Proceedings Volume 7140 is from: Logo
SPIE LITHOGRAPHY ASIA - TAIWAN
4-6 November 2008
Taipei, Taiwan
Front Matter
Proc. SPIE 7140, Front Matter: Volume 7140, 714001 (12 December 2008); doi: 10.1117/12.820873
EUVL Technology
Proc. SPIE 7140, EUVL contamination control studies for high-volume manufacturing, 714006 (4 December 2008); doi: 10.1117/12.804689
Proc. SPIE 7140, Full field EUV lithography: lessons learned on EUV ADT imaging, EUV resist, and EUV reticles, 714007 (4 December 2008); doi: 10.1117/12.805408
Proc. SPIE 7140, Current benchmarking results of EUV resist at Selete, 714008 (4 December 2008); doi: 10.1117/12.804665
Proc. SPIE 7140, Methodology of flare modeling and compensation in EUVL, 714009 (4 December 2008); doi: 10.1117/12.804673
Emergent Lithographic Technology
Proc. SPIE 7140, What is the strongest candidate in lithography for 2x nm HP and beyond? , 71400A (1 December 2008); doi: 10.1117/12.810264
Proc. SPIE 7140, Nano-imprint fabrication and light extraction simulation of photonic crystals on OLED, 71400C (4 December 2008); doi: 10.1117/12.806888
CD Metrology
Proc. SPIE 7140, The CD metrology perspectives and future trends, 71400F (4 December 2008); doi: 10.1117/12.805296
Proc. SPIE 7140, Optimizing integrated optical CD monitoring by floating pre-process variations in a complex multi-layer structure, 71400G (1 December 2008); doi: 10.1117/12.804636
Proc. SPIE 7140, Improving sidewall profile metrology with enhanced 3D-AFM, 71400H (1 December 2008); doi: 10.1117/12.804482
Proc. SPIE 7140, Accurate dimensional characterization of periodic structures by spectroscopic Mueller polarimetry, 71400I (1 December 2008); doi: 10.1117/12.804682
Proc. SPIE 7140, Characterization of inhomogeneous samples by spectroscopic Mueller polarimetry, 71400J (4 December 2008); doi: 10.1117/12.804690
Process Control and Metrology
Proc. SPIE 7140, An update on the DPL overlay discontinuity, 71400K (4 December 2008); doi: 10.1117/12.808005
Proc. SPIE 7140, Advance overlay correction beyond 32nm DRAM process, 71400M (4 December 2008); doi: 10.1117/12.804663
Proc. SPIE 7140, A comprehensive look at a new metrology technique to support the needs of lithography performance in near future, 71400N (1 December 2008); doi: 10.1117/12.807998
Lithography Process Control
Proc. SPIE 7140, Focus and dose control for high volume manufacturing, 71400Q (4 December 2008); doi: 10.1117/12.805314
Proc. SPIE 7140, Lithography hotspot discovery at 70nm DRAM 300mm fab: process window qualification using design base binning, 71400R (4 December 2008); doi: 10.1117/12.804563
Proc. SPIE 7140, Accelerating 32nm BEOL technology development by advanced wafer inspection methodology, 71400S (4 December 2008); doi: 10.1117/12.804526
Proc. SPIE 7140, Reducing capital and labor costs of 193nm lithography monitoring of airborne molecular contamination (AMC) through proactive assessment and implementation of AMC monitoring techniques and strategies, 71400U (4 December 2008); doi: 10.1117/12.803919
Defect Inspection
Proc. SPIE 7140, Advanced inspection methodologies for detection and classification of killer substrate defects, 71400W (4 December 2008); doi: 10.1117/12.804558
Proc. SPIE 7140, Electron beam charging of a SiO2 layer on Si: a comparison between Monte Carlo-simulated and experimental results, 71400X (4 December 2008); doi: 10.1117/12.804461
Proc. SPIE 7140, Advanced technology for after-develop inspection, 71400Y (1 December 2008); doi: 10.1117/12.804661
Optical (Imaging)
Proc. SPIE 7140, An innovative Source-Mask co-Optimization (SMO) method for extending low k1 imaging, 714010 (4 December 2008); doi: 10.1117/12.806657
Proc. SPIE 7140, A novel lithography design and verification methodology with patterning failure, 714011 (4 December 2008); doi: 10.1117/12.804638
Proc. SPIE 7140, A new calibration method for latent image fidelity, 714012 (4 December 2008); doi: 10.1117/12.804271
Proc. SPIE 7140, An imaging system for extended ArF immersion lithography, 714013 (4 December 2008); doi: 10.1117/12.804658
Proc. SPIE 7140, Model-based sub-resolution assist features using an inverse lithography method, 714014 (4 December 2008); doi: 10.1117/12.804678
Optical (Imaging) II
Proc. SPIE 7140, Immersion lithography: its history, current status and future prospects, 714015 (4 December 2008); doi: 10.1117/12.804709
Proc. SPIE 7140, Orientation Zernike Polynomials: a systematic description of polarized imaging using high NA lithography lenses, 714018 (4 December 2008); doi: 10.1117/12.805438
Proc. SPIE 7140, Resist-based polarization monitoring for 193nm high-numerical aperture lithography, 714019 (4 December 2008); doi: 10.1117/12.804610
Proc. SPIE 7140, Binary mask optimization for inverse lithography with partially coherent illumination, 71401A (4 December 2008); doi: 10.1117/12.803408
Proc. SPIE 7140, Extending KrF lithography beyond 80nm with the TWINSCAN XT:1000H 0.93NA scanner, 71401B (4 December 2008); doi: 10.1117/12.805381
EUV Scanner and Sources
Proc. SPIE 7140, Development of EUV lithography tools at Nikon, 71401C (4 December 2008); doi: 10.1117/12.804706
Proc. SPIE 7140, Status of DPP EUV sources development for Beta/HVM, 71401F (4 December 2008); doi: 10.1117/12.804687
Emergent Imaging Technology
Proc. SPIE 7140, A novel curve-fitting procedure for determining proximity effect parameters in electron beam lithography, 71401I (4 December 2008); doi: 10.1117/12.804693
Proc. SPIE 7140, Calculation of three-dimensional profiles of photoresist exposed by localized electric fields of high-transmission metal nano-apertures, 71401J (4 December 2008); doi: 10.1117/12.805399
Proc. SPIE 7140, Study on imaging characterization of ArF high index immersion lithography, 71401K (4 December 2008); doi: 10.1117/12.804651
EUV Infrastructure
Proc. SPIE 7140, Influences of various defects on extreme ultra-violet mask, 71401N (4 December 2008); doi: 10.1117/12.804570
Proc. SPIE 7140, Cost of ownership for future lithography technologies, 71401Q (4 December 2008); doi: 10.1117/12.804711
Litho Mask Technology
Proc. SPIE 7140, Removal of particles from lithographic masks through plasma-assisted cleaning by metastable atomic neutralization, 71401S (4 December 2008); doi: 10.1117/12.804704
Proc. SPIE 7140, Application of multi-tone mask technology in photolithographic fabrication of color filter components in LCD, 71401T (4 December 2008); doi: 10.1117/12.804628
Proc. SPIE 7140, Effective solution to reticle haze formation at 193nm lithography, 71401V (4 December 2008); doi: 10.1117/12.804629
Proc. SPIE 7140, Robust mask design with defocus variation using inverse synthesis, 71401W (4 December 2008); doi: 10.1117/12.804681
Optical (DPT)
Proc. SPIE 7140, A methodology for double patterning compliant split and design, 71401X (4 December 2008); doi: 10.1117/12.804697
Proc. SPIE 7140, Full-chip pitch/pattern splitting for lithography and spacer double patterning technologies, 71401Z (4 December 2008); doi: 10.1117/12.804763
Proc. SPIE 7140, Alternative technology for double patterning process simplification, 714020 (4 December 2008); doi: 10.1117/12.804657
Proc. SPIE 7140, Challenges of 29nm half-pitch NAND Flash STI patterning with 193nm dry lithography and self-aligned double patterning, 714021 (4 December 2008); doi: 10.1117/12.804685
Optical (DPT Process)
Proc. SPIE 7140, Mask specification guidelines in spacer patterning technology, 714022 (4 December 2008); doi: 10.1117/12.804744
Proc. SPIE 7140, Cluster optimization to improve CD control as an enabler for double patterning, 714023 (4 December 2008); doi: 10.1117/12.805239
Proc. SPIE 7140, CD uniformity improvement for 3x nm node devices, 714024 (4 December 2008); doi: 10.1117/12.804627
Proc. SPIE 7140, Using scatterometry to improve process control during the spacer pitch splitting process, 714025 (4 December 2008); doi: 10.1117/12.804578
Advanced Exposure Tool Control
Proc. SPIE 7140, Experimental proximity matching of ArF scanners, 714027 (4 December 2008); doi: 10.1117/12.804670
Proc. SPIE 7140, Exposure tool for 32-nm lithography: requirements and development progress, 714028 (4 December 2008); doi: 10.1117/12.804647
Proc. SPIE 7140, The impact of illuminator signatures on optical proximity effects, 71402A (4 December 2008); doi: 10.1117/12.804488