PROCEEDINGS VOLUME 7216
SPIE OPTO: INTEGRATED OPTOELECTRONIC DEVICES | 24-29 JANUARY 2009
Gallium Nitride Materials and Devices IV
IN THIS VOLUME

0 Sessions, 49 Papers, 0 Presentations
Front Matter  (1)
FETs  (5)
Growth I  (1)
Growth II  (1)
Growth III  (2)
Lasers  (5)
LEDs I  (4)
LEDs II  (4)
LEDs III  (4)
Proceedings Volume 7216 is from: Logo
SPIE OPTO: INTEGRATED OPTOELECTRONIC DEVICES
24-29 January 2009
San Jose, California, United States
Front Matter
Proc. SPIE 7216, Front Matter: Volume 7216, 721601 (11 March 2009); doi: 10.1117/12.824588
FETs
Proc. SPIE 7216, High-power AlGaN/GaN HFETs on Si substrates for power-switching applications, 721602 (16 February 2009); doi: 10.1117/12.807432
Proc. SPIE 7216, Predicting the performance of a power amplifier using large-signal circuit simulations of an AlGaN/GaN HFET model, 721603 (12 February 2009); doi: 10.1117/12.803348
Proc. SPIE 7216, Design of insulator/AlGaN structures in MIS AlGaN/GaN HFETs for higher device performance, 721605 (16 February 2009); doi: 10.1117/12.808816
Proc. SPIE 7216, Recent advances of high voltage AlGaN/GaN power HFETs, 721606 (17 February 2009); doi: 10.1117/12.808817
Proc. SPIE 7216, Hot phonons in InAlN/AlN/GaN heterostructure 2DEG channels, 721608 (19 February 2009); doi: 10.1117/12.802341
Growth I
Proc. SPIE 7216, Growth of high-quality large GaN crystal by Na flux LPE method, 72160B (19 February 2009); doi: 10.1117/12.807434
Growth II
Proc. SPIE 7216, Wurtzitic semiconductors heterostructures grown on (hk.l) oriented substrates: the interplay between spontaneous and piezoelectric polarization fields, elastic energy, and the modification of quantum confined Stark effect, 72160E (17 February 2009); doi: 10.1117/12.810040
Growth III
Proc. SPIE 7216, Growth of high quality AlN on sapphire by using a low-temperature AlN interlayer, 72160I (16 February 2009); doi: 10.1117/12.809139
Proc. SPIE 7216, Characteristics of narrow-bandgap InN semiconductors grown on Ga-polar and N-polar GaN templates by pulsed metalorganic vapor phase epitaxy, 72160L (19 February 2009); doi: 10.1117/12.808695
Nanotechniques/Devices I
Proc. SPIE 7216, Fabrication of position-controlled InN nanocolumns by ECR-MBE, 72160N (17 February 2009); doi: 10.1117/12.811764
Nanotechniques/Devices II
Proc. SPIE 7216, Piezoelectric quantum 1/f noise in AlGaN HFETs and reliability, 72160R (20 February 2009); doi: 10.1117/12.812243
Proc. SPIE 7216, Investigation of vertical current-voltage characteristics of Al(Ga)N/GaN RTD-like heterostructures, 72160S (16 February 2009); doi: 10.1117/12.809435
Advanced Techniques I
Proc. SPIE 7216, Terahertz emission and spectroscopy on InN epilayer and nanostructure, 72160T (16 February 2009); doi: 10.1117/12.805546
Proc. SPIE 7216, Surface control of GaN alloys for photonic and electronic devices, 72160U (19 February 2009); doi: 10.1117/12.807587
Proc. SPIE 7216, Current spreading and its related issues in GaN-based light emitting diodes, 72160V (16 February 2009); doi: 10.1117/12.808393
Advanced Techniques II
Proc. SPIE 7216, Surface charge lithography for GaN micro- and nanostructuring, 72160Y (19 February 2009); doi: 10.1117/12.803679
Advanced Methods
Proc. SPIE 7216, Investigation of the electrical activity of V-defects in GaN using scanning force microscopy, 721610 (16 February 2009); doi: 10.1117/12.808992
Proc. SPIE 7216, Improved hydrogen detection sensitivity of a Pt/Ga2O3/GaN diode, 721612 (19 February 2009); doi: 10.1117/12.811004
Proc. SPIE 7216, Effect of ambient on electrical and optical properties of GaN, 721614 (16 February 2009); doi: 10.1117/12.812258
Lasers
Proc. SPIE 7216, Nitride laser diode arrays, 721618 (16 February 2009); doi: 10.1117/12.802758
Proc. SPIE 7216, Room temperature polariton lasing in III-nitride microcavities: a comparison with blue GaN-based vertical cavity surface emitting lasers, 721619 (16 February 2009); doi: 10.1117/12.803718
Proc. SPIE 7216, Blue GaN-based vertical cavity surface emitting lasers by CW current injection at 77K, 72161A (16 February 2009); doi: 10.1117/12.808644
Proc. SPIE 7216, Growth and conductivity control of high quality AlGaN and its application to high-performance ultraviolet laser diodes, 72161B (17 February 2009); doi: 10.1117/12.808381
Proc. SPIE 7216, Temperature dependence of blue InGaN lasers, 72161C (19 February 2009); doi: 10.1117/12.807979
LEDs I
Proc. SPIE 7216, Improvement in light extraction efficiency of high brightness InGaN-based light emitting diodes, 72161T (23 February 2009); doi: 10.1117/12.808458
Proc. SPIE 7216, Emission of biased green quantum wells in time and wavelength domain, 72161U (16 February 2009); doi: 10.1117/12.803932
Proc. SPIE 7216, Reduction of efficiency droop in InGaN-based blue LEDs, 72161W (16 February 2009); doi: 10.1117/12.809877
Proc. SPIE 7216, Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes, 72161Y (16 February 2009); doi: 10.1117/12.809934
LEDs II
Proc. SPIE 7216, Recent development of nitride LEDs and LDs, 72161Z (17 February 2009); doi: 10.1117/12.808682
Proc. SPIE 7216, 222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template, 721621 (16 February 2009); doi: 10.1117/12.809729
Proc. SPIE 7216, Green light emission from selectively grown InGaN multiple quantum well stripes oriented along [11-20] direction, 721622 (19 February 2009); doi: 10.1117/12.809179
Proc. SPIE 7216, Femtosecond pump-probe characterization of high-pressure grown AlxGa1-xN single crystals, 721623 (19 February 2009); doi: 10.1117/12.813413
LEDs III
Proc. SPIE 7216, Multi-color light-emitting diodes based on GaN microstructures, 721624 (19 February 2009); doi: 10.1117/12.808641
Proc. SPIE 7216, Multiple functional UV devices based on III-Nitride quantum wells for biological warfare agent detection, 721627 (16 February 2009); doi: 10.1117/12.808469
Proc. SPIE 7216, Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate, 721628 (17 February 2009); doi: 10.1117/12.811348
Proc. SPIE 7216, Array of GaN-based transverse junction blue light emitting diodes with regrown n-type regimes, 721629 (17 February 2009); doi: 10.1117/12.808713
Novel Devices
Proc. SPIE 7216, AlGaN/GaN HEMT And ZnO nanorod-based sensors for chemical and bio-applications, 72162A (19 February 2009); doi: 10.1117/12.802823
Poster Session
Proc. SPIE 7216, Growth and characterization of isotopic (nat)Ga(15)N by molecular-beam epitaxy, 72162D (19 February 2009); doi: 10.1117/12.808461
Proc. SPIE 7216, GaN-based vertical cavities on highly reflective and crack-free nitride distributed Bragg reflectors, 72162F (19 February 2009); doi: 10.1117/12.807902
Proc. SPIE 7216, Carrier screening effect in AlGaN quantum-well avalanche photodiode, 72162G (17 February 2009); doi: 10.1117/12.808416
Proc. SPIE 7216, Nitride-based p-i-n photodetectors with Ni catalyst processing, 72162H (19 February 2009); doi: 10.1117/12.808536
Proc. SPIE 7216, Employment of III-nitride/silicon heterostructures for dual-band UV/IR photodiodes, 72162K (20 February 2009); doi: 10.1117/12.810085
Proc. SPIE 7216, Transient current spectroscopy of lattice matched InAlN/AlN/GaN HFETs for identification of traps resulting in gate lag, 72162L (20 February 2009); doi: 10.1117/12.809795
Proc. SPIE 7216, Ferroelectric field effect transistor with a double-gate structure on AlGaN/GaN heterostructures, 72162M (20 February 2009); doi: 10.1117/12.811671
Proc. SPIE 7216, Two dimensional electron gas in GaN heterojunction field effect transistors structures with AlN spacer, 72162N (20 February 2009); doi: 10.1117/12.811678
Proc. SPIE 7216, Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures, 72162P (16 February 2009); doi: 10.1117/12.810165
Proc. SPIE 7216, Light extraction improvement of GaN-based light-emitting diodes using patterned undoped GaN bottom reflection gratings, 72162Q (20 February 2009); doi: 10.1117/12.805480
Proc. SPIE 7216, Electrical defects in AlGaN and InAlN, 72162R (20 February 2009); doi: 10.1117/12.815020
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