Proceedings Volume 7823 is from: Logo
SPIE PHOTOMASK TECHNOLOGY
13-16 September 2010
Monterey, California, United States
Front Matter
Proc. SPIE 7823, Front Matter: Volume 7823, 782301 (19 October 2010); doi: 10.1117/12.881306
Invited Session
Proc. SPIE 7823, Mask Industry Assessment: 2010, 782303 (25 September 2010); doi: 10.1117/12.868465
Proc. SPIE 7823, Dry etching technologies for EUV mask, 782305 (29 September 2010); doi: 10.1117/12.868533
Proc. SPIE 7823, Photomask Japan 2010 panel discussion overview, 782306 (25 September 2010); doi: 10.1117/12.868534
Pattern Generation
Proc. SPIE 7823, Improvement of mask write time for curvilinear assist features at 22nm, 782307 (25 September 2010); doi: 10.1117/12.864094
Proc. SPIE 7823, eMET: 50 keV electron mask exposure tool development based on proven multi-beam projection technology, 782308 (29 September 2010); doi: 10.1117/12.864261
Proc. SPIE 7823, Multi-shaped e-beam technology for mask writing, 782309 (25 September 2010); doi: 10.1117/12.865708
Proc. SPIE 7823, Multiple beam mask writers: an industry solution to the write time crisis, 78230A (29 September 2010); doi: 10.1117/12.865992
Proc. SPIE 7823, Resist process windows in electron-beam lithography, 78230B (25 September 2010); doi: 10.1117/12.868037
Mask Process
Proc. SPIE 7823, Process window improvement on 45nm technology non volatile memory by CD uniformity improvement, 78230C (25 September 2010); doi: 10.1117/12.865484
Proc. SPIE 7823, Degradation of pattern quality due to strong electron scattering in EUV mask, 78230D (25 September 2010); doi: 10.1117/12.864212
Proc. SPIE 7823, Reduced basis method for source mask optimization, 78230E (25 September 2010); doi: 10.1117/12.866101
Proc. SPIE 7823, Plasma monitoring of chrome dry etching for mask making, 78230F (25 September 2010); doi: 10.1117/12.866828
Proc. SPIE 7823, Two complementary methods to characterize long range proximity effects due to develop loading, 78230G (25 September 2010); doi: 10.1117/12.864336
Proc. SPIE 7823, New method to determine process window considering pattern failure, 78230H (25 September 2010); doi: 10.1117/12.864301
Proc. SPIE 7823, A systematic approach to the determination of SRAF capabilities in high end mask manufacturing, 78230I (25 September 2010); doi: 10.1117/12.864210
Mask Materials
Proc. SPIE 7823, Development and characterization of a thinner binary mask absorber for 22-nm node and beyond, 78230J (25 September 2010); doi: 10.1117/12.864130
Proc. SPIE 7823, Advanced binary film for 193nm lithography extension to sub-32-nm node, 78230K (29 September 2010); doi: 10.1117/12.866006
Proc. SPIE 7823, Understanding the trade-offs of thinner binary mask absorbers, 78230M (25 September 2010); doi: 10.1117/12.865358
Proc. SPIE 7823, Aging study in advanced photomasks: impact of EFM effects on lithographic performance with MoSi binary and 6% attenuated PSM masks, 78230N (25 September 2010); doi: 10.1117/12.864529
NIL
Proc. SPIE 7823, Development of template and mask replication using jet and flash imprint lithography, 78230O (25 September 2010); doi: 10.1117/12.864332
Proc. SPIE 7823, 6-inch circle template fabrication for patterned media, 78230P (25 September 2010); doi: 10.1117/12.867541
Proc. SPIE 7823, Inspection technique for nanoimprint template with mirror electron microscopy, 78230Q (25 September 2010); doi: 10.1117/12.864090
Mask Data Preparation
Proc. SPIE 7823, Writing 32nm-hp contacts with curvilinear assist features, 78230R (25 September 2010); doi: 10.1117/12.864184
Proc. SPIE 7823, Optimization of MDP, mask writing, and mask inspection for mask manufacturing cost reduction, 78230S (25 September 2010); doi: 10.1117/12.864196
Proc. SPIE 7823, Generalization of shot definition for variable shaped e-beam machines for write time reduction, 78230T (25 September 2010); doi: 10.1117/12.867994
Simulation
Proc. SPIE 7823, Physical resist model calibration for implant level using laser-written photomasks, 78230U (25 September 2010); doi: 10.1117/12.865131
Proc. SPIE 7823, Compensation methods using a new model for buried defects in extreme ultraviolet lithography masks, 78230V (25 September 2010); doi: 10.1117/12.868281
Proc. SPIE 7823, Evaluation of a new model of mask topography effects, 78230W (25 September 2010); doi: 10.1117/12.864264
Proc. SPIE 7823, An advanced modeling approach for mask and wafer process simulation, 78230X (25 September 2010); doi: 10.1117/12.866281
Optical Proximity Correction
Proc. SPIE 7823, Model-based double dipole lithography for sub-30nm node device, 78230Z (29 September 2010); doi: 10.1117/12.864081
Proc. SPIE 7823, SMO mask requirements for low k1 lithography, 782310 (29 September 2010); doi: 10.1117/12.864317
Proc. SPIE 7823, Improving model prediction accuracy for ILT with aggressive SRAFs, 782311 (29 September 2010); doi: 10.1117/12.864528
Proc. SPIE 7823, A systematic study of source error in source mask optimization, 782312 (1 October 2010); doi: 10.1117/12.864246
Proc. SPIE 7823, Impact of model-based fracturing on e-beam proximity effect correction methodology, 782313 (29 September 2010); doi: 10.1117/12.864126
Overview Session
Proc. SPIE 7823, Design for e-beam: design insights for direct-write maskless lithography, 782315 (25 September 2010); doi: 10.1117/12.868483
Proc. SPIE 7823, Direct write electron beam lithography: a historical overview, 782316 (25 September 2010); doi: 10.1117/12.868477
Proc. SPIE 7823, Cost/benefit assessment of maskless lithography, 782318 (25 September 2010); doi: 10.1117/12.868482
Use Models and Special Applications Needed I
Proc. SPIE 7823, E-beam direct write (EBDW) as complementary lithography, 78231C (29 September 2010); doi: 10.1117/12.868485
Use Models and Special Applications Needed II
Proc. SPIE 7823, Geometrically induced dose correction method for e-beam lithography applications, 78231E (25 September 2010); doi: 10.1117/12.864263
Tool Suppliers
Proc. SPIE 7823, Cell projection use and multi column approach for throughput enhancement of EBDW system, 78231H (25 September 2010); doi: 10.1117/12.868975
Proc. SPIE 7823, Multi-shaped-beam (MSB): an evolutionary approach for high throughput e-beam lithography, 78231J (25 September 2010); doi: 10.1117/12.868977
EUV I
Proc. SPIE 7823, A lifetime study of EUV masks, 78231L (25 September 2010); doi: 10.1117/12.864948
Proc. SPIE 7823, Impact of mask topography and multilayer stack on high NA imaging of EUV masks, 78231N (29 September 2010); doi: 10.1117/12.864120
Proc. SPIE 7823, EUV mask stack optimization for enhanced imaging performance, 78231O (29 September 2010); doi: 10.1117/12.864247
Proc. SPIE 7823, Extending a 193 nm mask inspector for 22 nm HP EUV mask inspection, 78231Q (29 September 2010); doi: 10.1117/12.865839
EUV II
Proc. SPIE 7823, Natural EUV mask blank defects: evidence, timely detection, analysis and outlook, 78231T (29 September 2010); doi: 10.1117/12.865812
Proc. SPIE 7823, Printability of EUVL mask defect detected by actinic blank inspection tool and 199-nm pattern inspection tool, 78231U (29 September 2010); doi: 10.1117/12.864305
Proc. SPIE 7823, Improvement of actinic blank inspection and phase defect analysis, 78231V (29 September 2010); doi: 10.1117/12.864290
Proc. SPIE 7823, Investigation of the influence of resist patterning on absorber LWR for 22-nm-node EUV lithography, 78231W (25 September 2010); doi: 10.1117/12.869592
Mask Business
Proc. SPIE 7823, Mask shop automation: station controllers for photomask manufacturing, 78231X (25 September 2010); doi: 10.1117/12.867687
Proc. SPIE 7823, Defect reduction through Lean methodology, 78231Y (25 September 2010); doi: 10.1117/12.864524
Proc. SPIE 7823, How to match without copying: an approach for APSM mask process matching using aerial imaging, 78231Z (25 September 2010); doi: 10.1117/12.865236
Mask Repair
Proc. SPIE 7823, Advanced laser mask repair in the current wafer foundry environment, 782320 (25 September 2010); doi: 10.1117/12.864426
Proc. SPIE 7823, Impact of new MoSi mask compositions on processing and repair, 782321 (25 September 2010); doi: 10.1117/12.865450
Proc. SPIE 7823, Prospect of EUV mask repair technology using e-beam tool, 782322 (29 September 2010); doi: 10.1117/12.864288