Front Matter
Proc. SPIE 7640, Front Matter: Volume 7640, 764001 (17 April 2010); doi: 10.1117/12.862757
Invited Session
FreeForm and SMO
Proc. SPIE 7640, Generation of arbitrary freeform source shapes using advanced illumination systems in high-NA immersion scanners, 764005 (4 March 2010); doi: 10.1117/12.847282
Proc. SPIE 7640, Tolerancing analysis of customized illumination for practical applications of source and mask optimization, 764007 (4 March 2010); doi: 10.1117/12.846639
Proc. SPIE 7640, Freeform illumination sources: an experimental study of source-mask optimization for 22-nm SRAM cells, 764008 (4 March 2010); doi: 10.1117/12.846918
Double Patterning I
Proc. SPIE 7640, Evaluation of double-patterning techniques for advanced logic nodes, 764009 (4 March 2010); doi: 10.1117/12.846769
Proc. SPIE 7640, Actual performance data analysis of overlay, focus, and dose control of an immersion scanner for double patterning, 76400A (10 March 2010); doi: 10.1117/12.846341
Proc. SPIE 7640, Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes, 76400B (4 March 2010); doi: 10.1117/12.845849
Proc. SPIE 7640, Litho and patterning challenges for memory and logic applications at the 22-nm node, 76400C (22 March 2010); doi: 10.1117/12.848330
Proc. SPIE 7640, Comparative study of resolution limits for double patterning and EUV processes for the 32nm contact hole case, 76400D (4 March 2010); doi: 10.1117/12.846470
Double Patterning II
Proc. SPIE 7640, Advances in dual-tone development for pitch frequency doubling, 76400E (4 March 2010); doi: 10.1117/12.846575
Proc. SPIE 7640, Spacer defined double patterning for sub-72 nm pitch logic technology, 76400F (4 March 2010); doi: 10.1117/12.846698
Proc. SPIE 7640, The impact of optical non-idealities in litho-litho-etch processing, 76400G (10 March 2010); doi: 10.1117/12.846553
Proc. SPIE 7640, Double patterning lithography study with high overlay accuracy, 76400H (10 March 2010); doi: 10.1117/12.846486
Proc. SPIE 7640, Litho-process-litho for 2D 32nm hp Logic and DRAM double patterning, 76400I (4 March 2010); doi: 10.1117/12.846998
Proc. SPIE 7640, Modeling of exploration of reversible contrast enhancement layers for double exposure lithography, 76400J (11 March 2010); doi: 10.1117/12.846525
Computational Lithography
Proc. SPIE 7640, Improving aberration control with application specific optimization using computational lithography, 76400K (4 March 2010); doi: 10.1117/12.846697
Proc. SPIE 7640, Evaluation of lithographic benefits of using ILT techniques for 22nm-node, 76400L (10 March 2010); doi: 10.1117/12.848479
Proc. SPIE 7640, A computational method for optimal application specific lens control in microlithography, 76400M (4 March 2010); doi: 10.1117/12.846836
Proc. SPIE 7640, Aerial image calculation by eigenvalues and eigenfunctions of a matrix that includes source, pupil, and mask, 76400N (4 March 2010); doi: 10.1117/12.846666
Proc. SPIE 7640, Optimization from design rules, source and mask, to full chip with a single computational lithography framework: level-set-methods-based inverse lithography technology (ILT), 76400O (10 March 2010); doi: 10.1117/12.848145
Proc. SPIE 7640, Quadratic blur kernels for latent image formation modeling, 76400P (10 March 2010); doi: 10.1117/12.848295
Polarization
Proc. SPIE 7640, In-situ Mueller matrix polarimetry of projection lenses for 193-nm lithography, 76400Q (4 March 2010); doi: 10.1117/12.845973
Proc. SPIE 7640, Experimental result of polarization characteristics separation method, 76400R (4 March 2010); doi: 10.1117/12.846323
Beyond 22 nm
Proc. SPIE 7640, Implementing and validating double patterning in 22-nm to 16-nm product design and patterning flows, 76400S (4 March 2010); doi: 10.1117/12.848194
Proc. SPIE 7640, Comparative study of line width roughness (LWR) in next-generation lithography (NGL) processes, 76400T (13 March 2010); doi: 10.1117/12.848183
Tools and Process Resolution Extensions I
Proc. SPIE 7640, Toward perfect on-wafer pattern placement: stitched overlay exposure tool characterization, 76400U (4 March 2010); doi: 10.1117/12.846847
Proc. SPIE 7640, Impact of scanner signatures on optical proximity correction, 76400V (4 March 2010); doi: 10.1117/12.845061
Proc. SPIE 7640, Overlay characterization and matching of immersion photoclusters, 76400W (4 March 2010); doi: 10.1117/12.846408
Proc. SPIE 7640, Topcoat-less resist approach for high volume production and yield enhancement of immersion lithography, 76400X (10 March 2010); doi: 10.1117/12.846520
Proc. SPIE 7640, Analysis of the impact of pupil shape variation by pupil fit modeling, 76400Y (4 March 2010); doi: 10.1117/12.846703
Tools and Process Resolution Extensions II
Proc. SPIE 7640, Predicting and reducing substrate induced focus error, 76400Z (4 March 2010); doi: 10.1117/12.846768
Proc. SPIE 7640, Lithographic scanner stability improvements through advanced metrology and control, 764010 (10 March 2010); doi: 10.1117/12.848200
Proc. SPIE 7640, Printing the metal and contact layers for the 32- and 22-nm node: comparing positive and negative tone development process, 764011 (10 March 2010); doi: 10.1117/12.848228
Proc. SPIE 7640, The impacts of scanner modeling parameters for OPC model of sub-40nm memory device, 764013 (10 March 2010); doi: 10.1117/12.846710
Proc. SPIE 7640, Simulation-based pattern matching using scanner metrology and design data to reduce reliance on CD metrology, 764014 (4 March 2010); doi: 10.1117/12.848255
Proc. SPIE 7640, The GridMapper challenge: how to integrate into manufacturing for reduced overlay error, 764015 (4 March 2010); doi: 10.1117/12.849225
Proc. SPIE 7640, Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners, 764016 (10 March 2010); doi: 10.1117/12.846413
Mask, Layout, and OPC
Proc. SPIE 7640, Novel fine-tuned model-based SRAF generation method using coherence map, 764017 (10 March 2010); doi: 10.1117/12.846322
Proc. SPIE 7640, Ultimately accurate SRAF replacement for practical phases using an adaptive search algorithm based on the optimal gradient method, 764018 (10 March 2010); doi: 10.1117/12.846345
Proc. SPIE 7640, 22nm logic lithography in the presence of local interconnect, 764019 (4 March 2010); doi: 10.1117/12.846580
Proc. SPIE 7640, Lithography and layout co-optimization beyond conventional OPC concept, 76401A (4 March 2010); doi: 10.1117/12.846264
Proc. SPIE 7640, Mask enhancer technology for sub-100nm pitch random logic layout contact hole fabrication, 76401B (13 March 2010); doi: 10.1117/12.848025
Proc. SPIE 7640, Suppressing ringing effects from very strong off-axis illumination with novel OPC approaches for low k1 lithography, 76401C (10 March 2010); doi: 10.1117/12.847977
Modeling
Proc. SPIE 7640, Three-dimensional physical photoresist model calibration and profile-based pattern verification, 76401D (13 March 2010); doi: 10.1117/12.846466
Proc. SPIE 7640, The feasibility of using image parameters for test pattern selection during OPC model calibration, 76401E (4 March 2010); doi: 10.1117/12.846686
Proc. SPIE 7640, Optical proximity correction enhancement by using model based fragmentation approaches, 76401F (4 March 2010); doi: 10.1117/12.848447
Proc. SPIE 7640, Automation of sample plan creation for process model calibration, 76401G (4 March 2010); doi: 10.1117/12.846276
Source-Mask Optimization
Proc. SPIE 7640, SMO for 28-nm logic device and beyond: impact of source and mask complexity on lithography performance, 76401H (13 March 2010); doi: 10.1117/12.846473
Proc. SPIE 7640, Illumination optics for source-mask optimization, 76401I (10 March 2010); doi: 10.1117/12.846476
Proc. SPIE 7640, Considerations in source-mask optimization for logic applications, 76401J (11 March 2010); doi: 10.1117/12.848865
Proc. SPIE 7640, Challenges for low-k1 lithography in logic devices by source mask co-optimization, 76401K (10 March 2010); doi: 10.1117/12.846263
Proc. SPIE 7640, A GPU-based full-chip source-mask optimization solution, 76401L (4 March 2010); doi: 10.1117/12.846640
Proc. SPIE 7640, Source mask optimization for advanced lithography nodes, 76401M (4 March 2010); doi: 10.1117/12.846783