Eighth International Conference on Solid State Lighting
Proceedings Volume 7058 is from: Logo
10-14 August 2008
San Diego, California, United States
Front Matter
Proc. SPIE 7058, Front Matter: Volume 7058, 705801 (25 September 2008);
Solid State Lighting and OLEDs Plenary Session
Proc. SPIE 7058, Why the developing world is the perfect market place for solid state lighting, 705802 (2 September 2008);
Source Performance I
Proc. SPIE 7058, On-chip very low junction temperature GaN-based light emitting diodes by selective ion implantation, 705805 (2 September 2008);
Proc. SPIE 7058, Design and fabrication of optical homogenizer with micro structure by injection molding process, 705807 (26 August 2008);
Proc. SPIE 7058, Rapid prototyping of an adaptive light source for mobile manipulators with EasyKit and EasyLab, 70580A (2 September 2008);
OLEDs and Solid State Lighting: Joint Session with Conference 7051
Proc. SPIE 7058, Improvement of efficiency droop in resonance tunneling LEDs, 70580D (2 September 2008);
Source Performance II
Proc. SPIE 7058, Lumiramic: a new phosphor technology for high performance solid state light sources, 70580E (2 September 2008);
Proc. SPIE 7058, Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar, 70580G (2 September 2008);
Proc. SPIE 7058, Thermal characterization of single-die and multi-die high power light-emitting diodes, 70580H (2 September 2008);
Proc. SPIE 7058, Effect of PdZn film on the performance of green light-emitting diodes, 70580I (2 September 2008);
Proc. SPIE 7058, Metalorganic chemical vapor deposition of GaN and InGaN on ZnO substrate using Al2O3 as a transition layer, 70580K (2 September 2008);
Proc. SPIE 7058, Layered oxonitrido silicate (SiON) phosphors for high power LEDs, 70580L (12 September 2008);
Proc. SPIE 7058, Remote phosphor LED modules for general illumination: toward 200 lm/W general lighting LED light sources, 70580M (12 September 2008);
Proc. SPIE 7058, Phosphor-free white light-emitting diode using InGaN/GaN multiple quantum wells grown on microfacets, 70580N (2 September 2008);
Proc. SPIE 7058, External efficiency and thermal reliability enhanced multi-chip package design for light emitting diodes, 70580Q (2 September 2008);
Proc. SPIE 7058, LED array: Where does far-field begin?, 70580R (2 September 2008);
Proc. SPIE 7058, Optical and structural properties of dual wavelength InGaN/GaN multiple quantum well light emitting diodes, 70580S (2 September 2008);
Proc. SPIE 7058, Formation of visible single-mode light sources using quantum dots, 70580U (2 September 2008);
Proc. SPIE 7058, MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications, 70580V (3 September 2008);
Proc. SPIE 7058, Improvement of leakage current and optical properties of GaN-based LEDs by chemical etching of p-GaN, 70580W (2 September 2008);
Proc. SPIE 7058, Efficient and cost-effective polarized-light backlights for LCDs, 70580X (2 September 2008);
Proc. SPIE 7058, Highly efficient (infra)-red-conversion of InGaN light emitting diodes by nanocrystals, enhanced by color selective mirrors, 70580Y (2 September 2008);
Proc. SPIE 7058, An integrated LED reflector for backlight system, 705810 (2 September 2008);
Proc. SPIE 7058, Creating a desired lighting pattern with an LED array, 705811 (2 September 2008);
Source Performance III
Proc. SPIE 7058, Polarization engineering of III-nitride nanostructures for high-efficiency light emitting diodes, 705812 (2 September 2008);
Poster Session
Proc. SPIE 7058, Improved performance of hybrid polymer light-emitting device by using inorganic nanocomposite and polymer solutions, 705816 (2 September 2008);
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