PROCEEDINGS VOLUME 7422
SPIE OPTICAL ENGINEERING + APPLICATIONS | 2-6 AUGUST 2009
Ninth International Conference on Solid State Lighting
IN THIS VOLUME

0 Sessions, 25 Papers, 0 Presentations
Front Matter  (1)
Growth I  (2)
Phosphors  (2)
Growth II  (4)
Growth III  (2)
Proceedings Volume 7422 is from: Logo
SPIE OPTICAL ENGINEERING + APPLICATIONS
2-6 August 2009
San Diego, California, United States
Front Matter
Proc. SPIE 7422, Front Matter: Volume 7422, 742201 (15 September 2009); doi: 10.1117/12.846229
Growth I
Proc. SPIE 7422, The effect of Mg and Si impurities on the optical property of InGaN-light emitting diode, 742203 (18 August 2009); doi: 10.1117/12.829445
Proc. SPIE 7422, Green LED development in polar and non-polar growth orientation, 742204 (18 August 2009); doi: 10.1117/12.829513
Alternative Design
Proc. SPIE 7422, The design of a spectrally tunable light source, 742206 (18 August 2009); doi: 10.1117/12.829380
Proc. SPIE 7422, Practical method for measurement of AC-driven LEDs at a given junction temperature by using active heat sinks, 742208 (18 August 2009); doi: 10.1117/12.826743
Proc. SPIE 7422, Developing an accelerated life test method for LED drivers, 742209 (18 August 2009); doi: 10.1117/12.829901
Solid State Lighting and OLEDs Plenary Session
Proc. SPIE 7422, Recent progress and future prospect of high-performance near-UV based white LEDs: from ECO lighting to medical application, 74220B (18 August 2009); doi: 10.1117/12.829225
Phosphors
Proc. SPIE 7422, Phosphor quenching in LED packages: measurements, mechanisms, and paths forward, 74220E (18 August 2009); doi: 10.1117/12.829136
Proc. SPIE 7422, Extensive analysis of the degradation of phosphor-converted LEDs, 74220H (18 August 2009); doi: 10.1117/12.826062
Growth II
Proc. SPIE 7422, III-nitride epilayers on ZnO Substrates by MOCVD using Al2O3 as a transition layer, 74220J (18 August 2009); doi: 10.1117/12.829482
Proc. SPIE 7422, Nanoscale InGaN/GaN on ZnO substrate for LED applications, 74220K (18 August 2009); doi: 10.1117/12.825851
Proc. SPIE 7422, Method for controlling light emission of LEDs, 74220L (18 August 2009); doi: 10.1117/12.825086
Proc. SPIE 7422, Low temperature buffer growth for the development of vertical light emitting diodes, 74220M (18 August 2009); doi: 10.1117/12.829516
Growth III
Proc. SPIE 7422, MOCVD growth of GaN on Si substrates using an ALD-grown Al2O3 interlayer, 74220P (18 August 2009); doi: 10.1117/12.828462
Proc. SPIE 7422, Optical properties and material studies of InGaN/GaN multi-quantum well light emitting diode wafers with different structures, 74220Q (18 August 2009); doi: 10.1117/12.825895
Application I
Proc. SPIE 7422, LED solution for E14 candle lamp, 74220T (18 August 2009); doi: 10.1117/12.835609
Proc. SPIE 7422, Understanding heat transfer mechanisms in recessed LED luminaires, 74220V (18 August 2009); doi: 10.1117/12.829902
Application II
Proc. SPIE 7422, SSL technology development and commercialization in the global context, 74220X (18 August 2009); doi: 10.1117/12.829522
Proc. SPIE 7422, An active lighting module with natural light guiding system and solid state source for indoor illumination, 74220Z (18 August 2009); doi: 10.1117/12.825269
Proc. SPIE 7422, Design a programmable Fresnel lens and arrange LED sources to optimize the illuminance and uniformity of a medium or large LED-based lighting system with varied shapes, 742211 (18 August 2009); doi: 10.1117/12.825962
Proc. SPIE 7422, Color rendering ability and luminous efficacy enhancements in white light-emitting diodes, 742212 (18 August 2009); doi: 10.1117/12.836996
Poster Session
Proc. SPIE 7422, Investigation of illumination efficiency on the LED therapy with different array types, 742215 (18 August 2009); doi: 10.1117/12.825443
Proc. SPIE 7422, The influence of Si doping to the characteristics of AlGaAs / AlAs distributed Bragg reflectors, 742216 (18 August 2009); doi: 10.1117/12.825596
Proc. SPIE 7422, Resonant acoustic calorimetry of the interaction of high-power laser radiation with crystals, 742217 (18 August 2009); doi: 10.1117/12.828136
Proc. SPIE 7422, Optical and structural properties of InN grown by HPCVD, 742218 (18 August 2009); doi: 10.1117/12.828163
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