PROCEEDINGS VOLUME 7518
PHOTONICS AND OPTOELECTRONICS MEETINGS 2009 | 8-10 AUGUST 2009
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
PHOTONICS AND OPTOELECTRONICS MEETINGS 2009
8-10 August 2009
Wuhan, China
Front Matter
Proc. SPIE 7518, Front Matter: Volume 7518, 751801 (29 October 2009); doi: 10.1117/12.852305
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Proc. SPIE 7518, AlGaN-based material characterizations and recent development of related solar-blind ultraviolet detectors, 751802 (13 October 2009); doi: 10.1117/12.843646
Proc. SPIE 7518, Bright and color-saturated quantum dot light-emitting diodes: new star for next generation displays and solid state lighting, 751803 (13 October 2009); doi: 10.1117/12.843089
Proc. SPIE 7518, Cadmium sulfide quantum dots grown by chemical bath deposition for sensitized solar cell applications, 751804 (13 October 2009); doi: 10.1117/12.840612
Proc. SPIE 7518, Centrotherm's high end CIGS thin film turnkey solution, 751805 (13 October 2009); doi: 10.1117/12.846080
Proc. SPIE 7518, Density functional study of neutral and charged titanium dioxide clusters, 751806 (13 October 2009); doi: 10.1117/12.845236
Proc. SPIE 7518, Design and analysis of solar energy photovoltaic system, 751807 (13 October 2009); doi: 10.1117/12.841127
Proc. SPIE 7518, Effects of substrate temperature on properties of the aluminum-doped zinc oxide thin films deposited by RF magnetron sputtering, 751808 (13 October 2009); doi: 10.1117/12.843507
Proc. SPIE 7518, Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD, 751809 (13 October 2009); doi: 10.1117/12.846970
Proc. SPIE 7518, Efficiency enhancement of GaN-based LED using nanotechnology, 75180A (13 October 2009); doi: 10.1117/12.843671
Proc. SPIE 7518, Electrochemical study on the TiO2 porous electrodes for metal-free dye-sensitized solar cells, 75180B (13 October 2009); doi: 10.1117/12.840614
Proc. SPIE 7518, Field-emission SEM characterization of novel ZnO thin films grown by magnetron sputtering on the different substrates, 75180C (13 October 2009); doi: 10.1117/12.843429
Proc. SPIE 7518, First-principles calculations of crystal structure of AgxZn1-xO alloys, 75180D (13 October 2009); doi: 10.1117/12.843219
Proc. SPIE 7518, First-principles study on distribution of Ag in ZnO, 75180E (13 October 2009); doi: 10.1117/12.843209
Proc. SPIE 7518, GaP single crystal layers grown on GaN by MOCVD, 75180F (13 October 2009); doi: 10.1117/12.840796
Proc. SPIE 7518, High-resolution x-ray diffraction studies of highly curved GaN layers prepared by hydride vapor phase epitaxy, 75180G (13 October 2009); doi: 10.1117/12.843108
Proc. SPIE 7518, ICP etching of high Al mole fraction AlGaN, 75180H (13 October 2009); doi: 10.1117/12.841195
Proc. SPIE 7518, Improved performance of organic light emitting devices using triazole/ Cs2CO3/Al cathode, 75180I (13 October 2009); doi: 10.1117/12.843547
Proc. SPIE 7518, Influence of alumina coating on transport and recombination in DSSCs with 1-methylbenzidazole as electrolyte additives, 75180J (13 October 2009); doi: 10.1117/12.843448
Proc. SPIE 7518, Influence of different parameter profiles on the formation of aluminum back surface field (Al-BSF) using for HIT solar cell, 75180K (13 October 2009); doi: 10.1117/12.840584
Proc. SPIE 7518, Influence of the base layer thickness and the graded buffer layer thickness on the conversion efficiency of a metamorphic triple-junction solar cell, 75180L (13 October 2009); doi: 10.1117/12.845428
Proc. SPIE 7518, Investigation of photoelectrochemical etching of textured silicon in solar cells, 75180M (13 October 2009); doi: 10.1117/12.840483
Proc. SPIE 7518, Junction temperature measurement on light-emitting diodes and its application, 75180N (13 October 2009); doi: 10.1117/12.845455
Proc. SPIE 7518, Minority carrier mobility measurement in HgCdTe with light-modulated Hall effect, 75180O (13 October 2009); doi: 10.1117/12.843162
Proc. SPIE 7518, Novel materials for high-efficiency solar cells, 75180P (13 October 2009); doi: 10.1117/12.845456
Proc. SPIE 7518, Numerical simulation study of a distributed fiber-optic lighting system, 75180Q (13 October 2009); doi: 10.1117/12.841755
Proc. SPIE 7518, Optical properties of BiFeO3 films grown by Sol-gel method, 75180R (13 October 2009); doi: 10.1117/12.840334
Proc. SPIE 7518, Preparation and photoelectric properties of Fe-doped mesoporous TiO2 thick films used in DSSC, 75180S (13 October 2009); doi: 10.1117/12.843483
Proc. SPIE 7518, Preparation and photoelectric properties of mesoporous ZnO/TiO2 composite films for DSSC, 75180T (13 October 2009); doi: 10.1117/12.843356
Proc. SPIE 7518, Preparation of BST ferroelectric thin films by pulsed laser deposition for infrared sensor, 75180U (13 October 2009); doi: 10.1117/12.840396
Proc. SPIE 7518, Removal and passivation of surface defects in perforated GaN-based light-emitting diodes, 75180V (13 October 2009); doi: 10.1117/12.841361
Proc. SPIE 7518, Research on light capture of solar cell and its application, 75180W (13 October 2009); doi: 10.1117/12.841123
Proc. SPIE 7518, Research on transparent conductive AZO film fabricated by PECVD method, 75180X (13 October 2009); doi: 10.1117/12.839857
Proc. SPIE 7518, Structural and optical properties of Bi2VO5.5 thin films deposited on silicon substrates, 75180Y (13 October 2009); doi: 10.1117/12.843213
Proc. SPIE 7518, Structure and electrical properties of [0001] GaN nanowires, 75180Z (13 October 2009); doi: 10.1117/12.842319
Proc. SPIE 7518, Study on performance of p-Si thin film fabricated by aluminum induced lateral crystallization at low temperature, 751810 (13 October 2009); doi: 10.1117/12.841228
Proc. SPIE 7518, The design of back surface field layer for a single GaAs solar cell, 751811 (13 October 2009); doi: 10.1117/12.845420
Proc. SPIE 7518, The electrical and optical properties of doped BTO thin films, 751812 (13 October 2009); doi: 10.1117/12.841596
Proc. SPIE 7518, The evaluation and measurement of AlGaN epitaxial layer with high Al mole fraction, 751813 (13 October 2009); doi: 10.1117/12.840465
Proc. SPIE 7518, The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method, 751814 (13 October 2009); doi: 10.1117/12.845422
Proc. SPIE 7518, The optical properties of rare-earth multi-ferroelectric thin-film LuFeO3 and LuFe1-xMnxO3 fabricated with sol-gel method, 751815 (13 October 2009); doi: 10.1117/12.843624
Proc. SPIE 7518, Theoretical investigation of three dimensional p-n junctions for improvement of silicon solar cell efficiency, 751816 (13 October 2009); doi: 10.1117/12.840013
Proc. SPIE 7518, Visible luminescence from Dy3+ doped tellurite glasses, 751817 (13 October 2009); doi: 10.1117/12.843489
Proc. SPIE 7518, Wet chemical etching of Al0.65Ga0.35N in aqueous KOH solutions, 751818 (13 October 2009); doi: 10.1117/12.843644
Proc. SPIE 7518, Synthesis and characterization of two kind of deep blue emission organic small molecular materials, 751819 (22 October 2009); doi: 10.1117/12.845423
Proc. SPIE 7518, AIN based diluted magnetic semiconductors from first-principles study, 75181A (13 October 2009); doi: 10.1117/12.841455
Proc. SPIE 7518, Electronic structure and the optical properties of GaN (0001) surface from first-principles study, 75181B (13 October 2009); doi: 10.1117/12.841130
Proc. SPIE 7518, Numerical modeling of thermionic electrons in abrupt isotype heterojunction for the light emitting transistor, 75181C (13 October 2009); doi: 10.1117/12.841121
Proc. SPIE 7518, Simulation and analysis of GaN-based light-emitting diodes with diamond shaped, 75181D (13 October 2009); doi: 10.1117/12.843471
Proc. SPIE 7518, Theoretical study on optimization of high efficiency GaInP/GaInAs/Ge tandem solar cells, 75181E (13 October 2009); doi: 10.1117/12.837568
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