PROCEEDINGS VOLUME 7638
SPIE ADVANCED LITHOGRAPHY | 21-25 FEBRUARY 2010
Metrology, Inspection, and Process Control for Microlithography XXIV
IN THIS VOLUME

0 Sessions, 121 Papers, 0 Presentations
Front Matter  (1)
Inspection I  (6)
LER/LWR  (5)
DBM I  (4)
SEM  (3)
Overlay  (6)
DBM II  (4)
Proceedings Volume 7638 is from: Logo
SPIE ADVANCED LITHOGRAPHY
21-25 February 2010
San Jose, California, United States
Front Matter
Proc. SPIE 7638, Front Matter for Volume 7638, 763801 (5 May 2010); doi: 10.1117/12.858565
Invited Session
Proc. SPIE 7638, 3D-AFM enhancement for CD metrology dedicated to lithography sub-28-nm node requirements, 763802 (17 March 2010); doi: 10.1117/12.846550
Proc. SPIE 7638, Robust characterization of small grating boxes using rotating stage Mueller matrix polarimeter, 763803 (2 April 2010); doi: 10.1117/12.846234
Mask Litho Metro
Proc. SPIE 7638, CDSEM focus/dose monitor for product applications, 763804 (2 April 2010); doi: 10.1117/12.846694
Proc. SPIE 7638, Improving lithographic performance for 32 nm, 763805 (2 April 2010); doi: 10.1117/12.848613
Proc. SPIE 7638, New exposure tool management technology with quick focus measurement in half pitch 22nm generation, 763806 (2 April 2010); doi: 10.1117/12.846329
Proc. SPIE 7638, Full wafer macro-CD imaging for excursion control of fast patterning processes, 763807 (2 April 2010); doi: 10.1117/12.846618
Proc. SPIE 7638, Focus and dose deconvolution technique for improved CD control of immersion clusters, 763808 (2 April 2010); doi: 10.1117/12.848444
Mask Litho Metro and PC
Proc. SPIE 7638, A single metrology tool solution for complete exposure tool setup, 763809 (2 April 2010); doi: 10.1117/12.848388
Proc. SPIE 7638, Process variation monitoring (PVM) by wafer inspection tool as a complementary method to CD-SEM for mapping field CDU on advanced production devices, 76380B (2 April 2010); doi: 10.1117/12.848699
Proc. SPIE 7638, Reducing the impact of reticle CD-non-uniformity of multiple structures by dose corrections based on aerial image measurements, 76380D (2 April 2010); doi: 10.1117/12.848053
Proc. SPIE 7638, New measurement technology for CD and pattern profile variation using optical Fourier space, 76380E (2 April 2010); doi: 10.1117/12.846336
Proc. SPIE 7638, Application of automated topography focus corrections for volume manufacturing, 76380F (2 April 2010); doi: 10.1117/12.846652
Inspection I
Proc. SPIE 7638, Defect metrology challenges at the 11-nm node and beyond, 76380H (2 April 2010); doi: 10.1117/12.846623
Proc. SPIE 7638, Systematic and random defects control with design-based metrology, 76380I (2 April 2010); doi: 10.1117/12.846739
Proc. SPIE 7638, The limits and extensibility of optical patterned defect inspection, 76380J (2 April 2010); doi: 10.1117/12.850935
Proc. SPIE 7638, Advanced lithography: wafer defect scattering analysis at DUV, 76380K (2 April 2010); doi: 10.1117/12.848326
Proc. SPIE 7638, After development inspection defectivity studies of an advanced memory device, 76380L (2 April 2010); doi: 10.1117/12.848066
Proc. SPIE 7638, Defectivity decrease in the photolithography process by AMC level reduction through implementation of novel filtration and monitoring solutions, 76380M (2 April 2010); doi: 10.1117/12.845591
LER/LWR
Proc. SPIE 7638, Statistically accurate analysis of line width roughness based on discrete power spectrum, 76380N (2 April 2010); doi: 10.1117/12.846071
Proc. SPIE 7638, Measurements and sensitivities of LWR in poly spacers, 76380O (2 April 2010); doi: 10.1117/12.846601
Proc. SPIE 7638, LER detection using dark field spectroscopic reflectometry, 76380P (2 April 2010); doi: 10.1117/12.846449
Proc. SPIE 7638, CD-SEM metrology of spike detection on sub-40 nm contact holes, 76380Q (2 April 2010); doi: 10.1117/12.846656
Proc. SPIE 7638, Model-based analysis of SEM images to automatically extract linewidth, edge roughness, and wall angle, 76380R (2 April 2010); doi: 10.1117/12.848435
DBM I
Proc. SPIE 7638, Proximity-associated errors in contour metrology, 76380S (2 April 2010); doi: 10.1117/12.848406
Proc. SPIE 7638, Monitoring and characterization of metal-over-contact based edge-contour extraction measurement followed by electrical simulation, 76380T (2 April 2010); doi: 10.1117/12.846909
Proc. SPIE 7638, Electrical validation of through process OPC verification limits, 76380U (2 April 2010); doi: 10.1117/12.846572
Proc. SPIE 7638, Computational inspection applied to a mask inspection system with advanced aerial imaging capability, 76380V (2 April 2010); doi: 10.1117/12.848615
New Metrology Applications
Proc. SPIE 7638, Hybrid reference metrology exploiting patterning simulation, 76380W (2 April 2010); doi: 10.1117/12.848311
Proc. SPIE 7638, Scatterometry metrology validation with respect to process control, 76380X (2 April 2010); doi: 10.1117/12.848535
Proc. SPIE 7638, Smaller, smarter, faster, and more accurate: the new overlay metrology, 76380Y (2 April 2010); doi: 10.1117/12.848002
X-ray and Novel
Proc. SPIE 7638, Calibration of 25-nm pitch grating reference by high-resolution grazing incidence x-ray diffraction, 763810 (2 April 2010); doi: 10.1117/12.846519
Proc. SPIE 7638, A new x-ray metrology for determining cross-sectional profile of semiconductor device pattern, 763811 (2 April 2010); doi: 10.1117/12.846515
Proc. SPIE 7638, Characterization of cross sectional profile of nanostructure line grating using small angle x-ray scattering, 763812 (2 April 2010); doi: 10.1117/12.848193
Proc. SPIE 7638, Nanofabrication with a helium ion microscope, 763814 (2 April 2010); doi: 10.1117/12.862438
Proc. SPIE 7638, IR microscopy as an early electrical yield indicator in bonded wafer pairs used for 3D integration, 763815 (2 April 2010); doi: 10.1117/12.848400
Inspection II
Proc. SPIE 7638, Enhanced capture rate for haze defects in production wafer inspection, 763816 (16 April 2010); doi: 10.1117/12.846718
Proc. SPIE 7638, Preliminary results for photomask haze mitigation in a fab environment, 763817 (2 April 2010); doi: 10.1117/12.848283
Proc. SPIE 7638, Use of wafer backside inspection and SPR to address systemic tool and process issues, 763818 (2 April 2010); doi: 10.1117/12.846688
Proc. SPIE 7638, Reticle haze control: global update and technology roadmap, 763819 (2 April 2010); doi: 10.1117/12.848432
AFM and Standards
Proc. SPIE 7638, Reference material (RM) 8820: a versatile new NIST standard for nanometrology, 76381B (2 April 2010); doi: 10.1117/12.848037
Proc. SPIE 7638, Dimensional metrology with sub-nanometer uncertainty: unique role of AFM as the reference, 76381C (2 April 2010); doi: 10.1117/12.846870
Proc. SPIE 7638, Calibration of 1-nm SiC step height standards, 76381D (2 April 2010); doi: 10.1117/12.849176
Scatterometry
Proc. SPIE 7638, Sub-50-nm measurements using a 193-nm angle-resolved scatterfield microscope, 76381E (2 April 2010); doi: 10.1117/12.846383
Proc. SPIE 7638, Effect of bandwidth and numerical aperture in optical scatterometry, 76381F (2 April 2010); doi: 10.1117/12.846776
Proc. SPIE 7638, Use of multiple azimuthal angles to enable advanced scatterometry applications, 76381G (2 April 2010); doi: 10.1117/12.846692
Proc. SPIE 7638, Simultaneous measurement of optical properties and geometry of resist using multiple scatterometry gratings, 76381H (2 April 2010); doi: 10.1117/12.846648
Proc. SPIE 7638, Stability of polarimetric grating characterization with beam spot larger than grating box, 76381I (2 April 2010); doi: 10.1117/12.846445
Proc. SPIE 7638, Scatterometry characterization of spacer double patterning structures, 76381J (2 April 2010); doi: 10.1117/12.848518
SEM
Proc. SPIE 7638, Sub-nanometer calibration of CD-SEM line width by using STEM, 76381K (2 April 2010); doi: 10.1117/12.846436
Proc. SPIE 7638, Electron-beam induced photoresist shrinkage influence on 2D profiles, 76381L (2 April 2010); doi: 10.1117/12.846991
Proc. SPIE 7638, SEM image modeling using the modular Monte Carlo model MCSEM, 76381O (2 April 2010); doi: 10.1117/12.846543
Overlay
Proc. SPIE 7638, A comparison of advanced overlay technologies, 76381P (2 April 2010); doi: 10.1117/12.848189
Proc. SPIE 7638, Detection of lateral CD shift with scatterometry on grating structures in production layout, 76381Q (2 April 2010); doi: 10.1117/12.848522
Proc. SPIE 7638, Automated optimized overlay sampling for high-order processing in double patterning lithography, 76381R (2 April 2010); doi: 10.1117/12.846371