PROCEEDINGS VOLUME 7470
25TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE | 12-15 JANUARY 2009
25th European Mask and Lithography Conference
IN THIS VOLUME

0 Sessions, 43 Papers, 0 Presentations
Front Matter  (1)
EUV I  (4)
NIL  (4)
Metrology  (4)
ML2  (4)
EUV II  (3)
25TH EUROPEAN MASK AND LITHOGRAPHY CONFERENCE
12-15 January 2009
Dresden, Germany
Front Matter
Proc. SPIE 7470, Front Matter: Vol. 7470, 747001 (12 June 2009); doi: 10.1117/12.834189
Plenary Session I
Proc. SPIE 7470, Lithography development and research challenges for the ≤22nm half-pitch, 747002 (23 May 2009); doi: 10.1117/12.834186
Proc. SPIE 7470, Mask industry assessment trend analysis, 747003 (27 May 2009); doi: 10.1117/12.835157
Plenary Session II
Proc. SPIE 7470, Mask salvage in the age of capital contraction, 747004 (27 May 2009); doi: 10.1117/12.835795
Mask Business and Application
Proc. SPIE 7470, SEMATECH mask program, 747005 (27 May 2009); doi: 10.1117/12.835796
Proc. SPIE 7470, Mask parameter variation in the context of the overall variation budget of an advanced logic wafer Fab, 747006 (27 May 2009); doi: 10.1117/12.835166
Simulation and Double Patterning
Proc. SPIE 7470, Extended Abbe approach for fast and accurate lithography imaging simulations, 747007 (27 May 2009); doi: 10.1117/12.835168
Proc. SPIE 7470, Decomposition algorithm for double patterning of contacts and via layers, 747008 (27 May 2009); doi: 10.1117/12.835169
Proc. SPIE 7470, Mask contribution on CD and OVL errors budgets for double patterning lithography, 747009 (27 May 2009); doi: 10.1117/12.835171
Mask Cleaning/Haze
Proc. SPIE 7470, New methods and processes based on advanced vacuum technology for photomask decontamination, 74700A (27 May 2009); doi: 10.1117/12.835172
Proc. SPIE 7470, Particle transport and reattachment on a mask surface, 74700B (27 May 2009); doi: 10.1117/12.835173
Proc. SPIE 7470, Contamination control for ArF photo masks, 74700C (27 May 2009); doi: 10.1117/12.835174
EUV I
Proc. SPIE 7470, Lithography light source challenges for double patterning and EUVL, 74700D (27 May 2009); doi: 10.1117/12.835175
Proc. SPIE 7470, The task of EUV reflectometry for HVM of EUV masks: first steps, 74700E (27 May 2009); doi: 10.1117/12.835176
Proc. SPIE 7470, EUV and DUV scatterometry for CD and edge profile metrology on EUV masks, 74700F (27 May 2009); doi: 10.1117/12.835177
Proc. SPIE 7470, EUV imaging performance: moving towards production, 74700G (27 May 2009); doi: 10.1117/12.835178
NIL
Proc. SPIE 7470, Resolution capability of EBM-6000 and EBM-7000 for nano-imprint template, 74700H (27 May 2009); doi: 10.1117/12.835179
Proc. SPIE 7470, Electron beam inspection methods for imprint lithography at 32 nm, 74700I (27 May 2009); doi: 10.1117/12.835180
Proc. SPIE 7470, UV NIL template making and imprint evaluation, 74700J (27 May 2009); doi: 10.1117/12.835181
Proc. SPIE 7470, Residual-free imprint for sensor definition, 74700K (27 May 2009); doi: 10.1117/12.835182
Metrology
Proc. SPIE 7470, Monte Carlo simulations of image analysis for flexible and high-resolution registration metrology, 74700L (27 May 2009); doi: 10.1117/12.835183
Proc. SPIE 7470, SEM image contrast modeling for mask and wafer metrology, 74700M (27 May 2009); doi: 10.1117/12.835184
Proc. SPIE 7470, Registration metrology on double patterning reticles, 74700N (27 May 2009); doi: 10.1117/12.835185
Proc. SPIE 7470, Reduced pellicle impact on overlay using high order intrafield grid corrections, 74700O (27 May 2009); doi: 10.1117/12.835186
ML2
Proc. SPIE 7470, High resolution cell projection, 74700P (27 May 2009); doi: 10.1117/12.835187
Proc. SPIE 7470, Mapper: high throughput maskless lithography, 74700Q (27 May 2009); doi: 10.1117/12.835188
Proc. SPIE 7470, New writing strategy in electron beam direct write lithography to improve critical dense lines patterning for sub-45nm nodes, 74700R (27 May 2009); doi: 10.1117/12.835189
Proc. SPIE 7470, A solution to meet new challenges on EBDW data prep, 74700S (27 May 2009); doi: 10.1117/12.835190
Inspection and Pattern Generation
Proc. SPIE 7470, Improving yield and cycle time at the inspection process by means of a new defects disposition technique, 74700T (27 May 2009); doi: 10.1117/12.835191
Proc. SPIE 7470, Nuisance event reduction using sensitivity control layers (SCL) for advanced photomask inspection, 74700U (27 May 2009); doi: 10.1117/12.835192
Proc. SPIE 7470, Increasing inspection equipment productivity by utilizing factory automation SW on TeraScan 5XX systems, 74700V (27 May 2009); doi: 10.1117/12.835193
Proc. SPIE 7470, Error-budget paradigms and laser mask pattern generator evolution, 74700W (27 May 2009); doi: 10.1117/12.835194
EUV II
Proc. SPIE 7470, Ion beam deposition for defect-free EUVL mask blanks, 74700X (27 May 2009); doi: 10.1117/12.835195
Proc. SPIE 7470, EUV actinic defect inspection and defect printability at the sub-32-nm half-pitch, 74700Y (27 May 2009); doi: 10.1117/12.835196
Proc. SPIE 7470, Sub-30-nm defect removal on EUV substrates, 74700Z (27 May 2009); doi: 10.1117/12.835197
Poster Session
Proc. SPIE 7470, Innovative processes investigation for photomask pod conditioning and drying, 747010 (27 May 2009); doi: 10.1117/12.835198
Proc. SPIE 7470, High speed (>100 Gbps) key components for a scalable optical data link to be implemented in future maskless lithography applications, 747011 (27 May 2009); doi: 10.1117/12.835200
Proc. SPIE 7470, Molecular dynamics study on mold fracture by nanoscale defects in nanoimprint lithography, 747012 (27 May 2009); doi: 10.1117/12.835201
Proc. SPIE 7470, Advanced proximity matching with pattern matcher, 747013 (27 May 2009); doi: 10.1117/12.835203
Proc. SPIE 7470, Mounting methodologies to measure EUV reticle nonflatness, 747014 (27 May 2009); doi: 10.1117/12.835202
Proc. SPIE 7470, CDP: application of focus drilling, 747015 (27 May 2009); doi: 10.1117/12.835204
Proc. SPIE 7470, MeRiT repair verification using in-die phase metrology Phame, 747016 (27 May 2009); doi: 10.1117/12.835205
Proc. SPIE 7470, Design verification for sub-70-nm DRAM nodes via metal fix using E-beam direct write, 747017 (27 May 2009); doi: 10.1117/12.835206
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