Front Matter
Proc. SPIE 7273, Front Matter: Volume 7273, 727301 (4 April 2009); doi: 10.1117/12.831120
Double Patterning and Double Exposure I
Proc. SPIE 7273, Newly developed positive tone resists for Posi/Posi double patterning process, 727304 (1 April 2009); doi: 10.1117/12.814028
Proc. SPIE 7273, Engine for characterization of defects, overlay, and critical dimension control for double exposure processes for advanced logic nodes, 727305 (1 April 2009); doi: 10.1117/12.828483
Proc. SPIE 7273, Materials for single-etch double patterning process: surface curing agent and thermal cure resist, 727306 (1 April 2009); doi: 10.1117/12.814274
Proc. SPIE 7273, Double-exposure materials for pitch division with 193nm lithography: requirements, results, 727307 (1 April 2009); doi: 10.1117/12.814352
Proc. SPIE 7273, Topcoat-free ArF negative tone resist, 727308 (1 April 2009); doi: 10.1117/12.813787
Double Patterning and Double Exposure II
Proc. SPIE 7273, Correlation of experimental and simulated cure-induced photoresist distortions in double patterning, 727309 (1 April 2009); doi: 10.1117/12.814474
Proc. SPIE 7273, Fine trench patterns with double patterning and trench shrink technology, 72730A (1 April 2009); doi: 10.1117/12.814097
Proc. SPIE 7273, Double patterning process with freezing technique, 72730B (1 April 2009); doi: 10.1117/12.814073
Proc. SPIE 7273, Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process, 72730C (1 April 2009); doi: 10.1117/12.814093
Proc. SPIE 7273, Photoresist stabilization for double patterning using 172 nm photoresist curing, 72730D (1 April 2009); doi: 10.1117/12.814468
Poster Session: Novel Materials, Processes, and Applications
Proc. SPIE 7273, DUV-assisted e-beam resist process, 72730E (1 April 2009); doi: 10.1117/12.813626
Proc. SPIE 7273, Improved CD uniformity for chemical shrink patterning, 72730F (1 April 2009); doi: 10.1117/12.814359
Proc. SPIE 7273, Fabrication of 22-nm poly-silicon gate using resist shrink technology, 72730G (1 April 2009); doi: 10.1117/12.814365
Proc. SPIE 7273, Properties of the novel deprotecting unit for next-generation ArF resist polymer, 72730H (1 April 2009); doi: 10.1117/12.814096
Proc. SPIE 7273, Chemically amplified hybrid resist platform for i-line applications, 72730J (1 April 2009); doi: 10.1117/12.816044
Proc. SPIE 7273, Criteria for success in e-beam resists, 72730K (1 April 2009); doi: 10.1117/12.816048
Proc. SPIE 7273, 0.30k1 CH delineation with novel image reversal materials, 72730L (1 April 2009); doi: 10.1117/12.816084
Proc. SPIE 7273, KrF resists and process for implant layers at advanced nodes, 72730M (1 April 2009); doi: 10.1117/12.816136
Proc. SPIE 7273, Process-induced bias: a study of resist design, device node, illumination conditions, and process implications, 72730N (1 April 2009); doi: 10.1117/12.814395
Proc. SPIE 7273, Microbridge and e-test opens defectivity reduction via improved filtration of photolithography fluids, 72730O (1 April 2009); doi: 10.1117/12.814374
Proc. SPIE 7273, Post-develop blob defect reduction, 72730P (1 April 2009); doi: 10.1117/12.813605
Proc. SPIE 7273, Embedded micro/nano channel formation for three-dimensional negative-tone photoresist microstructuring, 72730R (1 April 2009); doi: 10.1117/12.814244
Proc. SPIE 7273, Analysis of the effect of point-of-use filtration on microbridging defectivity, 72730S (1 April 2009); doi: 10.1117/12.813471
Proc. SPIE 7273, Novel resist for replica preparation of mold for imprint lithography, 72730T (1 April 2009); doi: 10.1117/12.813383
Proc. SPIE 7273, Pressure control for reduced microbubble formation, 72730U (1 April 2009); doi: 10.1117/12.813651
Proc. SPIE 7273, Productivity improvement in the wafer backside cleaning before exposure, 72730V (1 April 2009); doi: 10.1117/12.814021
Proc. SPIE 7273, Development of novel UV cross-linkable materials for enhancing planarity in via applications via the correlation of simulated and experimental analyses, 72730W (1 April 2009); doi: 10.1117/12.813530
Proc. SPIE 7273, Comparison of thermal flow and chemical shrink processes for 193 nm contact hole patterning, 72730X (1 April 2009); doi: 10.1117/12.816633
Poster Session: ARCs and Multilayer Processes
Proc. SPIE 7273, Message to the undecided: using DUV dBARC for 32-nm node implants, 72730Y (1 April 2009); doi: 10.1117/12.814269
Proc. SPIE 7273, Investigation of the foot-exposure impact in hyper-NA immersion lithography when using thin anti-reflective coating, 72730Z (1 April 2009); doi: 10.1117/12.813667
Proc. SPIE 7273, Organic underlayer materials with exceptionally high thermal stability, 727310 (1 April 2009); doi: 10.1117/12.814082
Proc. SPIE 7273, Effects of carbon/hardmask interactions on hardmask performance, 727311 (1 April 2009); doi: 10.1117/12.814257
Proc. SPIE 7273, Improving the performance of light-sensitive developer-soluble anti-reflective coatings by using adamantyl terpolymers, 727312 (1 April 2009); doi: 10.1117/12.813783
Proc. SPIE 7273, Controlling etch properties of silicon-based antireflective spin-on hardmask materials, 727313 (1 April 2009); doi: 10.1117/12.814075
Proc. SPIE 7273, Modified trilayer resist approach for ArF immersion lithography, 727314 (19 May 2009); doi: 10.1117/12.814013
Proc. SPIE 7273, Radiation sensitive developable bottom anti-reflective coatings (DBARC): recent results, 727316 (1 April 2009); doi: 10.1117/12.816375
Proc. SPIE 7273, Reflection control for immersion lithography: a single organic antireflectant over high-reflective substrates for double patterning, 727318 (10 April 2009); doi: 10.1117/12.816448
Poster Session: Double Patterning and Double Exposure
Proc. SPIE 7273, Utilization of spin-on and reactive ion etch critical dimension shrink with double patterning for 32 nm and beyond contact level interconnects, 72731A (1 April 2009); doi: 10.1117/12.814260
Proc. SPIE 7273, Optical threshold layer and intermediate state two-photon PAG approaches to double exposure lithography, 72731B (1 April 2009); doi: 10.1117/12.814295
Proc. SPIE 7273, Fundamental study of optical threshold layer approach towards double exposure lithography, 72731C (1 April 2009); doi: 10.1117/12.814298
Proc. SPIE 7273, CD uniformity improvement for double-patterning lithography (litho-litho-etch) using freezing process, 72731D (1 April 2009); doi: 10.1117/12.814033
Proc. SPIE 7273, Contact formation with extremely low proximity effect by double patterning technology, 72731E (1 April 2009); doi: 10.1117/12.812466
Proc. SPIE 7273, Double imaging with resist freezing in a vapor reaction chamber, 72731F (1 April 2009); doi: 10.1117/12.815138
Proc. SPIE 7273, Study of the simulation parameter for EUVL, 72731G (1 April 2009); doi: 10.1117/12.814990
Proc. SPIE 7273, Process latitude simulation of positive-tone litho-litho-etch double patterning, 72731H (1 April 2009); doi: 10.1117/12.816581
Proc. SPIE 7273, Performance of an ArF siloxane BARC exposed to a 172-nm UV cure for double patterning applications, 72731I (1 April 2009); doi: 10.1117/12.814416
Poster Session: EUV Resist Materials and Processes
Proc. SPIE 7273, Underlayer designs to enhance the performance of EUV resists, 72731J (1 April 2009); doi: 10.1117/12.814223
Proc. SPIE 7273, Resolution and LWR improvements by acid diffusion control in EUV lithography, 72731K (1 April 2009); doi: 10.1117/12.814067
Proc. SPIE 7273, EUV lithography for 30nm half pitch and beyond: exploring resolution, sensitivity, and LWR tradeoffs, 72731L (1 April 2009); doi: 10.1117/12.814191
Proc. SPIE 7273, Development of EUV resists at Selete, 72731M (1 April 2009); doi: 10.1117/12.812937
Proc. SPIE 7273, Non-chemically amplified negative resist for EUV lithography, 72731N (1 April 2009); doi: 10.1117/12.813377
Proc. SPIE 7273, Pattern transfer process development for EUVL, 72731O (1 April 2009); doi: 10.1117/12.812928
Proc. SPIE 7273, EUV resist outgassing quantification and application, 72731P (1 April 2009); doi: 10.1117/12.813362
Proc. SPIE 7273, EUV resist processing in vacuum, 72731Q (1 April 2009); doi: 10.1117/12.813365