PROCEEDINGS VOLUME 7521
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2009 | 5-9 OCTOBER 2009
International Conference on Micro- and Nano-Electronics 2009
INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2009
5-9 October 2009
Zvenigorod, Russian Federation
Front Matter
Proc. SPIE 7521, Front Matter for volume 7521, 752101 (5 March 2010); doi: 10.1117/12.855024
Advanced Lithography
Proc. SPIE 7521, Immersion lithography and double patterning in advanced microelectronics, 752102 (26 February 2010); doi: 10.1117/12.854658
Proc. SPIE 7521, Projection photolithography modeling using the finite-difference time-domain approach, 752103 (26 February 2010); doi: 10.1117/12.853420
Proc. SPIE 7521, Manufacturing of diffraction-quality optical elements for high-resolution optical systems, 752104 (26 February 2010); doi: 10.1117/12.854325
Proc. SPIE 7521, Influence of annealing on the structural and optical properties of thin multilayer EUV filters containing Zr, Mo, and silicides of these metals, 752105 (26 February 2010); doi: 10.1117/12.854728
Plasma Physics and Processing
Proc. SPIE 7521, The metal hard-mask approach for contact patterning, 752106 (26 February 2010); doi: 10.1117/12.854680
Proc. SPIE 7521, Impact of plasma exposure on organic low-k materials, 752107 (26 February 2010); doi: 10.1117/12.854882
Proc. SPIE 7521, Plasma parameters and active particles kinetics in HBr dc glow discharges, 752108 (26 February 2010); doi: 10.1117/12.853343
Proc. SPIE 7521, Excitation mechanism of the B+ emission line at 345.1 nm in low-temperature plasmas, 752109 (26 February 2010); doi: 10.1117/12.853289
Proc. SPIE 7521, Application of Langmuir probe technique in depositing plasmas for monitoring of etch process robustness and for end-point detection, 75210A (26 February 2010); doi: 10.1117/12.853840
Proc. SPIE 7521, Optimization of parameters of process deep plasmachemical etching of silicon for elements MEMS, 75210B (26 February 2010); doi: 10.1117/12.853837
Structures for Photonics and Optoelectronics
Proc. SPIE 7521, Defect-related luminescence from nanostructured Si layers in the 1.5-1.6 μm wavelength region, 75210C (26 February 2010); doi: 10.1117/12.853670
Proc. SPIE 7521, Improvement of radiation resistance of multijunction solar cells by application of Bragg reflectors, 75210D (26 February 2010); doi: 10.1117/12.853750
Proc. SPIE 7521, Laser generation in broken-gap heterostructures, 75210E (26 February 2010); doi: 10.1117/12.853906
Proc. SPIE 7521, Noise suppression in three-level atomic system driven by quantized field, 75210F (26 February 2010); doi: 10.1117/12.854051
Proc. SPIE 7521, Numerical methods for calculation of optical properties of layered structures, 75210G (26 February 2010); doi: 10.1117/12.862566
Thin Films
Proc. SPIE 7521, The thickness-dependence of the polariton effect in the single quantum well, 75210H (26 February 2010); doi: 10.1117/12.853554
Proc. SPIE 7521, Low-resistance Ge/Au/Ni/Ti/Au-based ohmic contact to n-GaAs, 75210I (26 February 2010); doi: 10.1117/12.853581
Proc. SPIE 7521, Hf-based barrier layers for Cu-metallization, 75210J (26 February 2010); doi: 10.1117/12.854340
Proc. SPIE 7521, Formation of Ge/Cu ohmic contacts to n-GaAs with atomic hydrogen pre-annealing step, 75210K (26 February 2010); doi: 10.1117/12.853639
Proc. SPIE 7521, CoSi[sub]2[/sub]/TiO[sub]2[/sub]/SiO[sub]2[/sub]/Si gate structure formation, 75210L (26 February 2010); doi: 10.1117/12.854302
Superconducting and Magnetic Structures
Proc. SPIE 7521, Theoretical analysis of the new microwave detector based on a Josephson heterostructure, 75210M (26 February 2010); doi: 10.1117/12.854393
Proc. SPIE 7521, Theoretical analysis of electronic thermal properties of the interfaces between multiband superconductors and a normal metal, 75210N (26 February 2010); doi: 10.1117/12.854521
Proc. SPIE 7521, Superconductivity of polymers with charge injection doping, 75210O (26 February 2010); doi: 10.1117/12.854650
Proc. SPIE 7521, High-temperature magnetization and Mössbauer spectra of nanoparticles in a weak magnetic field, 75210P (26 February 2010); doi: 10.1117/12.854226
Proc. SPIE 7521, Mossbauer study of nanomagnetics, 75210Q (26 February 2010); doi: 10.1117/12.854768
Proc. SPIE 7521, A new antiferromagnetic nanocomposite GdNiO3, 75210R (26 February 2010); doi: 10.1117/12.854579
Physics of Nanostructures
Proc. SPIE 7521, Calculation of electrophysical parameters of thin undoped GaAs-in-Al2O3 quantum nanowires and single-wall armchair carbon nanotubes, 75210S (26 February 2010); doi: 10.1117/12.853655
Proc. SPIE 7521, Calculation of the characteristics of electron transport through molecular clusters, 75210U (26 February 2010); doi: 10.1117/12.854036
Proc. SPIE 7521, Determination of electronic properties of molecular objects on the basis of nanodevices' transport characteristics, 75210V (26 February 2010); doi: 10.1117/12.854688
Proc. SPIE 7521, Electron optical spin polarization in broken-gap heterostructures, 75210W (26 February 2010); doi: 10.1117/12.853748
Nanostructures Fabrication Techniques
Proc. SPIE 7521, Femtosecond and nanosecond laser assistant formation of Si nanoclusters in silicon-rich nitride films, 75210X (26 February 2010); doi: 10.1117/12.853385
Proc. SPIE 7521, Formation of carbonic nanostructures using PECVD and glow-discharge plasma at direct current, 75210Y (26 February 2010); doi: 10.1117/12.854748
Proc. SPIE 7521, Carbon nanostructures' catalytic growth from carbonaceous substrates in comparison with PECCVD method, 75210Z (26 February 2010); doi: 10.1117/12.855453
Proc. SPIE 7521, Preparation of electrodes for molecular transistor by focused ion beam, 752110 (26 February 2010); doi: 10.1117/12.854016
Proc. SPIE 7521, Si wires growth by using of magnetron sputtering method, 752111 (26 February 2010); doi: 10.1117/12.854206
Proc. SPIE 7521, Formation of molecular transistor electrodes by electromigration, 752112 (26 February 2010); doi: 10.1117/12.854681
Proc. SPIE 7521, Formation of the atomically smooth surface of gold film and binding of gold nano-particles on it by self-assembly method, 752113 (26 February 2010); doi: 10.1117/12.855194
Micro- and Nanostructures Characterization
Proc. SPIE 7521, Investigations of nanostructured porous PbTe films with x-ray diffractometry and reflectometry, 752114 (26 February 2010); doi: 10.1117/12.853728
Proc. SPIE 7521, Experimental scheme for observation of anomalous Kossel effect in semiconductor crystals, 752115 (26 February 2010); doi: 10.1117/12.854221
Proc. SPIE 7521, SEM probe defocusing method of measurement of linear sizes of nanorelief elements, 752116 (26 February 2010); doi: 10.1117/12.854696
Devices and ICs
Proc. SPIE 7521, Electromigration theory and its applications to integrated circuit metallization, 752117 (26 February 2010); doi: 10.1117/12.853391
Proc. SPIE 7521, Methods of cache memory optimization for multimedia applications, 752118 (26 February 2010); doi: 10.1117/12.853709
Proc. SPIE 7521, Principal problems of quality improvement for high-speed planar transmission lines issued from studies of high-Q microstrip resonators, 752119 (27 February 2010); doi: 10.1117/12.854461
Simulation and Modeling
Proc. SPIE 7521, Advanced atomic-scale simulation of silicon nitride CVD from dichlorosilane and ammonia, 75211A (26 February 2010); doi: 10.1117/12.853400
Proc. SPIE 7521, Thermodynamic theory of interfacial adhesion between materials containing point defects, 75211B (26 February 2010); doi: 10.1117/12.853428
Proc. SPIE 7521, Modeling of the interfacial separation work in relation to impurity concentration in adjoining materials, 75211C (26 February 2010); doi: 10.1117/12.853475
Proc. SPIE 7521, Optimization of near-surficial annealing for decreasing of depth of p-n-junction in semiconductor heterostructure, 75211D (26 February 2010); doi: 10.1117/12.853230
Proc. SPIE 7521, A nanoelectronic device simulation software system NANODEV: new opportunities, 75211E (26 February 2010); doi: 10.1117/12.853521
Proc. SPIE 7521, Radiation-hardening-by-design with circuit-level modeling of total ionizing dose effects in modern CMOS technologies, 75211F (26 February 2010); doi: 10.1117/12.853580
Proc. SPIE 7521, Simulation results for three neutralization channel designs of a fast neutral beam source, 75211G (26 February 2010); doi: 10.1117/12.853774
Proc. SPIE 7521, Intrinsic compact MOSFET model with correct account of positive differential conductance after saturation, 75211H (26 February 2010); doi: 10.1117/12.853740
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