PROCEEDINGS VOLUME 7617
SPIE OPTO | 23-28 JANUARY 2010
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Proceedings Volume 7617 is from: Logo
SPIE OPTO
23-28 January 2010
San Francisco, California, United States
Front Matter
Proc. SPIE 7617, Front Matter: Volume 7617, 761701 (17 March 2010); doi: 10.1117/12.855149
Progress in LEDs and OLEDs
Proc. SPIE 7617, Increased pressure digital metalorganic vapor phase epitaxy system with high-speed switching valves for growing high-In-content GaInN, 761702 (12 February 2010); doi: 10.1117/12.848616
Proc. SPIE 7617, Development of phosphorescent OLED lighting panels for highly efficient solid state lighting, 761704 (8 February 2010); doi: 10.1117/12.845246
LED Applications and SSL I
Proc. SPIE 7617, Planar lighting by blue LEDs array with remote phosphor, 761707 (12 February 2010); doi: 10.1117/12.841218
LED Design and Fabrication I
Proc. SPIE 7617, Enhancement of angular flux utilization and light extraction efficiency based on micro array in GaN LEDs, 76170A (24 February 2010); doi: 10.1117/12.843436
Proc. SPIE 7617, Abbreviated GaN metalorganic vapor phase epitaxy growth mode on nano-patterned sapphire for enhanced efficiency of InGaN-based light-emitting diodes, 76170G (12 February 2010); doi: 10.1117/12.841503
IQE and Droop
Proc. SPIE 7617, A study on the reverse-bias and ESD instabilities of InGaN-based green LEDs, 76170M (12 February 2010); doi: 10.1117/12.841826
LED Design and Fabrication II
Proc. SPIE 7617, Surface roughness of gallium nitride with volcano-like protrusions formed by KrF excimer laser etching, 76170P (12 February 2010); doi: 10.1117/12.841636
Proc. SPIE 7617, Enhanced performance of vertical GaN-based LEDs with a highly reflective ohmic contact and a nano-roughened indium-zinc oxide transparent conduction layer, 76170Q (12 February 2010); doi: 10.1117/12.840170
Photonic Crystals and Surface Plasmons
Proc. SPIE 7617, Surface plasmon dispersion engineering via double-metallic Au/Ag layers for nitride light-emitting diodes, 76170W (12 February 2010); doi: 10.1117/12.842742
LED Applications and SSL II
Proc. SPIE 7617, Influence of the injection current on the degradation of white high-brightness light emitting diodes, 76170Y (12 February 2010); doi: 10.1117/12.838612
Proc. SPIE 7617, 'No blue' LED solution for photolithography room illumination, 76170Z (12 February 2010); doi: 10.1117/12.840903
Proc. SPIE 7617, Novel sensor for color control in solid state lighting applications, 761711 (12 February 2010); doi: 10.1117/12.842694
OLED
Proc. SPIE 7617, Novel concepts for OLED lighting, 761712 (12 February 2010); doi: 10.1117/12.845465
Proc. SPIE 7617, On the lighting design aspect of OLED lighting, 761714 (12 February 2010); doi: 10.1117/12.847822
Proc. SPIE 7617, Measuring the internal luminescence quantum efficiency of OLED emitter materials in electrical operation, 761715 (12 February 2010); doi: 10.1117/12.842114
Proc. SPIE 7617, Outcoupling efficiency in small-molecule OLEDs: from theory to experiment, 761716 (12 February 2010); doi: 10.1117/12.840043
Semipolar and Nonpolar Growth
Proc. SPIE 7617, Nonpolar and semipolar GaN heteroepitaxy on sapphire for LED application, 761717 (12 February 2010); doi: 10.1117/12.847425
Novel Substrates and Materials
Proc. SPIE 7617, High efficiency green LEDs using II-VI color converters, 76171A (12 February 2010); doi: 10.1117/12.853330
Proc. SPIE 7617, Silicon nanocrystals based light emitting diodes integrated using all inorganic metal oxides as the charge transport layers, 76171E (12 February 2010); doi: 10.1117/12.842655
UV-LEDs
Proc. SPIE 7617, Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs, 76171G (12 February 2010); doi: 10.1117/12.845512
Proc. SPIE 7617, Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures, 76171H (12 February 2010); doi: 10.1117/12.845439
Proc. SPIE 7617, Ni/Ag as low resistive ohmic contact to p-type AlGaN for UV LEDs, 76171I (12 February 2010); doi: 10.1117/12.841968
Poster Session
Proc. SPIE 7617, Effect of current crowding on the ideality factor in MQW InGaN/GaN LEDs on sapphire substrates, 76171K (12 February 2010); doi: 10.1117/12.840894
Proc. SPIE 7617, White-light generation through Ce3+/Mn2+-codoped and Eu2+-doped Ba1.2Ca0.8-δSiO4 T-phase phosphors, 76171L (12 February 2010); doi: 10.1117/12.840520
Proc. SPIE 7617, Blue-emitting Sr3Ga2O5Cl2:Eu2+ phosphor for white-light-emitting diode, 76171M (12 February 2010); doi: 10.1117/12.840458
Proc. SPIE 7617, Syntonized white up-converted emission by Tm3+-Yb3+-Er3+-Ho3+ doped ZrO2 nanocrystals, 76171Q (12 February 2010); doi: 10.1117/12.843032
Proc. SPIE 7617, Efficiency enhancement in white phosphor-on-cup light-emitting diodes using short wave-pass filters, 76171R (12 February 2010); doi: 10.1117/12.843034
Proc. SPIE 7617, Dirty LED: effect of dust, fat, fingerprints, water, oil and coal on light output, 76171S (12 February 2010); doi: 10.1117/12.843321
Proc. SPIE 7617, Grating coupled enhancement of light emission from IR light emitting diode devices, 76171W (24 February 2010); doi: 10.1117/12.847990
Proc. SPIE 7617, Phosphor concentration and geometry for high power white light emitting diode, 76171Y (12 February 2010); doi: 10.1117/12.851535
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