PROCEEDINGS VOLUME 7616
SPIE OPTO | 23-28 JANUARY 2010
Novel In-Plane Semiconductor Lasers IX
Proceedings Volume 7616 is from: Logo
SPIE OPTO
23-28 January 2010
San Francisco, California, United States
Front Matter
Proc. SPIE 7616, Front Matter: Volume 7616, 761601 (17 March 2010); doi: 10.1117/12.855148
Low Dimensional Material
Proc. SPIE 7616, Unique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laser, 761602 (8 February 2010); doi: 10.1117/12.842278
Proc. SPIE 7616, Random population of InAs-GaAs quantum dots, 761605 (12 February 2010); doi: 10.1117/12.845843
Proc. SPIE 7616, Dual-state lasing and the case against the phonon bottleneck, 761606 (12 February 2010); doi: 10.1117/12.845632
Materials + Mode-Locking
Proc. SPIE 7616, Pulse characteristics of passively mode-locked quantum dot lasers, 761607 (18 February 2010); doi: 10.1117/12.843738
Proc. SPIE 7616, Improved performance of GaAsSb/GaAs SQW lasers, 761608 (12 February 2010); doi: 10.1117/12.842253
Proc. SPIE 7616, A platform for GaAs opto-electronic integrated circuits based on GaAs/AlGaAs regrowth upon patterned InGaP, 76160A (12 February 2010); doi: 10.1117/12.841612
Mode-Locking and Dynamics
Proc. SPIE 7616, Progress on compact ultrafast quantum dot based lasers, 76160C (12 February 2010); doi: 10.1117/12.843690
Proc. SPIE 7616, Double-interval harmonic mode-locking technique for diverse waveform generation, 76160D (12 February 2010); doi: 10.1117/12.841472
Proc. SPIE 7616, Linewidth enhancement factor and dynamical response of an injection-locked quantum-dot Fabry-Perot laser at 1310nm, 76160F (12 February 2010); doi: 10.1117/12.842161
Nitrides
Proc. SPIE 7616, Progress of blue and green InGaN laser diodes, 76160G (12 February 2010); doi: 10.1117/12.842131
Proc. SPIE 7616, Lasing of semi-polar InGaN/GaN(1122) heterostructures grown on m-plane sapphire substrates, 76160H (12 February 2010); doi: 10.1117/12.842177
QCLs I
Proc. SPIE 7616, An aluminum-free mid-infrared quantum cascade laser, 76160M (12 February 2010); doi: 10.1117/12.841142
Proc. SPIE 7616, Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers, 76160N (12 February 2010); doi: 10.1117/12.842593
QCLs II (THz QCLs)
Proc. SPIE 7616, Surface-emitting THz sources based on difference-frequency generation in mid-infrared quantum cascade lasers, 76160R (12 February 2010); doi: 10.1117/12.845066
Silicon Photonics: Joint Session with Conference 7606
Proc. SPIE 7616, Thin film edge emitting lasers integrated onto silicon, 76160S (12 February 2010); doi: 10.1117/12.846414
Proc. SPIE 7616, Compact hybrid Si microring lasers, 76160T (12 February 2010); doi: 10.1117/12.843331
Proc. SPIE 7616, Sb-based laser sources grown by molecular beam epitaxy on silicon substrates, 76160V (12 February 2010); doi: 10.1117/12.840418
High Power / High Stability
Proc. SPIE 7616, High-power spectrally-stable DBR semiconductor lasers designed for pulsing in the nanosecond regime, 76160W (12 February 2010); doi: 10.1117/12.848064
Proc. SPIE 7616, High-power ultralow-noise semiconductor external cavity lasers based on low-confinement optical waveguide gain media, 76160X (12 February 2010); doi: 10.1117/12.846662
Proc. SPIE 7616, Ultra high power, ultra low RIN up to 20 GHz 1.55 μm DFB AlGaInAsP laser for analog applications, 76160Y (12 February 2010); doi: 10.1117/12.840917
Proc. SPIE 7616, High-power, high-reliability, and narrow linewidth, Al-free DFB laser diode for Cs pumping (852nm), 76160Z (12 February 2010); doi: 10.1117/12.841262
Proc. SPIE 7616, High-power ridge waveguide DFB and DFB-MOPA lasers at 1064 nm with a vertical farfield angle of 15°, 761610 (12 February 2010); doi: 10.1117/12.840491
QCLs III
Proc. SPIE 7616, High performance short wavelength InP-based quantum cascade lasers, 761612 (12 February 2010); doi: 10.1117/12.847188
Proc. SPIE 7616, Coherent transport in QCLs: a new theoretical approach, 761614 (12 February 2010); doi: 10.1117/12.841264
Proc. SPIE 7616, Room-temperature edge and surface-emitting distributed-feedback quantum cascade lasers without top cladding layers, 761615 (12 February 2010); doi: 10.1117/12.841831
QCLs IV
Proc. SPIE 7616, Heat transfer speed and phonon related phenomena in terahertz quantum cascade lasers, 761617 (12 February 2010); doi: 10.1117/12.846428
Proc. SPIE 7616, Integrated tunable DBR quantum cascade lasers with 30 cm-1 tuning range at 4.7 μm, 761618 (12 February 2010); doi: 10.1117/12.842397
Novel MIR lasers
Proc. SPIE 7616, Challenges for mid-IR interband cascade lasers, 761619 (12 February 2010); doi: 10.1117/12.844678
Proc. SPIE 7616, Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots, 76161A (12 February 2010); doi: 10.1117/12.843033
Proc. SPIE 7616, InAs-based plasmon-waveguide interband cascade lasers, 76161B (12 February 2010); doi: 10.1117/12.842150
High Power I
Proc. SPIE 7616, Simulation of high brightness tapered lasers, 76161E (12 February 2010); doi: 10.1117/12.841688
Proc. SPIE 7616, Two-sections tapered diode lasers for 1 Gbps free-space optical communications with high modulation efficiency, 76161F (12 February 2010); doi: 10.1117/12.840702
Proc. SPIE 7616, Catastrophic optical mirror damage in diode lasers monitored during single pulse operation, 76161G (12 February 2010); doi: 10.1117/12.839585
Proc. SPIE 7616, Comparison of 650 nm tapered lasers with different lateral geometries at output powers up to 1 W, 76161H (12 February 2010); doi: 10.1117/12.840642
High Power II
Proc. SPIE 7616, High-power high-brightness semiconductor lasers based on novel waveguide concepts, 76161I (12 February 2010); doi: 10.1117/12.846577
Proc. SPIE 7616, High-peak-power pulse generation with GHz repetition rate using a Q-switched 1060nm DBR tapered laser, 76161J (12 February 2010); doi: 10.1117/12.839958
Proc. SPIE 7616, Novel single-mode fiber coupled broadband seed source for pulsed fiber laser systems, 76161K (12 February 2010); doi: 10.1117/12.842092
Proc. SPIE 7616, High-power high-brightness semiconductor tapered diode lasers for the red and near infrared spectral range, 76161L (12 February 2010); doi: 10.1117/12.839870
QCLs V
Proc. SPIE 7616, Ring resonator-based surface emitting quantum cascade lasers, 76161Q (12 February 2010); doi: 10.1117/12.842703
Proc. SPIE 7616, Near-infrared quenching effects on mid-infrared quantum cascade lasers, 76161R (12 February 2010); doi: 10.1117/12.842765
Poster Session
Proc. SPIE 7616, Manipulation of optical modes in quantum dot laser diodes by selective oxidation of high aluminum content AlGaAs layers, 76161T (12 February 2010); doi: 10.1117/12.846843
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