PROCEEDINGS VOLUME 7971
SPIE ADVANCED LITHOGRAPHY | FEB 27 - MAR 3 2011
Metrology, Inspection, and Process Control for Microlithography XXV
Proceedings Volume 7971 is from: Logo
SPIE ADVANCED LITHOGRAPHY
Feb 27 - Mar 3 2011
San Jose, California, United States
Front Matter
Proc. SPIE 7971, Front Matter: Volume 7971, 797101 (7 May 2011); doi: 10.1117/12.898587
Mask and Lithography Metrology
Proc. SPIE 7971, A holistic metrology approach: hybrid metrology utilizing scatterometry, CD-AFM, and CD-SEM, 797103 (29 March 2011); doi: 10.1117/12.881632
Proc. SPIE 7971, Litho process control via optimum metrology sampling while providing cycle time reduction and faster metrology-to-litho turn around time, 797105 (29 March 2011); doi: 10.1117/12.879218
Proc. SPIE 7971, Mask registration impact on intrafield on-wafer overlay performance, 797106 (29 March 2011); doi: 10.1117/12.879485
Proc. SPIE 7971, Application of mask process correction (MPC) to monitor and correct mask process drift, 797107 (29 March 2011); doi: 10.1117/12.879119
Scanning Probe Metrology
Proc. SPIE 7971, Sub-nanometer line width and line profile measurement for CD-SEM calibration by using STEM, 797108 (20 April 2011); doi: 10.1117/12.879036
Proc. SPIE 7971, Challenges of SEM-based critical dimension metrology of interconnect, 797109 (29 March 2011); doi: 10.1117/12.882183
Proc. SPIE 7971, Robust edge detection with considering three-dimensional sidewall feature by CD-SEM, 79710A (29 March 2011); doi: 10.1117/12.881194
Proc. SPIE 7971, Tool-to-tool matching issues due to photoresist shrinkage effects, 79710B (20 April 2011); doi: 10.1117/12.881400
Proc. SPIE 7971, Influence of the charging effect on the precision of measuring EUV mask features, 79710C (20 April 2011); doi: 10.1117/12.878728
Inspection
Proc. SPIE 7971, Optical illumination optimization for patterned defect inspection, 79710D (20 April 2011); doi: 10.1117/12.882313
Proc. SPIE 7971, Wafer noise models for defect inspection, 79710E (20 April 2011); doi: 10.1117/12.879477
Proc. SPIE 7971, Quantitative measurement of voltage contrast in SEM images for in-line resistance inspection of incomplete contact, 79710F (20 April 2011); doi: 10.1117/12.878739
Proc. SPIE 7971, Characterization of EUV resists for defectivity at 32nm, 79710G (20 April 2011); doi: 10.1117/12.881323
Proc. SPIE 7971, OPC verification and hotspot management for yield enhancement through layout analysis, 79710H (20 April 2011); doi: 10.1117/12.870395
Proc. SPIE 7971, A new methodology for TSV array inspection, 79710I (20 April 2011); doi: 10.1117/12.879379
LER/LWR
Proc. SPIE 7971, Statistical-noise effect on power spectrum of line-edge and line-width roughness with long-range correlation, 79710J (20 April 2011); doi: 10.1117/12.878582
Proc. SPIE 7971, Reduction of SEM noise and extended application to prediction of CD uniformity and its experimental validation, 79710K (20 April 2011); doi: 10.1117/12.879590
Proc. SPIE 7971, High-precision edge-roughness measurement of transistor gates using three-dimensional electron microscopy combined with marker-assisted image alignment, 79710M (20 April 2011); doi: 10.1117/12.878949
Proc. SPIE 7971, Mueller matrix ellipsometry of artificial non-periodic line edge roughness in presence of finite numerical aperture, 79710N (20 April 2011); doi: 10.1117/12.879518
Design-based Metrology
Proc. SPIE 7971, A CD-gap-free contour extraction technique for OPC model calibration, 79710O (20 April 2011); doi: 10.1117/12.878583
Proc. SPIE 7971, Fast and accurate calibration for OPC process-window model using inverse weight algorithm, 79710P (20 April 2011); doi: 10.1117/12.877489
Proc. SPIE 7971, Contact edge roughness (CER) characterization and modeling: effects of dose on CER and critical dimension (CD) variation, 79710Q (20 April 2011); doi: 10.1117/12.881592
New Directions
Proc. SPIE 7971, Hybrid CD metrology concept compatible with high-volume manufacturing, 79710S (20 April 2011); doi: 10.1117/12.870745
Proc. SPIE 7971, TSOM method for semiconductor metrology, 79710T (20 April 2011); doi: 10.1117/12.881620
SEM
Proc. SPIE 7971, Experimental validation of 2D profile photoresist shrinkage model, 79710W (20 April 2011); doi: 10.1117/12.881406
Proc. SPIE 7971, Surface modification of EUVL mask blanks by e-beam, 79710X (20 April 2011); doi: 10.1117/12.879452
Proc. SPIE 7971, High-throughput critical dimensions uniformity (CDU) measurement of two-dimensional (2D) structures using scanning electron microscope (SEM) systems, 79710Y (28 April 2011); doi: 10.1117/12.879910
Proc. SPIE 7971, Verification and extension of the MBL technique for photo resist pattern shape measurement, 79710Z (20 April 2011); doi: 10.1117/12.878960
Proc. SPIE 7971, A method for improving resolution of a scanning electron microscope for inspection of nanodevices, 797110 (20 April 2011); doi: 10.1117/12.879042
Scatterometry
Proc. SPIE 7971, Metrology characterization of spacer double patterning by scatterometry, 797111 (20 April 2011); doi: 10.1117/12.879900
Proc. SPIE 7971, Optical far field measurements applied to microroughness determination of periodic microelectronic structures, 797112 (20 April 2011); doi: 10.1117/12.879436
Proc. SPIE 7971, A holistic metrology approach: multi-channel scatterometry for complex applications, 797113 (20 April 2011); doi: 10.1117/12.881638
Proc. SPIE 7971, Diffraction based overlay re-assessed, 797114 (20 April 2011); doi: 10.1117/12.882353
Proc. SPIE 7971, Overlay measurements by Mueller polarimetry in the back focal plane, 797115 (20 April 2011); doi: 10.1117/12.879499
AFM and Standards
Proc. SPIE 7971, Nested uncertainties and hybrid metrology to improve measurement accuracy, 797116 (20 April 2011); doi: 10.1117/12.882411
Proc. SPIE 7971, Reconciling measurements in AFM reference metrology when using different probing techniques, 797117 (20 April 2011); doi: 10.1117/12.879516
Proc. SPIE 7971, New three-dimensional AFM for CD measurement and sidewall characterization, 797118 (20 April 2011); doi: 10.1117/12.879545
Proc. SPIE 7971, High-speed atmospheric imaging of semiconductor wafers using rapid probe microscopy, 797119 (20 April 2011); doi: 10.1117/12.879456
Proc. SPIE 7971, Artifacts of the AFM image due to the probe controlling parameters, 79711A (20 April 2011); doi: 10.1117/12.879774
Innovative Lithography Process Control: Joint Session with Conference 7973
Proc. SPIE 7971, High sensitive and fast scanner focus monitoring method using forbidden pitch pattern, 79711C (20 April 2011); doi: 10.1117/12.879802
Overlay
Proc. SPIE 7971, Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay, 79711D (20 April 2011); doi: 10.1117/12.879532
Proc. SPIE 7971, Accuracy of diffraction-based and image-based overlay, 79711E (20 April 2011); doi: 10.1117/12.880037
Proc. SPIE 7971, Investigation on accuracy of process overlay measurement, 79711F (20 April 2011); doi: 10.1117/12.880299
Proc. SPIE 7971, Improved overlay control using robust outlier removal methods, 79711G (20 April 2011); doi: 10.1117/12.879494
Proc. SPIE 7971, Wafer quality analysis of various scribe line mark designs, 79711H (20 April 2011); doi: 10.1117/12.881551
Lithography Process Control
Proc. SPIE 7971, Overlay and focus stability control for 28-nm nodes on immersion scanners, 79711M (20 April 2011); doi: 10.1117/12.879055
Proc. SPIE 7971, Towards 22 nm: fast and effective intra-field monitoring and optimization of process windows and CDU, 79711N (20 April 2011); doi: 10.1117/12.881657
Proc. SPIE 7971, Automatic optimization of metrology sampling scheme for advanced process control, 79711O (20 April 2011); doi: 10.1117/12.879375
Proc. SPIE 7971, CD uniformity improvement of through-pitch contact-hole patterning for advanced logic devices, 79711P (20 April 2011); doi: 10.1117/12.879589
Poster Session
Proc. SPIE 7971, Sensitivity of LWR and CD linearity to process conditions in active area, 79711Q (20 April 2011); doi: 10.1117/12.879322
Proc. SPIE 7971, Real-time detection system of defects on a photo mask by using the light scattering and interference method, 79711R (20 April 2011); doi: 10.1117/12.881685
Proc. SPIE 7971, Improved secondary electron extraction efficiency model for accurate measurement of narrow-space patterns using model-based library matching, 79711S (20 April 2011); doi: 10.1117/12.878745
Proc. SPIE 7971, Scatterometry simulator using GPU and evolutionary algorithm, 79711T (20 April 2011); doi: 10.1117/12.881505
Proc. SPIE 7971, Simulation of non-uniform wafer geometry and thin film residual stress on overlay errors, 79711U (20 April 2011); doi: 10.1117/12.879493
Proc. SPIE 7971, Study of scanner stage vibration by using scatterometry, 79711V (20 April 2011); doi: 10.1117/12.879342