Front Matter
Proc. SPIE 7379, Front Matter: Volume 7379, 737901 (24 April 2009); doi: 10.1117/12.833610
Invited Session
Proc. SPIE 7379, Litho/mask strategies for 32-nm half-pitch and beyond: using established and adventurous tools/technologies to improve cost and imaging performance, 737902 (11 May 2009); doi: 10.1117/12.824243
Material and Process I
Proc. SPIE 7379, The novel plasma etching process for defect reduction in photomask fabrication, 737906 (11 May 2009); doi: 10.1117/12.824247
Proc. SPIE 7379, Etch characterization of binary mask dependence on mask material and resist thickness for 22nm mask fabrication, 737907 (11 May 2009); doi: 10.1117/12.824248
Material and Process II
Proc. SPIE 7379, Effect of pellicle frame and adhesive material on final photomask flatness, 737909 (11 May 2009); doi: 10.1117/12.824250
Proc. SPIE 7379, Adhesion control between resist patterns and photomask blank surfaces, 73790A (11 May 2009); doi: 10.1117/12.824251
Proc. SPIE 7379, Investigation of the development process for high-precision patterning, 73790B (11 May 2009); doi: 10.1117/12.824252
Proc. SPIE 7379, Study on surface integrity in photomask resist strip and final cleaning processes, 73790D (11 May 2009); doi: 10.1117/12.824254
Proc. SPIE 7379, Haze growth on reticles: What's the RigHT thing to do?, 73790F (11 May 2009); doi: 10.1117/12.824256
EUVL Mask I
Proc. SPIE 7379, SEMATECH EUVL mask program status, 73790G (11 May 2009); doi: 10.1117/12.824257
Proc. SPIE 7379, Actinic EUVL mask blank inspection and phase defect characterization, 73790H (11 May 2009); doi: 10.1117/12.824258
Proc. SPIE 7379, Improvement of EUVL mask blank inspection capability at Intel, 73790I (11 May 2009); doi: 10.1117/12.824259
Proc. SPIE 7379, Thorough characterization of an EUV mask, 73790J (11 May 2009); doi: 10.1117/12.824260
NIL and Patterned Media
Proc. SPIE 7379, Nano-pattern design and technology for patterned media magnetic recording, 73790K (11 May 2009); doi: 10.1117/12.824261
Proc. SPIE 7379, Si-mold fabrication for patterned media using high-resolution chemically amplified resist, 73790L (11 May 2009); doi: 10.1117/12.824262
Proc. SPIE 7379, Inspection and repair for imprint lithography at 32 nm and below, 73790N (11 May 2009); doi: 10.1117/12.824264
EUVL Mask II
Proc. SPIE 7379, Implications of image plane line-edge roughness requirements on extreme ultraviolet mask specifications, 73790O (11 May 2009); doi: 10.1117/12.824265
Proc. SPIE 7379, Mask-induced aberration in EUV lithography, 73790P (11 May 2009); doi: 10.1117/12.824266
Proc. SPIE 7379, Evaluation of an e-beam correction strategy for compensation of EUVL mask non-flatness, 73790Q (11 May 2009); doi: 10.1117/12.824267
Proc. SPIE 7379, Investigation of EUV mask defectivity via full-field printing and inspection on wafer, 73790R (11 May 2009); doi: 10.1117/12.824268
Strategy and Business
Proc. SPIE 7379, Smart way to determine and guarantee mask specifications: tradeoff between cost and quality, 73790T (11 May 2009); doi: 10.1117/12.824270
Proc. SPIE 7379, Economics of automation for the design-to-mask interface, 73790U (11 May 2009); doi: 10.1117/12.824271
Proc. SPIE 7379, Novel mask qualification methodology with die-to-database wafer inspection system, 73790V (11 May 2009); doi: 10.1117/12.824272
EDA, DFM, and MDP
Proc. SPIE 7379, European MEDEA+ CRYSTAL project: DFM photomasks inputs for EDA workflow task force, 73790W (11 May 2009); doi: 10.1117/12.824273
Proc. SPIE 7379, Reduction of MRC error review time through the simplified and classified MRC result, 73790X (11 May 2009); doi: 10.1117/12.824274
Proc. SPIE 7379, Multi-core advantages for mask data preparation, 73790Y (11 May 2009); doi: 10.1117/12.824275
Proc. SPIE 7379, GPU-accelerated inverse lithography technique, 73790Z (11 May 2009); doi: 10.1117/12.824276
Proc. SPIE 7379, Effect of scanner illumination and lens transmittance signatures on OPC accuracy, 737910 (11 May 2009); doi: 10.1117/12.824277
Proc. SPIE 7379, Lithography compliance check considering neighboring cell structures for robust cell design, 737911 (11 May 2009); doi: 10.1117/12.824278
Metrology
Proc. SPIE 7379, The imaging performance of flash memory masks characterized with AIMS, 737912 (11 May 2009); doi: 10.1117/12.824279
Proc. SPIE 7379, A new optical measurement method for verifying the exact change of thin films on the QZ blanks with ellipsometer, 737913 (11 May 2009); doi: 10.1117/12.824315
Proc. SPIE 7379, Calibration strategies for precision stages in state-of-the-art registration metrology, 737914 (11 May 2009); doi: 10.1117/12.824281
Proc. SPIE 7379, In-die mask registration metrology for 32nm node DPT lithography, 737915 (11 May 2009); doi: 10.1117/12.824282
Proc. SPIE 7379, Phase behavior through pitch and duty cycle and its impact on process window, 737916 (11 May 2009); doi: 10.1117/12.824283
Writing Technology
Proc. SPIE 7379, E-beam shot count estimation at 32 nm HP and beyond, 737917 (11 May 2009); doi: 10.1117/12.824284
Proc. SPIE 7379, Present status of multi-column cell exposure system for mask writing, 737918 (11 May 2009); doi: 10.1117/12.824285
Proc. SPIE 7379, Mask and wafer evaluation of Sigma7500 pattern generator applied to 65nm logic metal and via layers, 737919 (11 May 2009); doi: 10.1117/12.824286
Proc. SPIE 7379, Reduction of resist charging effect by EB reticle writer EBM-7000, 73791A (11 May 2009); doi: 10.1117/12.824287
Inspection and Repair I
Proc. SPIE 7379, Mask-LMC: lithographic simulation and defect detection from high-resolution mask images, 73791B (11 May 2009); doi: 10.1117/12.824288
Proc. SPIE 7379, Implementation strategy of wafer-plane and aerial-plane inspection for advanced mask manufacture, 73791C (11 May 2009); doi: 10.1117/12.824289
Proc. SPIE 7379, Reticle inspection-based critical dimension uniformity, 73791D (11 May 2009); doi: 10.1117/12.824319
Proc. SPIE 7379, Mask defect auto disposition based on aerial image in mask production, 73791F (11 May 2009); doi: 10.1117/12.824292
Inspection and Repair II
Proc. SPIE 7379, Airborne molecular contamination detection method for photomasks and ultra purging decontamination, 73791G (11 May 2009); doi: 10.1117/12.824293
Proc. SPIE 7379, A new approach to reticle haze defect management in the fab, 73791H (11 May 2009); doi: 10.1117/12.824294
Proc. SPIE 7379, Advances in post AFM repair cleaning of photomask with CO2 cryogenic aerosol technology, 73791I (11 May 2009); doi: 10.1117/12.824295
Proc. SPIE 7379, Selective removal of persistent particles with no photomask damage, 73791J (11 May 2009); doi: 10.1117/12.824296
Mask-related Lithography
Poster Session: Material and Process
Proc. SPIE 7379, The art of photomask materials for low-k1-193nm lithography, 73791Q (11 May 2009); doi: 10.1117/12.830600
Proc. SPIE 7379, Evaluation of the flatness effects of mask backing and orientation during photomask pellicle mount, 73791R (11 May 2009); doi: 10.1117/12.824303
Proc. SPIE 7379, Evaluation for EAPSM life time by ArF pellicle characteristic, 73791S (11 May 2009); doi: 10.1117/12.824304
Proc. SPIE 7379, In situ selectivity monitor for dry etch of photomasks, 73791T (11 May 2009); doi: 10.1117/12.824305
Proc. SPIE 7379, Plasma optical emission analysis for chamber condition monitor, 73791U (11 May 2009); doi: 10.1117/12.824306