Front Matter
Proc. SPIE 7520, Front Matter: Volume 7520, 752001 (31 December 2009); doi: 10.1117/12.855716
Plenary Session
Proc. SPIE 7520, 3D integration opportunities, issues, and solutions: a designer's perspective, 752003 (8 December 2009); doi: 10.1117/12.845747
Proc. SPIE 7520, Decades of rivalry and complementary of photon and electron beams, 752004 (14 December 2009); doi: 10.1117/12.845745
EUV Lithography and Emergent Technology I
Proc. SPIE 7520, High power LPP EUV source system development status, 752007 (10 December 2009); doi: 10.1117/12.839488
Proc. SPIE 7520, Imaging performance of production-worthy multiple-E-beam maskless lithography, 752009 (12 December 2009); doi: 10.1117/12.838573
Proc. SPIE 7520, Advances in maskless and mask-based optical lithography on plastic flexible substrates, 75200A (10 December 2009); doi: 10.1117/12.837171
Computational Litho: SMO
Proc. SPIE 7520, Source-mask selection using computational lithography: further investigation incorporating rigorous resist models, 75200B (10 December 2009); doi: 10.1117/12.837201
Proc. SPIE 7520, Feasibility studies of source and mask optimization, 75200C (10 December 2009); doi: 10.1117/12.837161
Proc. SPIE 7520, Source-mask co-optimization: optimize design for imaging and impact of source complexity on lithography performance, 75200D (10 December 2009); doi: 10.1117/12.838701
Proc. SPIE 7520, Regularization of inverse photomask synthesis to enhance manufacturability, 75200E (11 December 2009); doi: 10.1117/12.837512
Metrology and Process Control I
Proc. SPIE 7520, The LER/LWR metrology challenge for advance process control through 3D-AFM and CD-SEM, 75200F (10 December 2009); doi: 10.1117/12.837311
Proc. SPIE 7520, Optimization of alignment/overlay sampling and marker layout to improve overlay performance for double patterning technology, 75200G (11 December 2009); doi: 10.1117/12.837137
Proc. SPIE 7520, Optical critical dimension measurements for patterned media with 10's nm feature size, 75200H (11 December 2009); doi: 10.1117/12.839523
Proc. SPIE 7520, Ultra-sensitive optical metrology for hard disk DTR and BPM imprints, 75200I (11 December 2009); doi: 10.1117/12.837146
Proc. SPIE 7520, After development inspection (ADI) studies of photo resist defectivity of an advanced memory device, 75200J (11 December 2009); doi: 10.1117/12.837103
Proc. SPIE 7520, Challenges in development and construction of stand-alone inspection, metrology, and calibration tools for EUV lithographic applications, 75200K (14 December 2009); doi: 10.1117/12.837086
Resist Material and Processing I
Proc. SPIE 7520, Image reversal trilayer materials and processing, 75200L (11 December 2009); doi: 10.1117/12.837017
Proc. SPIE 7520, Resist double patterning on BARCs and spin-on multilayer materials, 75200M (11 December 2009); doi: 10.1117/12.840419
Proc. SPIE 7520, Latest developments in photosensitive developable bottom anti-reflective coating (DBARC), 75200N (11 December 2009); doi: 10.1117/12.837050
Proc. SPIE 7520, High Si content anti-reflective coatings and their extension to a UV freeze dual patterning process, 75200O (11 December 2009); doi: 10.1117/12.837205
EUV Lithography and Emergent Technology II
Proc. SPIE 7520, EUV sensitive photo-acid generator sans chromophore, 75200R (11 December 2009); doi: 10.1117/12.837341
Proc. SPIE 7520, A fully model-based methodology for simultaneously correcting EUV mask shadowing and optical proximity effects with improved pattern transfer fidelity and process windows, 75200S (11 December 2009); doi: 10.1117/12.837077
Proc. SPIE 7520, Comparison of simulation and wafer results for shadowing and flare effect on EUV alpha demo tool, 75200T (11 December 2009); doi: 10.1117/12.837136
Computational Litho
Proc. SPIE 7520, Development and evaluation of new MRC parameter for aggressive mask optimization, 75200U (11 December 2009); doi: 10.1117/12.839398
Proc. SPIE 7520, Fast converging inverse lithography algorithm incorporating image gradient descent methods, 75200V (12 December 2009); doi: 10.1117/12.837514
Proc. SPIE 7520, Using transmission line theory to calculate equivalent refractive index of EUV mask multilayer structures for efficient scattering simulation by finite-difference time-domain method, 75200W (12 December 2009); doi: 10.1117/12.837150
Proc. SPIE 7520, Source mask optimization (SMO) at full chip scale using inverse lithography technology (ILT) based on level set methods, 75200X (12 December 2009); doi: 10.1117/12.843578
Optical Lithography and Extension
Proc. SPIE 7520, Performance of a programmable illuminator for generation of freeform sources on high NA immersion systems, 75200Y (11 December 2009); doi: 10.1117/12.837035
Proc. SPIE 7520, Latest results from the Nikon NSR-S620 double patterning immersion scanner, 75200Z (11 December 2009); doi: 10.1117/12.837037
Proc. SPIE 7520, Comparison of rule-based versus model-based decomposition technique, 752011 (14 December 2009); doi: 10.1117/12.837204
Proc. SPIE 7520, Mueller matrix polarimetry for immersion lithography tools with a polarization monitoring system at the wafer plane, 752012 (11 December 2009); doi: 10.1117/12.837031
Proc. SPIE 7520, Flexible 60-90W ArF light source for double patterning immersion lithography in high volume manufacturing, 752013 (11 December 2009); doi: 10.1117/12.839803
Optical Lithography: Mask
Proc. SPIE 7520, Mask defect specification in the spacer patterning process by using a fail-bit-map analysis, 752014 (11 December 2009); doi: 10.1117/12.837132
Proc. SPIE 7520, Analyzing electrostatic induced damage risk to reticles with an in situ e-reticle system, 752015 (11 December 2009); doi: 10.1117/12.837039
Proc. SPIE 7520, In-die actinic metrology on photomasks for low k1 lithography, 752016 (11 December 2009); doi: 10.1117/12.839973
Proc. SPIE 7520, Revisiting adoption of high transmission PSM: pros, cons and path forward, 752017 (11 December 2009); doi: 10.1117/12.838246
Proc. SPIE 7520, Back side photomask haze revisited, 752018 (11 December 2009); doi: 10.1117/12.840273
Metrology and Process Control II
Proc. SPIE 7520, In-shot (intra-field) overlay measurement considering overlay mark pattern dependency and illumination source dependency, 752019 (11 December 2009); doi: 10.1117/12.839675
Proc. SPIE 7520, A sophisticated metrology solution for advanced lithography: addressing the most stringent needs of today as well as future lithography, 75201A (11 December 2009); doi: 10.1117/12.837353
Proc. SPIE 7520, Scatterometry measurement of asymmetric gratings, 75201B (11 December 2009); doi: 10.1117/12.839821
Proc. SPIE 7520, Systematic defect management by design aware inspection, 75201C (11 December 2009); doi: 10.1117/12.836993
Proc. SPIE 7520, EUV mask pattern inspection with an advanced electron beam inspection system, 75201D (11 December 2009); doi: 10.1117/12.837025
Double Patterning and Double Processing
Proc. SPIE 7520, Implementation of double patterning process toward 22-nm node, 75201E (11 December 2009); doi: 10.1117/12.839826
Proc. SPIE 7520, Development of silicon glass for etch reverse layer (SiGERL) materials and BARCs for double patterning process, 75201F (11 December 2009); doi: 10.1117/12.837157
Proc. SPIE 7520, Advanced patterning solutions based on double exposure: double patterning and beyond, 75201G (11 December 2009); doi: 10.1117/12.840461
Proc. SPIE 7520, Litho-freeze-litho-etch (LFLE) enabling dual wafer flow coat/develop process and freeze CD tuning bake for >200wph immersion ArF photolithography double patterning, 75201H (11 December 2009); doi: 10.1117/12.837221
Resist Material and Processing II
Proc. SPIE 7520, Low temperature plasma-enhanced ALD enables cost-effective spacer defined double patterning (SDDP), 75201J (12 December 2009); doi: 10.1117/12.836979
Proc. SPIE 7520, Filtration condition study for enhanced microbridge reduction, 75201K (12 December 2009); doi: 10.1117/12.837664
Proc. SPIE 7520, Possible line edge roughness reduction by anisotropic molecular resist, 75201L (12 December 2009); doi: 10.1117/12.837234
Proc. SPIE 7520, A proven methodology for detecting photo-resist residue and for qualifying photo-resist material by measuring fluorescence using SP2 bare wafer inspection and SURFmonitor, 75201M (12 December 2009); doi: 10.1117/12.837020
Computational Litho II
Proc. SPIE 7520, Validation of the predictive power of a calibrated physical stochastic resist model, 75201N (12 December 2009); doi: 10.1117/12.836901
Proc. SPIE 7520, Hierarchical DPT mask planning for contact layer, 75201O (12 December 2009); doi: 10.1117/12.837214
Proc. SPIE 7520, Pattern prediction in EUV resists, 75201P (11 December 2009); doi: 10.1117/12.836910
Proc. SPIE 7520, Model-based scanner tuning for process optimization, 75201Q (12 December 2009); doi: 10.1117/12.842551
Poster Session
Proc. SPIE 7520, The synthesis and imaging study of a series of novel photoactive polymers with diazoketo groups in their side chains, 75201R (11 December 2009); doi: 10.1117/12.839549