PROCEEDINGS VOLUME 7995
SEVENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 24-27 SEPTEMBER 2010
Seventh International Conference on Thin Film Physics and Applications
IN THIS VOLUME

0 Sessions, 112 Papers, 0 Presentations
Front Matter  (1)
SEVENTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS
24-27 September 2010
Shanghai, China
Front Matter
Proc. SPIE 7995, Front Matter: Volume 7995, 799501 (5 March 2011); doi: 10.1117/12.889047
Physics of Thin Film
Proc. SPIE 7995, Air-annealing effects on SiO2/ITO coating, 799502 (17 February 2011); doi: 10.1117/12.888408
Proc. SPIE 7995, Arsenic-doped narrow-gap HgCdTe epilayers studied by infrared modulation spectroscopy, 799503 (18 February 2011); doi: 10.1117/12.888532
Proc. SPIE 7995, Electronic and optical properties of Bi3.25La0.75Ti3O12 and SrBi2-xNdxNb2O9 perovskite-type ferroelectric materials, 799504 (18 February 2011); doi: 10.1117/12.888426
Proc. SPIE 7995, Preparation and photoelectric properties of poly(phenylethanone)- manganese phthalocyanine derivative for polymer photovoltaic cells, 799505 (18 February 2011); doi: 10.1117/12.888205
Proc. SPIE 7995, Study of TCR of TiW alloy films deposited by magnetron sputtering, 799506 (18 February 2011); doi: 10.1117/12.888281
Proc. SPIE 7995, Carrier and phonon dynamics in GaInNAs, 799507 (18 February 2011); doi: 10.1117/12.888156
Proc. SPIE 7995, New design concept of hard x-ray supermirrors for astronomical x-ray telescopes, 799508 (18 February 2011); doi: 10.1117/12.887371
Proc. SPIE 7995, Design of the chirped multilayer mirrors in extreme ultraviolet region for ultrafast applications, 799509 (18 February 2011); doi: 10.1117/12.888421
Proc. SPIE 7995, Effects of annealing on the structural properties of Cu(In,Ga)Se2 thin films prepared by RF sputtering, 79950A (18 February 2011); doi: 10.1117/12.888168
Proc. SPIE 7995, Broad flattop transparent photonic band in truncated photonic crystals composed of the symmetric unit cell, 79950B (18 February 2011); doi: 10.1117/12.888196
Proc. SPIE 7995, Photoelectric properties of a-Si/mesoporous ZnO tandem solar cells, 79950C (18 February 2011); doi: 10.1117/12.888204
Proc. SPIE 7995, Contact resistance in organic transistors with different structures, 79950D (18 February 2011); doi: 10.1117/12.888227
Proc. SPIE 7995, Crystallization of amorphous silicon films by a Nd:YAG laser and correlated surface morphology, 79950E (18 February 2011); doi: 10.1117/12.888222
Proc. SPIE 7995, Effect of silica doping on the stability of gasochromic films, 79950F (18 February 2011); doi: 10.1117/12.888323
Proc. SPIE 7995, Structural and electrical properties of PLZT (8/65/35) thin films prepared by MOD method, 79950G (18 February 2011); doi: 10.1117/12.888385
Proc. SPIE 7995, Ellipsometric study of ferroelectric Ba0.4Sr0.6-xMnxTiO3 ceramics from 0.7 to 4.7 eV, 79950H (18 February 2011); doi: 10.1117/12.888289
Proc. SPIE 7995, Estimation of donor and acceptor levels in Al-doped ZnTe layers from photoluminescence measurement, 79950I (18 February 2011); doi: 10.1117/12.888520
Proc. SPIE 7995, Optical properties of Ni(1-x)Mn(2+x)O4 films studied by spectroscopic ellipsometry, 79950J (18 February 2011); doi: 10.1117/12.888207
Proc. SPIE 7995, Optimization of triangle grating structures for light trapping in thin film silicon solar cells, 79950K (18 February 2011); doi: 10.1117/12.887556
Proc. SPIE 7995, Surface plasmon polaritons of multi-layered structures containing metamaterial, 79950L (18 February 2011); doi: 10.1117/12.888180
Proc. SPIE 7995, Influence of ion-doping on the photoelectric properties of mesoporous ZnO thin films, 79950M (18 February 2011); doi: 10.1117/12.888217
Proc. SPIE 7995, Research on the reflection coating at three wavelengths for primary reflector of the optical antenna in the laser communication systems, 79950N (18 February 2011); doi: 10.1117/12.888406
Proc. SPIE 7995, Analysis on the surface uniformity and edge recombination of single-crystalline silicon solar cells on electrical parameters, 79950O (18 February 2011); doi: 10.1117/12.888223
Proc. SPIE 7995, Thermal properties, optical and interface characterization of Mg/Co multilayers for the EUV range, 79950P (18 February 2011); doi: 10.1117/12.888261
Proc. SPIE 7995, The influence of micron-sized nodules on the electric-field districution in thin-film polarizers, 79950Q (18 February 2011); doi: 10.1117/12.887565
Proc. SPIE 7995, Optical spectroscopy of organic semiconductor monolayers, 79950R (18 February 2011); doi: 10.1117/12.888197
Proc. SPIE 7995, Optical and electrochemical properties of vanadium pentoxide porous film prepared by sol-gel technique, 79950S (18 February 2011); doi: 10.1117/12.888456
Proc. SPIE 7995, Comparative investigation of infrared optical absorption properties of silicon oxide, oxynitride and nitride films, 79950T (18 February 2011); doi: 10.1117/12.888194
Proc. SPIE 7995, Luminescence properties of Lu2O3: Tb film prepared by Pechini sol-gel method, 79950U (18 February 2011); doi: 10.1117/12.888174
Proc. SPIE 7995, FTIR and optical transmittance investigation of hydrophobic SiO2-Al2O3 composite films, 79950V (18 February 2011); doi: 10.1117/12.888185
Proc. SPIE 7995, Wideband reflector and bandpass filter by using a Ge subwavelength periodic membrane, 79950W (18 February 2011); doi: 10.1117/12.888278
Proc. SPIE 7995, Temperature dependence of optical properties in Sn0.925Mn0.075O2 film determined by transmittance spectra, 79950X (18 February 2011); doi: 10.1117/12.888311
Proc. SPIE 7995, Structure and luminescence properties of Tb3+-doped Lu3Al5O12 films prepared by Pechini sol-gel method, 79950Y (18 February 2011); doi: 10.1117/12.888433
Proc. SPIE 7995, Extreme ultraviolet reflective multilayers at 30.4nm, 79950Z (18 February 2011); doi: 10.1117/12.888159
Proc. SPIE 7995, Experiment study on laser damage characteristics of diamond-like carbon films, 799510 (18 February 2011); doi: 10.1117/12.888186
Proc. SPIE 7995, Temperature dependence of photoluminescence, Raman scattering, and transmittance spectra of anatase Ti1-xFexO2 nanocrystalline films, 799511 (18 February 2011); doi: 10.1117/12.888287
Proc. SPIE 7995, Preparation and optical properties of chemical bath deposited ZnS thin films, 799512 (18 February 2011); doi: 10.1117/12.888336
Proc. SPIE 7995, Influence of Mg-doped on the microstructure and oxygen storage capacity of Ce0.5Zr0.5O2, 799513 (18 February 2011); doi: 10.1117/12.888176
Proc. SPIE 7995, Electroluminescence from Si nanocrystals by annealing amorphous silicon carbide films, 799514 (18 February 2011); doi: 10.1117/12.888225
Proc. SPIE 7995, Oriented SnS thin films formed by nano-multilayer method, 799515 (18 February 2011); doi: 10.1117/12.888219
Proc. SPIE 7995, Study of designing minus filters based on rugate theory, 799516 (18 February 2011); doi: 10.1117/12.888187
Proc. SPIE 7995, Guided-mode resonance in tunable orthogonal grating, 799517 (18 February 2011); doi: 10.1117/12.887614
Proc. SPIE 7995, Optimized light trapping in thin film silicon solar cells by metal nanoparticle, 799518 (18 February 2011); doi: 10.1117/12.887555
Thin Film Materials
Proc. SPIE 7995, Innovations in structured thin film design and fabrication for optical applications, 799519 (18 February 2011); doi: 10.1117/12.888231
Proc. SPIE 7995, Preparation and Faraday rotation of Nd2O3 doped Fe2O3-SiO2 nano-composite films, 79951A (18 February 2011); doi: 10.1117/12.888331
Proc. SPIE 7995, Preparation and characterization of (110) diamond films used for field-effect transistors, 79951B (18 February 2011); doi: 10.1117/12.888210
Proc. SPIE 7995, Preparation and characterization of tungsten oxide thin films with high electrochromic performance, 79951C (18 February 2011); doi: 10.1117/12.887560
Proc. SPIE 7995, Effect of UV and vacuum treatment on stability of WO3 gas sensing films, 79951D (18 February 2011); doi: 10.1117/12.888224
Proc. SPIE 7995, Mg/B4C EUV multilayer by introducing Co as barrier layer, 79951E (18 February 2011); doi: 10.1117/12.888272
Proc. SPIE 7995, Preparation and characterization of free-standing Zr, PI and Zr/PI filter, 79951F (18 February 2011); doi: 10.1117/12.887562
Proc. SPIE 7995, Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering, 79951G (18 February 2011); doi: 10.1117/12.888246
Proc. SPIE 7995, High uniformity HgI2 thick film prepared by ultrasonic wave-assisted physical vapor deposition, 79951H (18 February 2011); doi: 10.1117/12.888221
Proc. SPIE 7995, Preparation and investigation of Fe2O3-SiO2-CTAB transparent nano-composite films, 79951I (18 February 2011); doi: 10.1117/12.888177
Proc. SPIE 7995, Studies on a novel structure of ZnO/AlN/ diamond for SAW device applications, 79951J (18 February 2011); doi: 10.1117/12.888220
Proc. SPIE 7995, Red electroluminescence of diamond thin films, 79951K (18 February 2011); doi: 10.1117/12.888163
Proc. SPIE 7995, Effects of texture on the properties of polycrystalline HgI2 films, 79951L (18 February 2011); doi: 10.1117/12.888212
Proc. SPIE 7995, Silicon nitride thin films deposited by DC pulse reactive magnetron sputtering, 79951M (18 February 2011); doi: 10.1117/12.888164