: 10.1117/12.802486
Proc. SPIE 7025, Research of the disbalance mechanism of dual collector lateral bipolar magnetotransistor, 70251C (29 April 2008); doi: 10.1117/12.802487
Proc. SPIE 7025, Non-volatile electrically reprogrammable memory matrix on self-forming conducting nanostructures with an integrated transistor electric decoupling of cells, 70251D (29 April 2008); doi: 10.1117/12.802488
MEMS and NEMS
Proc. SPIE 7025, High energy microelectromechanical oscillator based on the electrostatic microactuator, 70251E (29 April 2008); doi: 10.1117/12.802490
Proc. SPIE 7025, Divergence instability of an extensible microplate subjected to nonlinear electrostatic pressure, 70251F (29 April 2008); doi: 10.1117/12.802494
Proc. SPIE 7025, Electromechanical energy conversion in the nanometer gaps, 70251G (29 April 2008); doi: 10.1117/12.802501
Proc. SPIE 7025, Simulation, fabrication, and dynamics characteristics of electrostatically actuated switches, 70251H (29 April 2008); doi: 10.1117/12.802502
Simulation and Modeling
Proc. SPIE 7025, Comparative analysis of pseudo-potential and tight-binding band structure calculations with an analytical two-band k-p model: conduction band of silicon, 70251I (29 April 2008); doi: 10.1117/12.802503
Proc. SPIE 7025, Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths, 70251J (29 April 2008); doi: 10.1117/12.802504
Proc. SPIE 7025, All-quantum simulation of an ultra-small SOI MOSFET, 70251K (29 April 2008); doi: 10.1117/12.802532
Proc. SPIE 7025, Monte Carlo study of influence of channel length and depth on electron transport in SOI MOSFETs, 70251L (29 April 2008); doi: 10.1117/12.802533
Proc. SPIE 7025, Temperature effect on electron transport in conventional short channel MOSFETs: Monte Carlo simulation, 70251M (29 April 2008); doi: 10.1117/12.802534