Proceedings Volume 7597 is from: Logo
SPIE OPTO
23-28 January 2010
San Francisco, California, United States
Front Matter
Proc. SPIE 7597, Front Matter: Volume 7597, 759701 (30 March 2010); doi: 10.1117/12.862541
Photovoltaic Devices I
Proc. SPIE 7597, Microscopic theory and numerical simulation of quantum well solar cells, 759702 (16 February 2010); doi: 10.1117/12.845478
Proc. SPIE 7597, Zonal efficiency limit calculation for nanostructured solar cells, 759704 (26 February 2010); doi: 10.1117/12.841356
Proc. SPIE 7597, Higher limiting efficiencies for nanostructured solar cells, 759705 (26 February 2010); doi: 10.1117/12.844114
Proc. SPIE 7597, FDTD simulation of metallic gratings for enhancement of electromagnetic field by surface plasmon resonance, 759706 (26 February 2010); doi: 10.1117/12.842590
Photovoltaic Devices II
Proc. SPIE 7597, Analysis of changes in efficiency by simulating dye-sensitized solar cells varying the characteristics of TiO2, 75970A (26 February 2010); doi: 10.1117/12.840652
Light Emitting Diodes
Proc. SPIE 7597, Simulation and design of core-shell GaN nanowire LEDs, 75970B (26 February 2010); doi: 10.1117/12.842621
Proc. SPIE 7597, Modeling of AlN/GaN superlattices for integration in near-UV distributed Bragg reflectors, 75970C (26 February 2010); doi: 10.1117/12.842074
Proc. SPIE 7597, Optoelectronic and transport properties of nanocolumnar InGaN/GaN quantum disk LEDs, 75970D (26 February 2010); doi: 10.1117/12.840533
Proc. SPIE 7597, Role of the electron blocking layer in the current transport of efficient III-N light-emitting diodes, 75970E (26 February 2010); doi: 10.1117/12.839406
Heterostructures and Novel Materials
Proc. SPIE 7597, Properties of mid-IR diodes with n-InAsSbP/n-InAs interface, 75970G (26 February 2010); doi: 10.1117/12.841625
Proc. SPIE 7597, Band structure calculation of dilute-As GaNAs by first principle, 75970H (26 February 2010); doi: 10.1117/12.842931
Dynamics and Nonlinearities I
Proc. SPIE 7597, Physical-random number generation using laser diodes' inherent noises, 75970M (26 February 2010); doi: 10.1117/12.840626
Proc. SPIE 7597, Complex low energy gain switching pulse processing using a highly nonlinear optical loop mirror, 75970N (26 February 2010); doi: 10.1117/12.848545
Surface Emitting Lasers
Proc. SPIE 7597, Quantum design and experimental realization of high-power VECSELs, 75970O (26 February 2010); doi: 10.1117/12.840489
Proc. SPIE 7597, Ultrafast circular polarization oscillations in spin-polarized vertical-cavity surface-emitting laser devices, 75970Q (26 February 2010); doi: 10.1117/12.841606
Passive Optics Modeling
Proc. SPIE 7597, Micro diffraction lenses with subwavelength structures designed by the genetic algorithm, 75970S (26 February 2010); doi: 10.1117/12.837449
Proc. SPIE 7597, Study of propagation modes of bent waveguides and micro-ring resonators by means of the aperiodic Fourier modal method, 75970U (26 February 2010); doi: 10.1117/12.840686
Proc. SPIE 7597, Synthesis of titanium indiffused LiNbO3 waveguides with desired modal fields, 75970W (14 April 2010); doi: 10.1117/12.843278
Detectors, Modulators and Amplifiers
Proc. SPIE 7597, Thermal crosstalk reduction in IR thermo-electric photodetectors by lock-in method: 4D numerical simulations and experimental verification, 75970Y (26 February 2010); doi: 10.1117/12.841556
Proc. SPIE 7597, Ultrafast compact silicon-based ring resonator modulators using metal-insulator switching of vanadium dioxide, 759710 (26 February 2010); doi: 10.1117/12.843866
Proc. SPIE 7597, Evanescent wave modulator for medium infrared wavelengths (8-12 µm), 759711 (26 February 2010); doi: 10.1117/12.841657
Random Semiconductor Lasers
Proc. SPIE 7597, Random lasing in nanocrystalline ZnO powders, 759712 (26 February 2010); doi: 10.1117/12.847329
Proc. SPIE 7597, Control random laser modes by local pumping, 759713 (26 February 2010); doi: 10.1117/12.847632
Quantum Dot Lasers
Proc. SPIE 7597, Radiative efficiency of MOCVD grown QD lasers, 759716 (26 February 2010); doi: 10.1117/12.840970
Proc. SPIE 7597, Inhomogeneous quantum dot gain medium for improved spatial coherence in wide-aperture semiconductor lasers, 759717 (26 February 2010); doi: 10.1117/12.840661
Proc. SPIE 7597, Bandwidth enhancement in an injection-locked quantum dot laser operating at 1.31-μm, 759719 (26 February 2010); doi: 10.1117/12.842284
Laser Mode Stabilization and Noise
Proc. SPIE 7597, Modeling of photonic-crystal-based high-power high-brightness semiconductor lasers, 75971A (26 February 2010); doi: 10.1117/12.847040
Proc. SPIE 7597, Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity, 75971B (26 February 2010); doi: 10.1117/12.839445
Proc. SPIE 7597, Semiconductor laser oscillation-frequency stabilization using the Faraday effect, 75971D (26 February 2010); doi: 10.1117/12.841526
Proc. SPIE 7597, Accurate source simulation in modern optical modeling and analysis software, 75971E (26 February 2010); doi: 10.1117/12.842568
Edge Emitting Light Sources
Proc. SPIE 7597, Optical components for very short reach applications at 40 Gb/s and beyond, 75971F (26 February 2010); doi: 10.1117/12.847330
Proc. SPIE 7597, Simulation of facet heating in high-power red lasers, 75971G (26 February 2010); doi: 10.1117/12.841970
Proc. SPIE 7597, Saturation characteristics of InGaAsP-InP bulk SOA, 75971I (26 February 2010); doi: 10.1117/12.842350
Proc. SPIE 7597, Vertically stacked InAs quantum dots for polarization-independent semiconductor optical amplifiers, 75971J (26 February 2010); doi: 10.1117/12.847644
Proc. SPIE 7597, Electron-photon and electron-LO phonon intersubband scattering rates in GaN/AlN quantum wells, 75971K (26 February 2010); doi: 10.1117/12.843054
Dynamics and Nonlinearities II
Proc. SPIE 7597, Experimental stability maps of a 1550nm-VCSEL subject to polarized optical injection, 75971L (26 February 2010); doi: 10.1117/12.842019
Proc. SPIE 7597, Experimental observation of the locking regimes and chaotic dynamics in laterally coupled diode lasers, 75971M (26 February 2010); doi: 10.1117/12.848544
Proc. SPIE 7597, Frequency stabilization of a laser diode using Rb saturated absorption lines, 75971N (26 February 2010); doi: 10.1117/12.840610
Proc. SPIE 7597, Locking of three coupled lasers, 75971O (26 February 2010); doi: 10.1117/12.842331
Quantum Dots and Microcavities
Proc. SPIE 7597, Theory of few photon dynamics in electrically pumped light emitting quantum dot devices, 75971P (26 February 2010); doi: 10.1117/12.842158
Proc. SPIE 7597, Polarization conservation and dephasing in InAs quantum dot ensembles, 75971R (26 February 2010); doi: 10.1117/12.841589
Proc. SPIE 7597, Multiscale thermal modeling of GaN/AlGaN quantum dot LEDs, 75971S (26 February 2010); doi: 10.1117/12.842645
Poster Session
Proc. SPIE 7597, Blue-emitting ZnSe random laser, 75971T (26 February 2010); doi: 10.1117/12.847278
Proc. SPIE 7597, All optical logic gates using active plasmonic device block, 75971U (26 February 2010); doi: 10.1117/12.841595
Proc. SPIE 7597, Formulation of differential transfer matrix method in cylindrical geometry, 75971V (26 February 2010); doi: 10.1117/12.841537
Proc. SPIE 7597, Passive fiber rings as a basic part of fiber optic sensors, 75971W (26 February 2010); doi: 10.1117/12.837815
Proc. SPIE 7597, Propagation of light in Schwarzschild geometry, 75971Y (26 February 2010); doi: 10.1117/12.840470
Proc. SPIE 7597, Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes, 759720 (26 February 2010); doi: 10.1117/12.841266
Proc. SPIE 7597, Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells, 759721 (26 February 2010); doi: 10.1117/12.841270
Proc. SPIE 7597, Study on temperature characteristic of green photodetector on Si substrate, 759722 (26 February 2010); doi: 10.1117/12.841621
Proc. SPIE 7597, Modeling and simulation of AlGaAs/GaAs QW DBR silicon dual junction photovoltaic devices, 759723 (26 February 2010); doi: 10.1117/12.842719
Proc. SPIE 7597, Precise frequency stabilization technique for 850nm vertical cavity surface emitting lasers by controlling their optical beat frequency, 759724 (26 February 2010); doi: 10.1117/12.842770
Proc. SPIE 7597, Linewidth reduction of a 30mW-405nm GaN violet laser diode by optical-electrical double feedback method, 759725 (26 February 2010); doi: 10.1117/12.843006
Proc. SPIE 7597, Study of beam propagation in finite photonic crystals, 759728 (26 February 2010); doi: 10.1117/12.845466
Proc. SPIE 7597, VCSEL's frequency stabilization of an external cavity diode laser: countermeasures against atmospheric temperature variations, 75972A (26 February 2010); doi: 10.1117/12.840609
Proc. SPIE 7597, Analysis and characterization of the small-signal modulation of a vertical external cavity surface emitting laser, 75972B (26 February 2010); doi: 10.1117/12.852283
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