PROCEEDINGS VOLUME 7602
SPIE OPTO | 23-28 JANUARY 2010
Gallium Nitride Materials and Devices V
IN THIS VOLUME

0 Sessions, 45 Papers, 0 Presentations
Front Matter  (1)
Growth I  (2)
Growth II  (2)
Growth III  (4)
FETs  (3)
QW and Dots  (1)
Lasers  (4)
LEDs I  (3)
LEDs II  (4)
LEDs III  (1)
Proceedings Volume 7602 is from: Logo
SPIE OPTO
23-28 January 2010
San Francisco, California, United States
Front Matter
Proc. SPIE 7602, Front Matter: Volume 7602, 760201 (30 March 2010); doi: 10.1117/12.862473
Growth I
Proc. SPIE 7602, Growth of self-standing GaN substrates, 760202 (11 March 2010); doi: 10.1117/12.836337
Proc. SPIE 7602, Selective growth and impurity incorporation in semipolar GaN grown on Si substrate, 760203 (11 March 2010); doi: 10.1117/12.840460
Growth II
Proc. SPIE 7602, Molecular beam epitaxial growth, fabrication, and characterization of InN/Si nanowire heterojunction solar cells, 76020A (12 March 2010); doi: 10.1117/12.843258
Proc. SPIE 7602, The comprehensive characteristics of quaternary AlInGaN with various TMI molar rate, 76020B (12 March 2010); doi: 10.1117/12.840824
Growth III
Proc. SPIE 7602, Ammonothermal growth of GaN substrates, 76020C (12 March 2010); doi: 10.1117/12.842539
Proc. SPIE 7602, Non-polar m-plane GaN film and polarized InGaN/GaN LED grown on LiAlO2 (001) substrates, 76020D (12 March 2010); doi: 10.1117/12.842753
Proc. SPIE 7602, Magnetic cages of GaN nanoclusters doped with Gd and Nd, 76020E (12 March 2010); doi: 10.1117/12.842449
Proc. SPIE 7602, Extended defects in semipolar (11-22) gallium nitride, 76020G (12 March 2010); doi: 10.1117/12.841680
FETs
Proc. SPIE 7602, Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels, 76020H (11 March 2010); doi: 10.1117/12.843659
Proc. SPIE 7602, InGaN light-emitting diodes with highly transparent ZnO:Ga electrodes, 76020I (17 March 2010); doi: 10.1117/12.853327
Proc. SPIE 7602, Transmission electron microscopy and XRD investigations of InAlN/GaN thin heterostructures for HEMT applications, 76020K (12 March 2010); doi: 10.1117/12.841605
FET Reliabilty
Proc. SPIE 7602, Quantum 1/f noise theory and experiment in QWIPs, 76020L (12 March 2010); doi: 10.1117/12.842919
Proc. SPIE 7602, 1/f noise: a window to HFET stability, 76020M (12 March 2010); doi: 10.1117/12.842948
Proc. SPIE 7602, Analytical calculation of the quantum 1/f coherence parameter for HFETs, 76020N (18 March 2010); doi: 10.1117/12.842972
Proc. SPIE 7602, Measurements of gate lag in high-quality nearly lattice matched InAlN/AlN/GaN HFET structures, 76020O (17 March 2010); doi: 10.1117/12.843700
Advanced Techniques I
Proc. SPIE 7602, Nano-ultrasonic based on GaN nano-layers, 76020Q (12 March 2010); doi: 10.1117/12.840826
Proc. SPIE 7602, Scanning near-field optical spectroscopy of AlGaN-based light emitting diodes, 76020T (11 March 2010); doi: 10.1117/12.840403
Proc. SPIE 7602, Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3ω method, 76020U (12 March 2010); doi: 10.1117/12.842509
Advanced Techniques II
Proc. SPIE 7602, Effect of UV exposure on the surface charge behavior for GaN, 76020Y (20 March 2010); doi: 10.1117/12.843864
Proc. SPIE 7602, Achieving p-InxGa1-xN alloys with high In contents, 76020Z (17 March 2010); doi: 10.1117/12.842313
QW and Dots
Proc. SPIE 7602, Extended defects in nitride layers, influence on the quantum wells and quantum dots, 760212 (18 March 2010); doi: 10.1117/12.842490
Lasers
Proc. SPIE 7602, The lasing characteristics of GaN-based two-dimensional photonic crystal surface-emitting lasers, 760215 (11 March 2010); doi: 10.1117/12.840487
Proc. SPIE 7602, GaN-based VCSELs: analysis of internal device physics and performance limitations, 760217 (11 March 2010); doi: 10.1117/12.840515
Proc. SPIE 7602, High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes, 760218 (11 March 2010); doi: 10.1117/12.840783
Proc. SPIE 7602, Performance improvement of InGaN-based laser diodes by epitaxial layer structure design, 760219 (18 March 2010); doi: 10.1117/12.842334
Novel Devices
Proc. SPIE 7602, Review of nitride infrared intersubband devices, 76021A (11 March 2010); doi: 10.1117/12.840934
Proc. SPIE 7602, First-principles simulation of GaN material and devices: an application to GaN APDs, 76021B (11 March 2010); doi: 10.1117/12.842088
Proc. SPIE 7602, Promising composite die-bonding materials for high-power GaN-based LED applications, 76021E (12 March 2010); doi: 10.1117/12.841097
LEDs I
Proc. SPIE 7602, Realization of high-efficiency AlGaN-based ultraviolet light emitters, 76021F (12 March 2010); doi: 10.1117/12.841550
Proc. SPIE 7602, Novel device concepts for high-efficiency InGaN-based light-emitting diodes, 76021G (12 March 2010); doi: 10.1117/12.842869
Proc. SPIE 7602, Role of interface roughness on lateral transport in InGaN/GaN LEDs: diffusion length, dislocation spacing, and radiative efficiency, 76021H (12 March 2010); doi: 10.1117/12.840424
LEDs II
Proc. SPIE 7602, Development of high-power UV LEDs for epoxy curing applications, 76021K (17 March 2010); doi: 10.1117/12.845472
Proc. SPIE 7602, Original GaN-based LED structure on ZnO template by MOCVD, 76021L (12 March 2010); doi: 10.1117/12.841336
Proc. SPIE 7602, Enhancement of light extraction efficiency of blue-light-emitting diodes by moth-eye structure, 76021M (12 March 2010); doi: 10.1117/12.841518
Proc. SPIE 7602, Internal quantum efficiency of m-plane InGaN on Si and GaN, 76021N (12 March 2010); doi: 10.1117/12.843727
LEDs III
Proc. SPIE 7602, Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes, 76021R (18 March 2010); doi: 10.1117/12.843752
Poster Session
Proc. SPIE 7602, Ab initio study of structural properties for zincblende AlInN: comparison of LDA and GGA, 76021W (12 March 2010); doi: 10.1117/12.840478
Proc. SPIE 7602, Output power enhancement of light-emitting diodes with defect passivation layer, 76021X (17 March 2010); doi: 10.1117/12.841513
Proc. SPIE 7602, Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition, 760220 (17 March 2010); doi: 10.1117/12.845652
Proc. SPIE 7602, Comparison of different template structures for high quality and self-separation thick GaN growth, 760221 (17 March 2010); doi: 10.1117/12.846513
Proc. SPIE 7602, Analytical methods to study loss mechanisms and lifetime investigations of blue InGaN laser diodes, 760222 (11 March 2010); doi: 10.1117/12.842130
Proc. SPIE 7602, Reduction in operating voltage of UV laser diode, 760223 (17 March 2010); doi: 10.1117/12.843910
Proc. SPIE 7602, On carrier spillover in c- and m-plane InGaN light-emitting diodes, 760224 (11 March 2010); doi: 10.1117/12.845806
Proc. SPIE 7602, Analysis and comparison of UV photodetectors based on wide bandgap semiconductors, 760225 (11 March 2010); doi: 10.1117/12.849460
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