Proceedings Volume 7122 is from: Logo
SPIE PHOTOMASK TECHNOLOGY
6-10 October 2008
Monterey, California, United States
Front Matter
Proc. SPIE 7122, Front Matter: Volume 7122, 712201 (25 November 2008); doi: 10.1117/12.817633
Plenary Paper from Advanced Lithography 2008
Proc. SPIE 7122, Lithography and design in partnership: a new roadmap, 712202 (17 October 2008); doi: 10.1117/12.813418
Invited Session
Proc. SPIE 7122, Mask industry assessment: 2008, 712204 (17 October 2008); doi: 10.1117/12.802143
Proc. SPIE 7122, PMJ panel discussion overview on mask complexities, cost, and cycle time in 32-nm system LSI generation: conflict or concurrent?, 712207 (17 October 2008); doi: 10.1117/12.803743
Mask Materials for Optical Extensions
Proc. SPIE 7122, Characterization of binary and attenuated phase shift mask blanks for 32nm mask fabrication, 712209 (17 October 2008); doi: 10.1117/12.801950
Proc. SPIE 7122, Impact of the OMOG substrate on 32 nm mask OPC inspectability, defect sensitivity, and mask design rule restrictions, 71220A (17 October 2008); doi: 10.1117/12.801951
Proc. SPIE 7122, Evaluation of 32nm advanced immersion lithography pellicles, 71220B (17 October 2008); doi: 10.1117/12.801663
Advanced Mask Processing
Proc. SPIE 7122, Road to a zero degree total temperature range post exposure bake process, 71220C (17 October 2008); doi: 10.1117/12.801369
Proc. SPIE 7122, Study of second-generation Proximity Gap Suction Development System (PGSD-II) for mask fabrication, 71220D (17 October 2008); doi: 10.1117/12.801424
Proc. SPIE 7122, Process control of chrome dry etching by complete characterization of the RF power delivery, 71220E (17 October 2008); doi: 10.1117/12.801080
Proc. SPIE 7122, Integrating Cr and MoSi etch for optimal photomask critical dimension uniformity and phase uniformity, 71220F (17 October 2008); doi: 10.1117/12.801570
Proc. SPIE 7122, Electric field-induced progressive CD degradation in reticles, 71220G (17 October 2008); doi: 10.1117/12.801403
Proc. SPIE 7122, Don't kill canaries! Introducing a new test device to assess the electrostatic risk potential to photomasks, 71220H (17 October 2008); doi: 10.1117/12.801407
Patterning Technologies and Tools
Proc. SPIE 7122, Damage mechanisms and process optimization for photomasks with sub-resolution assist features, 71220I (17 October 2008); doi: 10.1117/12.801568
Proc. SPIE 7122, New electron optics for mask writer EBM-7000 to challenge hp 32nm generation, 71220J (17 October 2008); doi: 10.1117/12.801725
Proc. SPIE 7122, E-beam exposure system using multi column cell (MCC) with CP for mask writing, 71220K (17 October 2008); doi: 10.1117/12.801564
Proc. SPIE 7122, Results obtained with the CHARPAN Engineering Tool and prospects of the ion Mask Exposure Tool (iMET), 71220L (17 October 2008); doi: 10.1117/12.801441
Proc. SPIE 7122, Effects of heated substrates on bimetallic thermal resist for lithography and grayscale photomask applications, 71220M (17 October 2008); doi: 10.1117/12.801560
DPL Implementation I
Proc. SPIE 7122, Revisiting the layout decomposition problem for double patterning lithography, 71220N (17 October 2008); doi: 10.1117/12.801992
Proc. SPIE 7122, Evaluation of Double Process Lithography (DPL) with bi-layer photo-resist process for contact layer-patterning, 71220O (17 October 2008); doi: 10.1117/12.800988
Proc. SPIE 7122, Mask defect printability in the spacer patterning process, 71220P (17 October 2008); doi: 10.1117/12.801410
DPL Implementation II
Proc. SPIE 7122, Printability verification for double-patterning technology, 71220Q (17 October 2008); doi: 10.1117/12.801545
Proc. SPIE 7122, Double dipole RET investigation for 32 nm metal layers, 71220R (17 October 2008); doi: 10.1117/12.801789
Proc. SPIE 7122, Double-patterning decomposition, design compliance, and verification algorithms at 32nm hp, 71220S (17 October 2008); doi: 10.1117/12.801381
RET and OPC/ORC I
Proc. SPIE 7122, Pixel-based SRAF implementation for 32nm lithography process, 71220T (17 October 2008); doi: 10.1117/12.801310
Proc. SPIE 7122, Model-based assist feature placement: an inverse imaging approach, 71220U (17 October 2008); doi: 10.1117/12.801539
Proc. SPIE 7122, Optimizing models based OPC fragmentation using genetic algorithms, 71220V (17 October 2008); doi: 10.1117/12.801551
Proc. SPIE 7122, Single exposure is still alive: gate patterning at 45nm technology node, 71220W (17 October 2008); doi: 10.1117/12.801526
Proc. SPIE 7122, Advanced mask technique to improve bit line CD uniformity of 90 nm node flash memory in low-k1 lithography, 71220X (17 October 2008); doi: 10.1117/12.801557
Proc. SPIE 7122, OPC hotspot identification challenges: ORC vs. PWQ on wafer, 71220Y (17 October 2008); doi: 10.1117/12.801574
Proc. SPIE 7122, Challenges for the quality control of assist features for 45nm node technology and beyond, 71220Z (17 October 2008); doi: 10.1117/12.800916
Advanced Cleaning
Proc. SPIE 7122, Impact of MegaSonic process conditions on PRE and sub-resolution assist feature damage, 712210 (17 October 2008); doi: 10.1117/12.801408
Proc. SPIE 7122, Tunable droplet momentum and cavitation process for damage-free cleaning of challenging particles, 712211 (17 October 2008); doi: 10.1117/12.801549
Proc. SPIE 7122, Phase shift improvement in ArF/KrF haze-free mask cleaning, 712212 (17 October 2008); doi: 10.1117/12.801439
Haze Contamination Control
Proc. SPIE 7122, Crystal growth printability in an advanced foundry FAB: a correlation study between STARlight and ultra broadband BrightField inspection technologies, 712213 (17 October 2008); doi: 10.1117/12.801868
Proc. SPIE 7122, Report of latent contamination factors inducing lithographic variation, 712215 (17 October 2008); doi: 10.1117/12.801433
Proc. SPIE 7122, Detection of progressive transmission loss due to haze with Galileo mask DUV transmittance mapping based on non imaging optics, 712216 (17 October 2008); doi: 10.1117/12.801558
Proc. SPIE 7122, A new paradigm for haze improvement: retardation of haze occurrence by creating mask substrate insensitive to chemical contamination level, 712217 (20 October 2008); doi: 10.1117/12.801422
Proc. SPIE 7122, Simulation analysis of backside defects printability in 193nm photolithography, 712218 (17 October 2008); doi: 10.1117/12.801437
Wafer Plane Inspection
Proc. SPIE 7122, Optimal mask characterization by Surrogate Wafer Print (SWaP) method, 712219 (17 October 2008); doi: 10.1117/12.801685
Proc. SPIE 7122, High resolution inspection with wafer plane die: database defect detection, 71221A (17 October 2008); doi: 10.1117/12.801867
Proc. SPIE 7122, Wafer plane inspection evaluated for photomask production, 71221B (17 October 2008); doi: 10.1117/12.801945
Proc. SPIE 7122, Wafer plane inspection with soft resist thresholding, 71221C (17 October 2008); doi: 10.1117/12.801866
Proc. SPIE 7122, AIMS and resist simulation, 71221D (17 October 2008); doi: 10.1117/12.801226
Proc. SPIE 7122, AIMS-45 image validation of contact hole patterns after inverse lithography at NA 1.35, 71221E (17 October 2008); doi: 10.1117/12.801559
Inspection
Proc. SPIE 7122, Auto-classification and simulation of mask defects using SEM and CAD images, 71221F (17 October 2008); doi: 10.1117/12.801411
Proc. SPIE 7122, Novel mask inspection flow using Sensitivity Control Layers (SCL) on the TeraScanHR-587 platform, 71221G (17 October 2008); doi: 10.1117/12.801480
Proc. SPIE 7122, Evaluating practical vs. theoretical inspection system capability with a new programmed defect test mask designed for 3X and 4X technology nodes, 71221H (17 October 2008); doi: 10.1117/12.801546
Defect Repair
Proc. SPIE 7122, Nanomachining photomask repair of complex patterns, 71221I (17 October 2008); doi: 10.1117/12.801297
Proc. SPIE 7122, Practical laser mask repair in the contemporary production environment, 71221J (17 October 2008); doi: 10.1117/12.801301
Proc. SPIE 7122, Advanced process capabilities for electron beam based photomask repair in a production environment, 71221K (17 October 2008); doi: 10.1117/12.801554
RET and OPC/ORC II
Proc. SPIE 7122, 32nm 1-D regular pitch SRAM bitcell design for interference-assisted lithography, 71221L (17 October 2008); doi: 10.1117/12.801883
Proc. SPIE 7122, Convergence-based OPC method for dense simulations, 71221M (17 October 2008); doi: 10.1117/12.801431
Proc. SPIE 7122, Combination of rule and pattern based lithography unfriendly pattern detection in OPC flow, 71221N (17 October 2008); doi: 10.1117/12.801312
Proc. SPIE 7122, Automated OPC model collection, cleaning, and calibration flow, 71221O (17 October 2008); doi: 10.1117/12.801525
Simulation and Modeling I
Proc. SPIE 7122, Improvements in accuracy of dense OPC models, 71221Q (17 October 2008); doi: 10.1117/12.801695