PROCEEDINGS VOLUME 7939
SPIE OPTO | 22-27 JANUARY 2011
Gallium Nitride Materials and Devices VI
IN THIS VOLUME

0 Sessions, 53 Papers, 0 Presentations
Front Matter  (1)
Growth I  (4)
GaN Doping  (3)
FET I  (2)
FET II  (1)
Lasers  (3)
LEDs I  (2)
LEDs II  (3)
LEDs III  (3)
LEDs IV  (1)
Proceedings Volume 7939 is from: Logo
SPIE OPTO
22-27 January 2011
San Francisco, California, United States
Front Matter
Proc. SPIE 7939, Front Matter: Volume 7939, 793901 (5 April 2011); doi: 10.1117/12.891343
Growth I
Proc. SPIE 7939, Growth of bulk GaN crystal by Na flux method, 793902 (3 March 2011); doi: 10.1117/12.877114
Proc. SPIE 7939, Cathodoluminescence spectroscopy on selectively grown GaN nanowires, 793903 (3 March 2011); doi: 10.1117/12.878836
Proc. SPIE 7939, Growth and fabrication of InN-based III-nitride device structure using droplet elimination process by radical beam irradiation, 793904 (3 March 2011); doi: 10.1117/12.874840
Proc. SPIE 7939, Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes, 793905 (3 March 2011); doi: 10.1117/12.875002
GaN Doping
Proc. SPIE 7939, Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates, 793907 (3 March 2011); doi: 10.1117/12.874687
Proc. SPIE 7939, Kelvin probe measurements of p-type GaN, 79390A (4 March 2011); doi: 10.1117/12.876166
Proc. SPIE 7939, Fermi level effect on strain of Si-doped GaN, 79390B (4 March 2011); doi: 10.1117/12.878726
FET I
Proc. SPIE 7939, The role of fluorine ions in GaN heterojunction transistors: applications and stability, 79390C (4 March 2011); doi: 10.1117/12.874123
Proc. SPIE 7939, Effect of substrate offcut on AlGaN/GaN HFET structures on bulk GaN substrates, 79390E (4 March 2011); doi: 10.1117/12.875755
FET II
Proc. SPIE 7939, New factors affecting HFET stability, 1/f noise, and reliability, 79390H (4 March 2011); doi: 10.1117/12.876251
Advanced Techniques I
Proc. SPIE 7939, Point defects in GaN and related group-III nitrides studied by means of positron annihilation, 79390I (4 March 2011); doi: 10.1117/12.871611
Proc. SPIE 7939, Role of In-segregation in anomalously large band-gap bowings of (In,Al,Ga)N, 79390J (4 March 2011); doi: 10.1117/12.873402
Advanced Techniques II
Proc. SPIE 7939, Bowing of biexciton binding in AlxGa1-xN ternary alloys, 79390M (4 March 2011); doi: 10.1117/12.873265
Proc. SPIE 7939, Inhomogeneous carrier distribution in InGaN multiple quantum wells and its influences on device performances, 79390N (4 March 2011); doi: 10.1117/12.874105
Proc. SPIE 7939, Thermoelectric properties of MOCVD-grown AlInN alloys with various compositions, 79390O (4 March 2011); doi: 10.1117/12.875125
Proc. SPIE 7939, Hydrogen etch of GaN and its application to produce porous GaN caves, 79390P (4 March 2011); doi: 10.1117/12.874422
Advanced Techniques III
Proc. SPIE 7939, Plasmonic effects in In(Ga)N, 79390Q (4 March 2011); doi: 10.1117/12.877638
Lasers
Proc. SPIE 7939, Recent developments in AlGaN-based laser diodes for short ultraviolet region, 79390V (4 March 2011); doi: 10.1117/12.871742
Proc. SPIE 7939, Recent results on the physical origin of the degradation of GaN-based LEDs and lasers, 79390W (4 March 2011); doi: 10.1117/12.872986
Proc. SPIE 7939, High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates, 79390Y (4 March 2011); doi: 10.1117/12.872023
Novel Devices
Proc. SPIE 7939, The development of monolithic alternating current light-emitting diode, 793910 (4 March 2011); doi: 10.1117/12.873668
Proc. SPIE 7939, Etching formation of GaN micro optoelectronic device array, 793913 (11 March 2011); doi: 10.1117/12.878579
LEDs I
Proc. SPIE 7939, Unified model for the GaN LED efficiency droop, 793916 (4 March 2011); doi: 10.1117/12.871105
Proc. SPIE 7939, Impact of ballistic electron transport on efficiency of InGaN based LEDs, 793917 (4 March 2011); doi: 10.1117/12.875806
LEDs II
Proc. SPIE 7939, InAlGaN optical emitters: laser diodes with non-epitaxial cladding layers and ultraviolet light-emitting diodes, 793918 (4 March 2011); doi: 10.1117/12.875188
Proc. SPIE 7939, Properties of TCO anodes deposited by APCVD and their applications to OLEDs, 793919 (4 March 2011); doi: 10.1117/12.875319
Proc. SPIE 7939, An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes, 79391A (4 March 2011); doi: 10.1117/12.874304
LEDs III
Proc. SPIE 7939, Modeling of III-nitride light-emitting diodes: progress, problems, and perspectives, 79391C (4 March 2011); doi: 10.1117/12.872842
Proc. SPIE 7939, Enhancement of external quantum efficiency in GaN based LEDs, 79391D (4 March 2011); doi: 10.1117/12.877041
Proc. SPIE 7939, Vertical composition variation in nominally uniform InGaN layers revealed by aberration-corrected STEM imaging, 79391E (4 March 2011); doi: 10.1117/12.889392
LEDs IV
Proc. SPIE 7939, Optical polarization of UV-A and UV-B (In)(Al)GaN multiple quantum well light-emitting diodes, 79391G (4 March 2011); doi: 10.1117/12.876132
Poster Session
Proc. SPIE 7939, Characteristics of InGaN/sapphire-based photovoltaic devices with different superlattice absorption layers and buffer layers, 79391J (4 March 2011); doi: 10.1117/12.876366
Proc. SPIE 7939, Two-dimensional drift-diffusion simulation of GaN HFETs, 79391O (11 March 2011); doi: 10.1117/12.877336
Proc. SPIE 7939, Heterostructure designs for enhanced performance and reliability in GaN HFETs: camelback channels, 79391P (4 March 2011); doi: 10.1117/12.877717
Proc. SPIE 7939, 1/f Noise in Schottky diodes, 79391S (10 March 2011); doi: 10.1117/12.876254
Proc. SPIE 7939, Fabrication and lasing characteristics of GaN nanopillars, 79391T (4 March 2011); doi: 10.1117/12.874151
Proc. SPIE 7939, Fabrication of high-efficiency LED using moth-eye structure, 79391V (4 March 2011); doi: 10.1117/12.875198
Proc. SPIE 7939, Optical properties of nonpolar (1-100) and semipolar (1-101)GaN grown by MOCVD on Si patterned substrates, 79391W (19 February 2011); doi: 10.1117/12.875861
Proc. SPIE 7939, Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate, 79391X (4 March 2011); doi: 10.1117/12.876656
Proc. SPIE 7939, Enhancement in light extraction efficiency of GaN-based vertical light-emitting diodes by AgCu-based reflectors, 79391Z (4 March 2011); doi: 10.1117/12.876845
Proc. SPIE 7939, Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor, 793920 (4 March 2011); doi: 10.1117/12.876870
Proc. SPIE 7939, Enhanced hydrogen gas generation rate by n-GaN photoelectrode with immersed finger-type indium tin oxide ohmic contacts, 793925 (4 March 2011); doi: 10.1117/12.876436
Proc. SPIE 7939, High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon, 793927 (4 March 2011); doi: 10.1117/12.873170
Proc. SPIE 7939, Growth of GaN single crystals by a Ca- and Ba-added Na flux method, 79392A (4 March 2011); doi: 10.1117/12.875824
Proc. SPIE 7939, Measurement of nonuniform bowing in GaN/sapphire epi-wafers and subsequent stress analysis by using a theoretical model, 79392B (4 March 2011); doi: 10.1117/12.874127
Proc. SPIE 7939, Direct observation of lattice constant variations depending on layer structures in an InGaN/GaN MQW LED, 79392D (4 March 2011); doi: 10.1117/12.874626
Proc. SPIE 7939, Optimization of ZnO:Ga properties for application as a transparent conducting oxide in InGaN-based light-emitting diodes, 79392E (4 March 2011); doi: 10.1117/12.875515
Proc. SPIE 7939, Low-frequency noise measurements of generation-recombination effect and field-assisted emission in AlGaN/GaN MOSHFETs and HFETs, 79392F (4 March 2011); doi: 10.1117/12.875692
Proc. SPIE 7939, Low-frequency noise measurements of electrical stress in InAlN/GaN and AlGaN/GaN heterostructure field-effect transistors, 79392G (4 March 2011); doi: 10.1117/12.875723
Proc. SPIE 7939, Growth of crack-free semi-polar (1-101) GaN on a 7°-off (001) Si substrate by metal-organic chemical vapor deposition, 79392H (4 March 2011); doi: 10.1117/12.876356
Proc. SPIE 7939, Electrical properties of In-doped ZnO films grown by plasma-assisted molecular beam epitaxy on GaN(0001) template, 79392J (4 March 2011); doi: 10.1117/12.877210
Proc. SPIE 7939, Current spreading effect in vertical GaN/InGaN LEDs, 79392K (4 March 2011); doi: 10.1117/12.877663
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