Front Matter
Proc. SPIE 7028, Front Matter: Volume 7028, 702801 (27 May 2008); doi: 10.1117/12.801299
Material for Photomask
Proc. SPIE 7028, Logic device scaling trend in ITRS 2007, 702802 (19 May 2008); doi: 10.1117/12.796009
Proc. SPIE 7028, MoSi absorber photomask for 32nm node, 702803 (19 May 2008); doi: 10.1117/12.796010
Proc. SPIE 7028, The ultimate chrome absorber in photomask making, 702804 (19 May 2008); doi: 10.1117/12.793013
Photomask Process Technology
Proc. SPIE 7028, Phase shift mask etch process development utilizing a scatterometry-based metrology tool, 702807 (19 May 2008); doi: 10.1117/12.793016
Proc. SPIE 7028, Advanced damage-free photomask cleaning for 45/32nm technology nodes, 702808 (19 May 2008); doi: 10.1117/12.793017
Proc. SPIE 7028, Application of two-fluid nozzles for advanced photomask cleaning process, 702809 (19 May 2008); doi: 10.1117/12.793018
Writing Technology
Proc. SPIE 7028, Linewidth roughness characterization in step and flash imprint lithography, 70280A (19 May 2008); doi: 10.1117/12.796015
Proc. SPIE 7028, Multi column cell (MCC) e-beam exposure system for mask writing, 70280B (19 May 2008); doi: 10.1117/12.793019
Proc. SPIE 7028, Modeling of charging effect and its correction by EB mask writer EBM-6000, 70280C (19 May 2008); doi: 10.1117/12.793020
Proc. SPIE 7028, Mask image position correction for double patterning lithography, 70280D (19 May 2008); doi: 10.1117/12.793021
Proc. SPIE 7028, Distributed processing (DP) based e-beam lithography simulation with long range correction algorithm in e-beam machine, 70280E (19 May 2008); doi: 10.1117/12.793022
MDP
Proc. SPIE 7028, Case study: the impact of VSB fracturing, 70280F (19 May 2008); doi: 10.1117/12.793023
Proc. SPIE 7028, Model based short range mask process correction, 70280G (19 May 2008); doi: 10.1117/12.793024
NGL I
Proc. SPIE 7028, Selete EUV reticle shipping and storage test results, 70280I (19 May 2008); doi: 10.1117/12.793025
Proc. SPIE 7028, Damage analysis of EUV mask under Ga focused ion beam irradiation, 70280J (19 May 2008); doi: 10.1117/12.793026
EDA and DFM for Photomask I
Proc. SPIE 7028, Hybrid resist model to enhance continuous process window model for OPC, 70280L (19 May 2008); doi: 10.1117/12.793028
Proc. SPIE 7028, Predictive modeling of lithography-induced linewidth variation, 70280M (19 May 2008); doi: 10.1117/12.793029
Proc. SPIE 7028, OPC model enhancement using parameter sensitivity methodology, 70280N (19 May 2008); doi: 10.1117/12.793030
Proc. SPIE 7028, Yield-centric layout optimization with precise quantification of lithographic yield loss, 70280O (19 May 2008); doi: 10.1117/12.793031
NGL II
Proc. SPIE 7028, Metrology of EUV masks by EUV-scatterometry and finite element analysis, 70280P (19 May 2008); doi: 10.1117/12.793032
Proc. SPIE 7028, 32 nm imprint masks using variable shape beam pattern generators, 70280R (19 May 2008); doi: 10.1117/12.793034
EDA and DFM for Photomask II
Proc. SPIE 7028, Describing litho-constrained layout by a high-resolution model filter, 70280S (19 May 2008); doi: 10.1117/12.793035
Proc. SPIE 7028, Source optimization and mask design to minimize MEEF in low k1 lithography, 70280T (19 May 2008); doi: 10.1117/12.793036
OPC and Lithography Technologies I
Proc. SPIE 7028, Optimization of MDP, mask writing, and mask inspection for mask manufacturing cost reduction, 70280V (19 May 2008); doi: 10.1117/12.796014
Proc. SPIE 7028, Scanner fleet management utilizing programmed hotspot patterns, 70280W (19 May 2008); doi: 10.1117/12.793038
Proc. SPIE 7028, Separable OPC models for computational lithography, 70280X (19 May 2008); doi: 10.1117/12.793039
Proc. SPIE 7028, AF fixer: new incremental OPC method for optimizing assist feature, 70280Y (19 May 2008); doi: 10.1117/12.793040
Proc. SPIE 7028, Extension of the 2D-TCC technique to optimize mask pattern layouts, 70280Z (19 May 2008); doi: 10.1117/12.793041
OPC and Lithography Technologies II
Proc. SPIE 7028, The lithography technology for the 32 nm HP and beyond, 702810 (19 May 2008); doi: 10.1117/12.796016
Proc. SPIE 7028, Model-based SRAF insertion through pixel-based mask optimization at 32nm and beyond, 702811 (19 May 2008); doi: 10.1117/12.798440
Proc. SPIE 7028, A study of mask specification in spacer patterning technology, 702812 (19 May 2008); doi: 10.1117/12.800464
Proc. SPIE 7028, Rigorous vectorial modeling for polarized illumination and projection pupil in OPC, 702813 (19 May 2008); doi: 10.1117/12.793044
Proc. SPIE 7028, Impact of patterning strategy on mask fabrication beyond 32nm, 702814 (19 May 2008); doi: 10.1117/12.793045
Proc. SPIE 7028, Mask transmission resonance in bi-layer masks, 702815 (19 May 2008); doi: 10.1117/12.793046
Progressive Defect (Haze)
Proc. SPIE 7028, ACLV degradation: root cause analysis and effective monitoring strategy, 702816 (19 May 2008); doi: 10.1117/12.793047
Proc. SPIE 7028, Printability impact of progressive defects: ammonium sulfate emulation study, 702817 (19 May 2008); doi: 10.1117/12.793048
Proc. SPIE 7028, Prevention of chemical residue from growing into Haze defect on PSM pattern edge after normal cleaning process, 702818 (19 May 2008); doi: 10.1117/12.793049
Repairing Technology
Proc. SPIE 7028, Nanomachining processes for 45, 32 nm node mask repair and beyond, 70281A (19 May 2008); doi: 10.1117/12.793052
Proc. SPIE 7028, Mask CD control (CDC) using AIMS as the CD metrology data source, 70281C (19 May 2008); doi: 10.1117/12.793054
Inspection Technology
Proc. SPIE 7028, "What you see is what you print": aerial imaging as an optimal discriminator between printing and non-printing photomask defects, 70281E (19 May 2008); doi: 10.1117/12.793055
Proc. SPIE 7028, A novel approach: high resolution inspection with wafer plane defect detection, 70281F (19 May 2008); doi: 10.1117/12.793056
Proc. SPIE 7028, Practical application of aerial imaging mask inspection for memory devices, 70281G (19 May 2008); doi: 10.1117/12.793057
Proc. SPIE 7028, Wafer plane inspection for advanced reticle defects, 70281H (19 May 2008); doi: 10.1117/12.793058
Proc. SPIE 7028, Resist pattern inspection function for LM7500 reticle inspection system, 70281I (19 May 2008); doi: 10.1117/12.793059
Proc. SPIE 7028, Fast integrated die-to-die transmitted, reflected and STARlight-2 defect inspection on memory masks, 70281J (19 May 2008); doi: 10.1117/12.793060
Metrology for Photomask
Proc. SPIE 7028, IntenCD: an application for CD uniformity mapping of photomask and process control at maskshops, 70281K (19 May 2008); doi: 10.1117/12.793061
Proc. SPIE 7028, Controlling phase induced CD non-uniformity effects of PSM photo-masks, 70281L (19 May 2008); doi: 10.1117/12.793062
Proc. SPIE 7028, Mask CD compensation method using diffraction intensity for lithography equivalent metrology, 70281M (19 May 2008); doi: 10.1117/12.793063
Proc. SPIE 7028, Reliable measurement method for complicated OPC pattern, 70281N (19 May 2008); doi: 10.1117/12.793064
Proc. SPIE 7028, The study to optimize CD uniformity by reliable area CD measurement on 45nm D/R DRAM, 70281O (19 May 2008); doi: 10.1117/12.793065
Cost and Strategy on Photomask
Proc. SPIE 7028, Mask and wafer cost of ownership (COO) from 65 to 22 nm half-pitch nodes, 70281P (19 May 2008); doi: 10.1117/12.793067
Poster Session 5a: NGL
Proc. SPIE 7028, EUV mask process development status for full field EUV exposure tool, 70281Q (19 May 2008); doi: 10.1117/12.793068