PROCEEDINGS VOLUME 7953
SPIE OPTO | 22-27 JANUARY 2011
Novel In-Plane Semiconductor Lasers X
Proceedings Volume 7953 is from: Logo
SPIE OPTO
22-27 January 2011
San Francisco, California, United States
Front Matter
Proc. SPIE 7953, Front Matter: Volume 7953, 795301 (11 March 2011); doi: 10.1117/12.890416
Low Dimensional Materials
Proc. SPIE 7953, Quantum dot composite light sources, 795302 (17 February 2011); doi: 10.1117/12.875227
Proc. SPIE 7953, Gain and absorption characteristics of bilayer quantum dot lasers beyond 1.3 μm, 795303 (4 February 2011); doi: 10.1117/12.874214
Proc. SPIE 7953, Nanopatterned quantum dot active region lasers on InP substrates, 795304 (17 February 2011); doi: 10.1117/12.875199
Proc. SPIE 7953, The lateral ambipolar diffusion length in quantum dot lasers, 795306 (17 February 2011); doi: 10.1117/12.874474
Grating Coupled
Proc. SPIE 7953, Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers, 795308 (17 February 2011); doi: 10.1117/12.876454
Proc. SPIE 7953, Design and device characteristics of index-coupled wafer-level holographically patterned 1.3um quantum dot distributed feedback lasers, 795309 (17 February 2011); doi: 10.1117/12.873605
Proc. SPIE 7953, High power distributed feedback and Fabry-Perot Al-free laser diodes at 780nm for rubidium pumping, 79530A (17 February 2011); doi: 10.1117/12.873295
Proc. SPIE 7953, Narrow-linewidth distributed feedback lasers with laterally coupled ridge-waveguide surface gratings fabricated using nanoimprint lithography, 79530B (17 February 2011); doi: 10.1117/12.875317
Telecom/Datacom
Proc. SPIE 7953, Development of high-speed directly modulated DFB and DBR lasers with surface gratings, 79530D (17 February 2011); doi: 10.1117/12.875674
Proc. SPIE 7953, 1.55 μm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings, 79530E (17 February 2011); doi: 10.1117/12.874043
Proc. SPIE 7953, 40 Gbit/s directly modulated lasers: physics and application, 79530F (17 February 2011); doi: 10.1117/12.876137
Nitrides
Proc. SPIE 7953, Recent results of blue and green InGaN laser diodes for laser projection, 79530G (17 February 2011); doi: 10.1117/12.874757
Proc. SPIE 7953, Gain characteristics of deep UV AlGaN quantum wells lasers, 79530H (17 February 2011); doi: 10.1117/12.875079
Proc. SPIE 7953, Plasmonic cladding InGaN MQW laser diodes, 79530I (17 February 2011); doi: 10.1117/12.873929
Proc. SPIE 7953, High peak power picoseconds optical pulse generation from GaInN semiconductor diode lasers, 79530J (17 February 2011); doi: 10.1117/12.877030
Proc. SPIE 7953, Dynamics of GaN-based laser diodes from violet to green, 79530K (17 February 2011); doi: 10.1117/12.874996
Quantum Cascade Lasers I
Proc. SPIE 7953, The temperature dependence of key electro-optical characteristics for mid-infrared emitting quantum cascade lasers, 79530N (17 February 2011); doi: 10.1117/12.874197
THz Quantum Cascade Lasers I
Proc. SPIE 7953, High-temperature performance and broad continuous tunability of terahertz quantum-cascade lasers, 79530O (17 February 2011); doi: 10.1117/12.875686
Proc. SPIE 7953, Broadband semiconductor terahertz laser based on heterogeneous cascades, 79530P (17 February 2011); doi: 10.1117/12.874600
THz Lasers II
Proc. SPIE 7953, Monolithically integrated THz transceivers, 79530S (17 February 2011); doi: 10.1117/12.876800
Proc. SPIE 7953, Stimulated Smith-Purcell semiconductor THz sources, 79530T (17 February 2011); doi: 10.1117/12.874071
Proc. SPIE 7953, Upper limits on terahertz difference frequency generation power in quantum well heterostructures, 79530U (17 February 2011); doi: 10.1117/12.877492
High Power I
Proc. SPIE 7953, 670 nm nearly diffraction limited tapered lasers with more than 30% conversion efficiency and 1 W cw and 3 W pulsed output power, 79530Z (17 February 2011); doi: 10.1117/12.872411
Proc. SPIE 7953, Versatile 1 W narrow band 976 nm and 1064 nm light sources, 795310 (17 February 2011); doi: 10.1117/12.874608
Proc. SPIE 7953, 1W semiconductor based laser module with a narrow linewidth emitting near 1064nm, 795311 (17 February 2011); doi: 10.1117/12.873518
Mid-infrared Lasers
Proc. SPIE 7953, Room-temperature 4.0-μm broadened optical pumping injection cavity lasers, 795314 (17 February 2011); doi: 10.1117/12.875218
Proc. SPIE 7953, InGaAs/AlInAs quantum cascade laser sources based on intra-cavity second harmonic generation emitting in 2.6-3.6 micron range, 795315 (17 February 2011); doi: 10.1117/12.879232
Mid-infrared QCLs
Proc. SPIE 7953, High performance quantum cascade lasers with broadband gain spectra, 795317 (17 February 2011); doi: 10.1117/12.873854
Proc. SPIE 7953, 3.5 um strain balanced GaInAs/AlInAs quantum cascade lasers operating at room temperature, 79531A (17 February 2011); doi: 10.1117/12.882762
High Power II
Proc. SPIE 7953, Performance and reliability of high power 7xx nm laser diodes, 79531B (17 February 2011); doi: 10.1117/12.875842
Proc. SPIE 7953, Very high modulation efficiency two-sections tapered laser diode at 1060nm for free space optical communications, 79531C (17 February 2011); doi: 10.1117/12.873560
Proc. SPIE 7953, Compact ps-pulse laser source with free adjustable repetition rate and nJ pulse energy on microbench, 79531D (17 February 2011); doi: 10.1117/12.873242
Proc. SPIE 7953, Low-cost high-reliability 830nm single mode lasers for consumer electronics and CtP applications, 79531E (17 February 2011); doi: 10.1117/12.874891
High Power III
Proc. SPIE 7953, Mitigation of thermal lensing effect as a brightness limitation of high-power broad area diode lasers, 79531F (17 February 2011); doi: 10.1117/12.875849
Proc. SPIE 7953, Reliable operation of 976nm high power DFB broad area diode lasers with over 60% power conversion efficiency, 79531G (17 February 2011); doi: 10.1117/12.873781
Proc. SPIE 7953, A novel approach to finite-aperture tapered unstable resonator lasers, 79531I (17 February 2011); doi: 10.1117/12.872410
Proc. SPIE 7953, Control of slow axis mode behaviour with waveguide phase structures in semiconductor broad-area lasers, 79531J (17 February 2011); doi: 10.1117/12.881727
Mid-IR Lasers and Applications I
Proc. SPIE 7953, Recent results from broadly tunable external cavity quantum cascade lasers, 79531K (17 February 2011); doi: 10.1117/12.875093
Proc. SPIE 7953, Multi-watt level short wavelength quantum cascade lasers, 79531L (17 February 2011); doi: 10.1117/12.872739
Mid-IR Lasers and Applications II
Proc. SPIE 7953, Design and operation of mid-IR integrated DBR tunable lasers, 79531P (17 February 2011); doi: 10.1117/12.875680
Proc. SPIE 7953, Type-I GaSb based single lateral mode diode ridge lasers operating at room temperature in 3.1-3.2 μm spectral region, 79531Q (17 February 2011); doi: 10.1117/12.875307
Proc. SPIE 7953, Broad area lasers with folded-resonator geometry for integrated transverse mode selection, 79531R (17 February 2011); doi: 10.1117/12.873378
Proc. SPIE 7953, Near-infrared induced negative photoconductance and its relationship with optical quenching of mid-infrared quantum cascade lasers, 79531S (17 February 2011); doi: 10.1117/12.875910
Proc. SPIE 7953, Novel mid-IR quantum cascade laser waveguide coupling techniques, 79531T (17 February 2011); doi: 10.1117/12.875832
Poster Session
Proc. SPIE 7953, Comparison of gain measurement techniques for 1.3μm quantum dot lasers, 79531W (17 February 2011); doi: 10.1117/12.875148
Proc. SPIE 7953, Optical gain in erbium lithium niobate titanium diffused waveguides, 79531X (17 February 2011); doi: 10.1117/12.875296
Proc. SPIE 7953, Controlled intermixing of multiple quantum wells for broadly tunable integrated lasers, 79531Y (17 February 2011); doi: 10.1117/12.873579
Proc. SPIE 7953, Low threshold short cavity quantum cascade lasers, 79531Z (17 February 2011); doi: 10.1117/12.875960
Proc. SPIE 7953, Thermal investigation of mid-infrared quantum cascade lasers under quasi-continuous-wave operations, 795320 (17 February 2011); doi: 10.1117/12.875968
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