PROCEEDINGS VOLUME 7230
SPIE OPTO: INTEGRATED OPTOELECTRONIC DEVICES | 24-29 JANUARY 2009
Novel In-Plane Semiconductor Lasers VIII
Proceedings Volume 7230 is from: Logo
SPIE OPTO: INTEGRATED OPTOELECTRONIC DEVICES
24-29 January 2009
San Jose, California, United States
Front Matter
Proc. SPIE 7230, Front Matter: Volume 7230, 723001 (23 February 2009); doi: 10.1117/12.823975
Novel Materials I
Proc. SPIE 7230, Metamorphic InGaAs telecom lasers on GaAs, 723003 (3 February 2009); doi: 10.1117/12.808787
Novel Materials II
Proc. SPIE 7230, Self pulsing quantum dot lasers for optical coherence tomography, 72300A (6 February 2009); doi: 10.1117/12.813504
Proc. SPIE 7230, Coherence length characteristics from broadband semiconductor emitters: superluminescent diodes versus broadband laser diodes, 72300B (3 February 2009); doi: 10.1117/12.809118
Proc. SPIE 7230, Multi-contact quantum dot superluminescent diodes for optical coherence tomography, 72300C (3 February 2009); doi: 10.1117/12.808243
Nitrides
Proc. SPIE 7230, Ultraviolet laser diodes on sapphire and AlN substrates, 72300E (3 February 2009); doi: 10.1117/12.810926
Proc. SPIE 7230, Impact of filamentation on the far-field of high power broad ridge (Al,In)GaN laser diodes, 72300F (3 February 2009); doi: 10.1117/12.807454
Proc. SPIE 7230, Staggered InGaN quantum well diode lasers emitting at 500 nm, 72300G (3 February 2009); doi: 10.1117/12.808561
Ring Lasers and Integration
Proc. SPIE 7230, Semiconductor micro-ring and micro-disk lasers for all-optical switching, 72300I (3 February 2009); doi: 10.1117/12.809739
Proc. SPIE 7230, Loss characterization of high-index-contrast ridge waveguide oxide-confined InAlGaAs quantum well racetrack ring-resonator lasers, 72300J (3 February 2009); doi: 10.1117/12.807871
Integration and Devices for Comms
Proc. SPIE 7230, A single comb laser source for short reach WDM interconnects, 72300M (3 February 2009); doi: 10.1117/12.816278
Proc. SPIE 7230, Discrete mode lasers for communications applications, 72300N (3 February 2009); doi: 10.1117/12.810811
Proc. SPIE 7230, Multi-purpose InGaAsP buried heterostructure laser diodes for uncooled digital, analog, and wireless applications grown by molecular beam epitaxy and metal-organic chemical-vapor deposition, 72300O (3 February 2009); doi: 10.1117/12.807773
Mid-IR Lasers
Proc. SPIE 7230, High-performance interband cascade lasers emitting in the 2.9-4.2 um wavelength range, 72300R (3 February 2009); doi: 10.1117/12.809351
Proc. SPIE 7230, Recent progress in interband cascade lasers with separate confinement layers, 72300S (3 February 2009); doi: 10.1117/12.807595
Proc. SPIE 7230, Rapid and minimally invasive quantum cascade wafer testing, 72300T (3 February 2009); doi: 10.1117/12.810258
Silicon Photonics: Joint Session with Conference 7220
Proc. SPIE 7230, Grating based hybrid silicon lasers, 72300U (3 February 2009); doi: 10.1117/12.807777
COMD
Proc. SPIE 7230, New approaches towards the understanding of the catastrophic optical damage process in in-plane diode lasers, 72300V (3 February 2009); doi: 10.1117/12.806701
Proc. SPIE 7230, Bulk temperature mapping of broad area quantum dot lasers: modeling and micro-thermographic analysis, 72300W (3 February 2009); doi: 10.1117/12.808298
Proc. SPIE 7230, Higher power density limit at COMD in GaInP/AlGaInP in quantum dots than in wells, 72300X (6 February 2009); doi: 10.1117/12.809341
Proc. SPIE 7230, Degradation processes in high power multi-mode InGaAs strained quantum well lasers, 72300Y (3 February 2009); doi: 10.1117/12.814661
Quantum Cascade Lasers I
Proc. SPIE 7230, High-power high-wall plug efficiency mid-infrared quantum cascade lasers based on InP/GaInAs/InAlAs material system, 723011 (3 February 2009); doi: 10.1117/12.813923
Proc. SPIE 7230, Voltage tuning of gain spectra in quantum cascade lasers, 723012 (3 February 2009); doi: 10.1117/12.808295
Proc. SPIE 7230, Characteristics of deep-well 4.8-um emitting quantum-cascade lasers grown by MOCVD, 723013 (3 February 2009); doi: 10.1117/12.808268
Quantum Cascade Lasers II
Proc. SPIE 7230, Coherence and beam shaping in quantum cascade lasers, 723015 (3 February 2009); doi: 10.1117/12.808466
Proc. SPIE 7230, Quantum cascade lasers based on single phonon-continuum depopulation structures, 723016 (3 February 2009); doi: 10.1117/12.808355
Proc. SPIE 7230, Intracavity second harmonic generation in quantum cascade lasers in the telecommunication range, 723017 (3 February 2009); doi: 10.1117/12.809372
Quantum Cascade Laser Physics
Proc. SPIE 7230, Predictive quantum theory of current and optical emission in quantum cascade lasers, 723019 (3 February 2009); doi: 10.1117/12.808483
Proc. SPIE 7230, Simulation of gain in quantum cascade lasers, 72301A (3 February 2009); doi: 10.1117/12.808882
High Power I
Proc. SPIE 7230, External-to-cavity lateral-mode harnessing devices for high-brightness broad-area laser diodes: concept, realizations, and perspectives, 72301B (3 February 2009); doi: 10.1117/12.808681
Proc. SPIE 7230, High-brightness tapered lasers with an Al-free active region at 1060 nm, 72301D (3 February 2009); doi: 10.1117/12.808427
Proc. SPIE 7230, 1060 nm DBR tapered lasers with 12 W output power and a nearly diffraction limited beam quality, 72301E (3 February 2009); doi: 10.1117/12.806690
Proc. SPIE 7230, High-power DBR laser diodes grown in a single epitaxial step, 72301F (3 February 2009); doi: 10.1117/12.807872
High Power II
Proc. SPIE 7230, Coherent combination of slab-coupled optical waveguide lasers, 72301G (3 February 2009); doi: 10.1117/12.816748
Proc. SPIE 7230, High-power high-reliability narrow-linewidth Al-free DFB laser diode for Cs pumping (852 nm), 72301H (3 February 2009); doi: 10.1117/12.808191
Proc. SPIE 7230, High power DFB lasers for D1 and D2 rubidium absorption spectroscopy and atomic clocks, 72301I (3 February 2009); doi: 10.1117/12.805858
Proc. SPIE 7230, Ultra-fine pitch individually addressable visible laser arrays for high speed digital printing applications, 72301J (3 February 2009); doi: 10.1117/12.809088
Proc. SPIE 7230, Diode laser arrays for 1.8 to 2.3 µm wavelength range, 72301K (3 February 2009); doi: 10.1117/12.809014
Proc. SPIE 7230, Control of slow axis mode behavior with waveguide phase structures in semiconductor broad-area lasers, 72301L (3 February 2009); doi: 10.1117/12.819399
Mid-IR Applications
Proc. SPIE 7230, High performance results and applications of miniaturized external-cavity quantum cascade lasers (ECqcL), 72301M (3 February 2009); doi: 10.1117/12.809616
Proc. SPIE 7230, Native-oxide-confined mid-IR quantum cascade lasers via non-selective oxygen-enhanced wet oxidation, 72301O (3 February 2009); doi: 10.1117/12.809788
Proc. SPIE 7230, Effect of waveguide side-wall roughness on the performance of quantum cascade lasers, 72301P (3 February 2009); doi: 10.1117/12.808227
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