Front Matter
Proc. SPIE 7639, Front Matter: Volume 7639, 763901 (17 April 2010); doi: 10.1117/12.863839
Invited Session
Proc. SPIE 7639, The evolution of patterning process models in computational lithography, 763902 (13 March 2010); doi: 10.1117/12.851816
Double Patterning and Double Exposure I
Proc. SPIE 7639, Resist material for negative tone development process, 763904 (26 March 2010); doi: 10.1117/12.846026
Proc. SPIE 7639, Non-reciprocal double-exposure materials for 193nm pitch division, 763905 (26 March 2010); doi: 10.1117/12.846988
Proc. SPIE 7639, Photobase generator assisted pitch division, 763906 (26 March 2010); doi: 10.1117/12.846395
Proc. SPIE 7639, The important challenge to extend spacer DP process towards 22nm and beyond, 763907 (26 March 2010); doi: 10.1117/12.845970
Proc. SPIE 7639, Carbon-rich spin on sidewall material for self-aligned double-patterning technology, 763908 (26 March 2010); doi: 10.1117/12.846267
EUVL: Joint Session with Conference 7636
Proc. SPIE 7639, Study on approaches for improvement of EUV-resist sensitivity, 763909 (30 March 2010); doi: 10.1117/12.846031
Proc. SPIE 7639, Polymer photochemistry at the EUV wavelength, 76390A (26 March 2010); doi: 10.1117/12.845997
Proc. SPIE 7639, Analysis of trade-off relationships in resist patterns delineated using SFET of Selete, 76390B (26 March 2010); doi: 10.1117/12.846500
Novel Resist Materials and Processes I
Proc. SPIE 7639, Advanced patterning solutions based on the shrink process assisted by double exposure (SPADE), 76390C (26 March 2010); doi: 10.1117/12.848047
Proc. SPIE 7639, Design, synthesis, and characterization of fluorine-free PAGs for 193-nm lithography, 76390D (26 March 2010); doi: 10.1117/12.846600
Proc. SPIE 7639, Development of an inorganic photoresist for DUV, EUV, and electron beam imaging, 76390E (26 March 2010); doi: 10.1117/12.846672
Proc. SPIE 7639, A silicon-containing resist for immersion lithography, 76390F (26 March 2010); doi: 10.1117/12.846280
Proc. SPIE 7639, New self-assembly strategies for next-generation lithography, 76390G (26 March 2010); doi: 10.1117/12.848409
Proc. SPIE 7639, Design and development of production-worthy developable BARCs(DBARCs) for implant lithography, 76390H (26 March 2010); doi: 10.1117/12.846708
Novel Resist Materials and Processes II
Proc. SPIE 7639, Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 1: lithographic patterning, 76390I (26 March 2010); doi: 10.1117/12.846443
Proc. SPIE 7639, Multilevel integration of patternable low-κ material into advanced Cu BEOL, 76390J (26 March 2010); doi: 10.1117/12.851225
Proc. SPIE 7639, Advantages of BARC and photoresist matching for 193-nm photosensitive BARC applications, 76390K (26 March 2010); doi: 10.1117/12.846608
Proc. SPIE 7639, Sub-millisecond post exposure bake of chemically amplified resists by CO2 laser heat treatment, 76390L (26 March 2010); doi: 10.1117/12.848418
Next-Generation Resist Architectures
Proc. SPIE 7639, EUV RLS performance tradeoffs for a polymer bound PAG resist, 76390M (26 March 2010); doi: 10.1117/12.847489
Proc. SPIE 7639, Aqueous and solvent developed negative-tone molecular resists, 76390O (26 March 2010); doi: 10.1117/12.848414
Proc. SPIE 7639, Comparison of star and linear ArF resists, 76390P (26 March 2010); doi: 10.1117/12.848344
Proc. SPIE 7639, Characteristics of main chain decomposable star shaped polymer on EUV lithography, 76390Q (30 March 2010); doi: 10.1117/12.848439
Proc. SPIE 7639, Development of EUV resists based on various new materials, 76390R (26 March 2010); doi: 10.1117/12.846429
Proc. SPIE 7639, High resolution positive-working molecular resist attached with alicyclic acid-leaving group, 76390S (26 March 2010); doi: 10.1117/12.851392
Novel Materials, Processes, and Applications
Proc. SPIE 7639, Negative-tone chemically amplified molecular resist based on novel fullerene derivative for nanolithography, 76390U (30 March 2010); doi: 10.1117/12.846391
Proc. SPIE 7639, Non-chemically amplified resists for 193-nm immersion lithography: influence of absorbance on performance, 76390V (30 March 2010); doi: 10.1117/12.846971
Proc. SPIE 7639, Photobase generator and photo decomposable quencher for high-resolution photoresist applications, 76390W (30 March 2010); doi: 10.1117/12.848623
Proc. SPIE 7639, The optimizations of resist shrink process using track-based technology, 76390X (30 March 2010); doi: 10.1117/12.846497
Proc. SPIE 7639, Dependence of 20-nm C/H CD windows on critical process parameters, 76390Y (30 March 2010); doi: 10.1117/12.846275
Proc. SPIE 7639, Orthogonal lithography for organic electronics, 76390Z (30 March 2010); doi: 10.1117/12.848410
Proc. SPIE 7639, Grayscale lithography process study applied to zero-gap microlenses for sub-2μm CMOS image sensors, 763910 (30 March 2010); doi: 10.1117/12.846507
Proc. SPIE 7639, Improved thermal flow characteristic resist optimized for the manufacturing of microlenses, 763911 (30 March 2010); doi: 10.1117/12.848250
Proc. SPIE 7639, Environmentally friendly processing of photoresists in scCO[sub]2[/sub] and decamethyltetrasiloxane, 763912 (30 March 2010); doi: 10.1117/12.848336
Proc. SPIE 7639, Gap-fill type HSQ/ZEP520A bilayer resist process-(IV): HSQ-rod and HSQ-tip hardening processes, 763913 (30 March 2010); doi: 10.1117/12.846274
Proc. SPIE 7639, LWR reduction by novel lithographic and etch techniques, 763914 (30 March 2010); doi: 10.1117/12.846318
Proc. SPIE 7639, Alternatives to chemical amplification for 193nm lithography, 763915 (30 March 2010); doi: 10.1117/12.846924
Proc. SPIE 7639, Further analysis of the effect of point-of-use filtration on microbridging defectivity, 763917 (30 March 2010); doi: 10.1117/12.843663
Proc. SPIE 7639, Point-of-use filtration methods to reduce defectivity, 763918 (30 March 2010); doi: 10.1117/12.846346
Proc. SPIE 7639, Fabrication of dual damascene BEOL structures using a multilevel multiple exposure (MLME) scheme, part 2: RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain, 763919 (30 March 2010); doi: 10.1117/12.846593
Proc. SPIE 7639, Resist residue removal using UV ozone treatment, 76391A (30 March 2010); doi: 10.1117/12.849449
Proc. SPIE 7639, The imaging study of a novel photopolymer used in I-line negative-tone resist, 76391B (30 March 2010); doi: 10.1117/12.846435
Proc. SPIE 7639, Development of spin-on hard mask materials under resist in nano imprint lithography, 76391C (31 March 2010); doi: 10.1117/12.853200
Proc. SPIE 7639, Defect performance of a 2X node resist with a revolutionary point-of-use filter, 76391E (31 March 2010); doi: 10.1117/12.859280
Proc. SPIE 7639, New filter rating method in practice for sub-30-nm lithography process filter, 76391F (31 March 2010); doi: 10.1117/12.859457
Proc. SPIE 7639, The use of surface modifiers to mitigate pattern collapse in thin film lithography, 76391H (31 March 2010); doi: 10.1117/12.862008
Proc. SPIE 7639, Thin film buckling as a method to explore the effect of reactive rinse treatments on the mechanical properties of resist thin films, 76391I (31 March 2010); doi: 10.1117/12.862009
EUV Resist Materials and Processes
Proc. SPIE 7639, Highly sensitive EUV-resist based on thiol-ene radical reaction, 76391J (30 March 2010); doi: 10.1117/12.846339
Proc. SPIE 7639, Dynamics of radical cation of poly(4-hydroxystyrene) generated in thin film upon exposure to electron beam, 76391K (30 March 2010); doi: 10.1117/12.846699
Proc. SPIE 7639, Evaluation of hydroxyl derivatives for chemically amplified extreme ultraviolet resist, 76391L (30 March 2010); doi: 10.1117/12.846460
Proc. SPIE 7639, Characterization of the effects of base additives on a fullerene chemically amplified resist, 76391N (30 March 2010); doi: 10.1117/12.846581
Proc. SPIE 7639, Study on acid diffusion length effect with PAG-blended system and anion-bounded polymer system, 76391O (31 March 2010); doi: 10.1117/12.846033
Proc. SPIE 7639, Changes in vertical PAG distribution inside photoresist due to the variation of concentration, 76391P (31 March 2010); doi: 10.1117/12.858362
Double Patterning and Double Exposure
Proc. SPIE 7639, Process parameter influence to negative tone development process for double patterning, 76391Q (30 March 2010); doi: 10.1117/12.846027
Proc. SPIE 7639, Bottom anti-reflective coatings (BARC) for LFLE double patterning process, 76391R (30 March 2010); doi: 10.1117/12.846012