PROCEEDINGS VOLUME 7231
SPIE OPTO: INTEGRATED OPTOELECTRONIC DEVICES | 24-29 JANUARY 2009
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII
IN THIS VOLUME

0 Sessions, 22 Papers, 0 Presentations
Front Matter  (1)
UV LEDs  (3)
Phosphors  (2)
Proceedings Volume 7231 is from: Logo
SPIE OPTO: INTEGRATED OPTOELECTRONIC DEVICES
24-29 January 2009
San Jose, California, United States
Front Matter
Proc. SPIE 7231, Front Matter: 7231, 723101 (23 February 2009); doi: 10.1117/12.823976
LED Design and Fabrication I
Proc. SPIE 7231, Color-consistent LED modules for general lighting, 72310A (3 February 2009); doi: 10.1117/12.816465
Proc. SPIE 7231, Beam-shaping properties of InGaN thin-film micro-cavity light-emitting diodes with photonic crystals, 72310C (3 February 2009); doi: 10.1117/12.807617
Proc. SPIE 7231, Growth of staggered InGaN quantum well light-emitting diodes emitting at 520-525 nm employing graded temperature profile, 72310E (3 February 2009); doi: 10.1117/12.808542
UV LEDs
Proc. SPIE 7231, MOVPE growth for UV-LEDs, 72310G (3 February 2009); doi: 10.1117/12.816927
Proc. SPIE 7231, Effect of UV irradiation on the apoptosis and necrosis of Jurkat cells using UV LEDs, 72310J (3 February 2009); doi: 10.1117/12.809929
Proc. SPIE 7231, Reduced non-thermal roll-over in violet-emitting GaInN wide-well LEDs grown on low-dislocation-density substrates, 72310K (3 February 2009); doi: 10.1117/12.819404
LED Manufacturing
Proc. SPIE 7231, Decay of lumen and chromaticity of high-power phosphor-converted white-light-emitting diodes in thermal aging, 72310O (3 February 2009); doi: 10.1117/12.807560
Proc. SPIE 7231, Photoluminescence mapping as a tool to improve LED production, 72310P (3 February 2009); doi: 10.1117/12.814665
Proc. SPIE 7231, High-performance heat sink for solid-state lighting, 72310Q (5 February 2009); doi: 10.1117/12.808662
LED Design and Fabrication II
Proc. SPIE 7231, Enhancement of light extraction efficiency of InGaN quantum well light-emitting diodes with polydimethylsiloxane concave microstructures, 72310U (3 February 2009); doi: 10.1117/12.808600
Proc. SPIE 7231, A 4.26-um RCLED and a fast low-power CO2 sensor, 72310V (3 February 2009); doi: 10.1117/12.809293
Proc. SPIE 7231, Electrical and optical characteristics of green light-emitting diodes grown on bulk GaN substrates, 72310W (3 February 2009); doi: 10.1117/12.809883
Phosphors
Proc. SPIE 7231, Up and down: color conversion for solid-state lighting, 72310X (3 February 2009); doi: 10.1117/12.809033
Proc. SPIE 7231, Improved predictive modeling of white LEDs with accurate luminescence simulation and practical inputs with TracePro opto-mechanical design software, 723111 (3 February 2009); doi: 10.1117/12.810417
Nanostructures
Proc. SPIE 7231, Growth and luminescence properties of one-dimensional InN and InGaN nanostructures, 723112 (3 February 2009); doi: 10.1117/12.810438
Novel Substrates
Proc. SPIE 7231, High quality free-standing GaN thick-films prepared by hydride vapor phase epitaxy using stress reducing techniques, 723116 (3 February 2009); doi: 10.1117/12.814441
Proc. SPIE 7231, GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE, 723118 (3 February 2009); doi: 10.1117/12.814919
Proc. SPIE 7231, Development of new substrate technologies for GaN LEDs: atomic layer deposition transition layers on silicon and ZnO, 723119 (3 February 2009); doi: 10.1117/12.815324
Poster Session
Proc. SPIE 7231, Stray light rejection techniques for LED measurements using CCD based spectrometers, 72311E (3 February 2009); doi: 10.1117/12.809241
Proc. SPIE 7231, Simulator for assessing the performance of polychromatic LED light sources, 72311F (3 February 2009); doi: 10.1117/12.810054
Proc. SPIE 7231, Weak-microcavity organic light-emitting diodes with improved light-extraction and wide viewing-angle, 72311H (3 February 2009); doi: 10.1117/12.810978
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