Front Matter
Proc. SPIE 7972, Front Matter: Volume 7972, 797201 (29 April 2011); doi: 10.1117/12.899317
Invited Session
Proc. SPIE 7972, Critical challenges for EUV resist materials, 797202 (16 April 2011); doi: 10.1117/12.882955
Proc. SPIE 7972, Materials challenges for sub-20nm lithography, 797204 (16 April 2011); doi: 10.1117/12.882958
Novel Processing Special Topic: Negative-Tone Development I
Proc. SPIE 7972, Solvent development processing of chemically amplified resists: chemistry, physics, and polymer science considerations, 797205 (16 April 2011); doi: 10.1117/12.882959
Proc. SPIE 7972, Fundamental investigation of negative tone development (NTD) for the 22nm node (and beyond), 797206 (16 April 2011); doi: 10.1117/12.882843
Proc. SPIE 7972, Developer effect on the negative tone development process under low NILS conditions, 797207 (16 April 2011); doi: 10.1117/12.882141
EUV I: Joint Session with Conference 7969
Proc. SPIE 7972, Assessment of resist outgassing related EUV optics contamination for CAR and non-CAR material chemistries, 797208 (16 April 2011); doi: 10.1117/12.881215
Proc. SPIE 7972, Performance of EUV molecular resists based on fullerene derivatives, 797209 (16 April 2011); doi: 10.1117/12.879302
Proc. SPIE 7972, Characterizing polymer bound PAG-type EUV resist, 79720A (16 April 2011); doi: 10.1117/12.879394
Pitch Reduction and Double Patterning
Proc. SPIE 7972, Novel approaches to implement the self-aligned spacer double-patterning process toward 11-nm node and beyond, 79720B (16 April 2011); doi: 10.1117/12.878943
Proc. SPIE 7972, The resist-core spacer patterning process for fabrication of 2xnm node semiconductor devices, 79720C (16 April 2011); doi: 10.1117/12.877616
Proc. SPIE 7972, A novel double patterning approach for 30nm dense holes, 79720D (16 April 2011); doi: 10.1117/12.879374
Proc. SPIE 7972, Resist freezing process challenges of cross pattern applications, 79720E (16 April 2011); doi: 10.1117/12.881552
Proc. SPIE 7972, Photobase generator enabled pitch division: a progress report, 79720F (16 April 2011); doi: 10.1117/12.879861
Proc. SPIE 7972, Optimization of pitch-split double patterning photoresist for applications at the 16nm node, 79720G (16 April 2011); doi: 10.1117/12.881489
Resist Fundamentals
Proc. SPIE 7972, In situ dissolution analysis of EUV resists, 79720H (16 April 2011); doi: 10.1117/12.878670
Proc. SPIE 7972, Visualization of the develop process, 79720I (16 April 2011); doi: 10.1117/12.882185
Proc. SPIE 7972, Revisit pattern collapse for 14nm node and beyond, 79720K (16 April 2011); doi: 10.1117/12.880180
Proc. SPIE 7972, Characteristics of main chain decomposable STAR polymer for EUV resist, 79720L (16 April 2011); doi: 10.1117/12.879349
Novel Processing Special Topic: Negative-Tone Development II
Proc. SPIE 7972, Negative-tone imaging (NTI) at the 22nm node: process and material development, 79720M (16 April 2011); doi: 10.1117/12.879719
Proc. SPIE 7972, High volume manufacturing capability of negative tone development process, 79720N (16 April 2011); doi: 10.1117/12.879391
Proc. SPIE 7972, Patterning conventional photoresists in environmentally friendly silicone fluids, 79720O (16 April 2011); doi: 10.1117/12.879294
Proc. SPIE 7972, Patterning process study for 30nm hole, 79720P (16 April 2011); doi: 10.1117/12.880906
Proc. SPIE 7972, BARC surface property matching for negative-tone development of a conventional positive-tone photoresist, 79720Q (16 April 2011); doi: 10.1117/12.881508
Directed Self-Assembly I: Selected Semiconductor Applications: Joint Session with Conference 7970
Proc. SPIE 7972, Designing materials for advanced microelectronic patterning applications using controlled polymerization RAFT technology, 79720T (16 April 2011); doi: 10.1117/12.882960
Simulation of Lithographic Phenomena
Proc. SPIE 7972, Analysis of resist patterns for material and process design: parameter extraction from dose pitch matrices of line-width and edge roughness and cross-sectional SEM images, 79720U (16 April 2011); doi: 10.1117/12.879331
Proc. SPIE 7972, Stochastic acid-based quenching in chemically amplified photoresists: a simulation study, 79720V (16 April 2011); doi: 10.1117/12.879831
Proc. SPIE 7972, Meso-scale simulation of the line-edge structure based on resist polymer molecules by negative-tone process, 79720W (16 April 2011); doi: 10.1117/12.879587
Proc. SPIE 7972, Negative tone development: gaining insight through physical simulation, 79720Y (16 April 2011); doi: 10.1117/12.879506
Proc. SPIE 7972, Physical modeling of developable BARC at KrF, 79720Z (16 April 2011); doi: 10.1117/12.880980
EUV II: Joint Session with Conference 7969
Proc. SPIE 7972, Extendibility of EUV resists in the exposure wavelength from 13.5 down to 3.1 nm for next-generation lithography, 797210 (16 April 2011); doi: 10.1117/12.881665
Proc. SPIE 7972, Coefficient of thermal expansion (CTE) in EUV lithography: LER and adhesion improvement, 797211 (16 April 2011); doi: 10.1117/12.879509
Proc. SPIE 7972, EUV underlayer materials for 22nm HP and beyond, 797212 (16 April 2011); doi: 10.1117/12.881639
Novel Materials and Processing I
Proc. SPIE 7972, Impact of post-litho LWR smoothing processes on the post-etch patterning result, 797213 (16 April 2011); doi: 10.1117/12.881433
Proc. SPIE 7972, Developable BARC (DBARC) technology as a solution to today's implant lithography challenges, 797214 (16 April 2011); doi: 10.1117/12.881614
Proc. SPIE 7972, 193nm resist chemical modification induced by HBr cure plasma treatment: a TD-GC/MS outgassing study, 797215 (16 April 2011); doi: 10.1117/12.879390
Proc. SPIE 7972, Fundamental study on reaction mechanisms in chemically amplified extreme ultraviolet resists by using 61nm free-electron laser, 797217 (16 April 2011); doi: 10.1117/12.879358
Proc. SPIE 7972, Bound PAG resists: an EUV and electron beam lithography performance comparison of fluoropolymers, 797218 (16 April 2011); doi: 10.1117/12.884519
Novel Materials and Processing II
Proc. SPIE 7972, Addressing challenges in lithography using sub-millisecond post exposure bake of chemically amplified resists, 797219 (16 April 2011); doi: 10.1117/12.879288
Proc. SPIE 7972, Extending photo-patternable low-κ concept to 193nm lithography and e-beam lithography, 79721A (16 April 2011); doi: 10.1117/12.881571
Proc. SPIE 7972, Process capability of implementing ArF negative resist into production, 79721B (16 April 2011); doi: 10.1117/12.879316
Proc. SPIE 7972, Development of an inorganic nanoparticle photoresist for EUV, e-beam, and 193nm lithography, 79721C (16 April 2011); doi: 10.1117/12.879385
Poster Session: EUV
Proc. SPIE 7972, EUV negative-resist based on thiol-yne system, 79721E (16 April 2011); doi: 10.1117/12.879037
Proc. SPIE 7972, High-sensitivity EUV resists based on fluorinated polymers, 79721G (16 April 2011); doi: 10.1117/12.879568
Proc. SPIE 7972, Characterization of EUV irradiation effects on polystyrene derivatives studied by x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS), 79721H (16 April 2011); doi: 10.1117/12.879412
Proc. SPIE 7972, Ultra-thin-film EUV resists beyond 20nm lithography, 79721I (16 April 2011); doi: 10.1117/12.879303
Proc. SPIE 7972, Calculated reactivity analysis of photoacid generators for EUV resist, 79721J (16 April 2011); doi: 10.1117/12.878942
Poster Session: Negative Tone
Proc. SPIE 7972, Defect printability analysis in negative tone development lithography, 79721K (16 April 2011); doi: 10.1117/12.871048
Proc. SPIE 7972, A study on post-exposure delay of negative tone resist and its chemistry, 79721L (16 April 2011); doi: 10.1117/12.882072
Poster Session: Resist Fundamentals
Proc. SPIE 7972, Predicting resist sensitivity to chemical flare effects though use of exposure density gradient method, 79721M (16 April 2011); doi: 10.1117/12.881597
Proc. SPIE 7972, Deprotonation mechanism of poly(styrene-acrylate)-based chemically amplified resist, 79721N (16 April 2011); doi: 10.1117/12.879362
Proc. SPIE 7972, Diffusion of amines from resist to BARC layer, 79721O (16 April 2011); doi: 10.1117/12.879039
Proc. SPIE 7972, Reduction of micro-bridging defects for 193nm immersion resist, 79721P (16 April 2011); doi: 10.1117/12.881546
Proc. SPIE 7972, Study of major factors to affect photoresist profile on developable bottom anti-reflective coating process, 79721Q (16 April 2011); doi: 10.1117/12.879581
Proc. SPIE 7972, Photoinitiated polymerization of new hybrid monomer containing vinyl ether and (methyl) acryloyl groups, 79721R (16 April 2011); doi: 10.1117/12.879382