Proceedings Volume 7636 is from: Logo
SPIE ADVANCED LITHOGRAPHY
21-25 February 2010
San Jose, California, United States
Front Matter
Proc. SPIE 7636, Front Matter: Volume 7636, 763601 (23 April 2010); doi: 10.1117/12.863693
Invited Session I
Proc. SPIE 7636, Actinic phase defect detection and printability analysis for patterned EUVL mask, 763602 (18 March 2010); doi: 10.1117/12.846678
Proc. SPIE 7636, Optics for EUV production, 763603 (18 March 2010); doi: 10.1117/12.848624
Proc. SPIE 7636, Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study, 763604 (18 March 2010); doi: 10.1117/12.846629
EUVL: Joint Session with Conference 7639
Proc. SPIE 7636, Characterization of line-edge roughness (LER) propagation from resists: underlayer interfaces in ultrathin resist films, 763605 (18 March 2010); doi: 10.1117/12.848405
Sources I
Proc. SPIE 7636, First generation laser-produced plasma source system for HVM EUV lithography, 763608 (20 March 2010); doi: 10.1117/12.846271
Proc. SPIE 7636, EUV source development for AIMS and blank inspection, 763609 (18 March 2010); doi: 10.1117/12.846559
Proc. SPIE 7636, Analysis, simulation, and experimental studies of YAG and CO[sub]2[/sub] laser-produced plasma for EUV lithography sources, 76360A (20 March 2010); doi: 10.1117/12.848222
Proc. SPIE 7636, Sn debris cleaning by plasma in DPP EUV source systems for HVM, 76360B (20 March 2010); doi: 10.1117/12.846359
Proc. SPIE 7636, Development and performance of grazing and normal incidence collectors for the HVM DPP and LPP sources, 76360C (20 March 2010); doi: 10.1117/12.846712
Proc. SPIE 7636, Experimental and numerical investigations on the density profile of CO2 laser-produced Sn plasma for an EUVL source, 76360D (20 March 2010); doi: 10.1117/12.848407
Components Lifetime
Proc. SPIE 7636, Complex species and pressure dependence of intensity scaling laws for contamination rates of EUV optics determined by XPS and ellipsometry, 76360E (20 March 2010); doi: 10.1117/12.846849
Proc. SPIE 7636, Carbon film growth on model MLM cap layer: interaction of selected hydrocarbon vapor with Ru(10-10) surface, 76360F (22 March 2010); doi: 10.1117/12.846645
Proc. SPIE 7636, Carbon contamination topography analysis of EUV masks, 76360G (20 March 2010); doi: 10.1117/12.846996
Proc. SPIE 7636, Monitoring reticle molecular contamination in ASML EUV Alpha Demo Tool, 76360H (20 March 2010); doi: 10.1117/12.847267
Masks and Yield I
Proc. SPIE 7636, A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection, 76360K (20 March 2010); doi: 10.1117/12.846922
Proc. SPIE 7636, Impact of EUV mask absorber defect with pattern-roughness on lithographic images, 76360L (20 March 2010); doi: 10.1117/12.846347
Proc. SPIE 7636, Printability of extreme ultraviolet lithography mask pattern defects for 22-40 nm half-pitch features, 76360M (20 March 2010); doi: 10.1117/12.845740
Proc. SPIE 7636, Particle removal challenges of EUV patterned masks for the sub-22nm HP node, 76360N (20 March 2010); doi: 10.1117/12.847056
Proc. SPIE 7636, Removal of carbon and nanoparticles from lithographic materials by plasma assisted cleaning by metastable atom neutralization (PACMAN), 76360O (20 March 2010); doi: 10.1117/12.846282
Resists
Proc. SPIE 7636, EUV lithography for 22nm half pitch and beyond: exploring resolution, LWR, and sensitivity tradeoffs, 76360P (20 March 2010); doi: 10.1117/12.842408
Proc. SPIE 7636, Patterning with EUVL: the road to 22nm node, 76360Q (20 March 2010); doi: 10.1117/12.846474
Proc. SPIE 7636, Resist pattern prediction at EUV, 76360R (20 March 2010); doi: 10.1117/12.846535
Proc. SPIE 7636, Development of resist material and process for hp-2x-nm devices using EUV lithography, 76360S (20 March 2010); doi: 10.1117/12.846088
Proc. SPIE 7636, Development of EUV resist for 22nm half pitch and beyond, 76360T (20 March 2010); doi: 10.1117/12.846332
Masks
Proc. SPIE 7636, Improvement of total quality on EUV mask blanks toward volume production, 76360U (20 March 2010); doi: 10.1117/12.849363
Proc. SPIE 7636, Mask inspection technologies for 22nm HP and beyond, 76360V (20 March 2010); doi: 10.1117/12.850766
Proc. SPIE 7636, A study of reticle non-flatness induced image placement error contributions in EUV lithography, 76360W (20 March 2010); doi: 10.1117/12.847107
Proc. SPIE 7636, Absorber stack optimization in EUVL masks: lithographic performances in alpha demo tool and other issues, 76360X (20 March 2010); doi: 10.1117/12.847955
Proc. SPIE 7636, Techniques for removal of contamination from EUVL mask without surface damage, 76360Y (20 March 2010); doi: 10.1117/12.847026
Proc. SPIE 7636, Inspecting EUV mask blanks with a 193nm system, 76360Z (20 March 2010); doi: 10.1117/12.850825
Sources II
Proc. SPIE 7636, Tin DPP source collector module (SoCoMo): status of Beta products and HVM developments, 763610 (20 March 2010); doi: 10.1117/12.846545
Proc. SPIE 7636, Debris measurement at the intermediate focus of a laser-assisted discharge-produced plasma light source, 763611 (20 March 2010); doi: 10.1117/12.846590
Proc. SPIE 7636, Angular distribution of debris from CO[sub]2[/sub] and YAG laser-produced tin plasmas, 763612 (20 March 2010); doi: 10.1117/12.848333
Proc. SPIE 7636, Normal incidence collector for LPP sources with integrated debris mitigation, 763613 (20 March 2010); doi: 10.1117/12.846548
Imaging and Modeling
Proc. SPIE 7636, Feasibility of EUVL thin absorber mask for minimization of mask shadowing effect, 763614 (20 March 2010); doi: 10.1117/12.846506
Proc. SPIE 7636, Full chip correction of EUV design, 763615 (20 March 2010); doi: 10.1117/12.846966
Proc. SPIE 7636, Study of practical TAT reduction approaches for EUV flare correction, 763616 (20 March 2010); doi: 10.1117/12.846326
Proc. SPIE 7636, Corner rounding in EUV photoresist: tuning through molecular weight, PAG size, and development time, 763617 (20 March 2010); doi: 10.1117/12.848362
Proc. SPIE 7636, EUV flare correction for the half-pitch 22nm node, 763618 (20 March 2010); doi: 10.1117/12.846487
Proc. SPIE 7636, Physical resist models and their calibration: their readiness for accurate EUV lithography simulation, 763619 (20 March 2010); doi: 10.1117/12.846549
Masks and Yield II
Proc. SPIE 7636, Actinic imaging of native and programmed defects on a full-field mask, 76361A (20 March 2010); doi: 10.1117/12.846670
Proc. SPIE 7636, Printability and inspectability of programmed pit defects on the masks in EUV lithography, 76361B (20 March 2010); doi: 10.1117/12.847956
Proc. SPIE 7636, Actinic review of EUV masks, 76361C (20 March 2010); doi: 10.1117/12.848380
Proc. SPIE 7636, EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing, 76361D (20 March 2010); doi: 10.1117/12.847371
Proc. SPIE 7636, The analysis of EUV mask defects using a wafer defect inspection system, 76361E (20 March 2010); doi: 10.1117/12.846482
Proc. SPIE 7636, Evaluation results of a new EUV reticle pod based on SEMI E152, 76361F (20 March 2010); doi: 10.1117/12.846316
Invited Session II
Proc. SPIE 7636, Nikon EUVL development progress update, 76361G (20 March 2010); doi: 10.1117/12.846459
Proc. SPIE 7636, EUV into production with ASML's NXE platform, 76361H (20 March 2010); doi: 10.1117/12.845700
Tools and Integration Studies
Proc. SPIE 7636, The SEMATECH Berkeley MET pushing EUV development beyond 22nm half pitch, 76361J (23 March 2010); doi: 10.1117/12.848438
Proc. SPIE 7636, Iterative procedure for in-situ optical testing with an incoherent source, 76361K (23 March 2010); doi: 10.1117/12.846235
Proc. SPIE 7636, Performance of the ASML EUV Alpha Demo Tool, 76361L (23 March 2010); doi: 10.1117/12.848210