PROCEEDINGS VOLUME 8081
PHOTOMASK AND NGL MASK TECHNOLOGY XVIII | 13-15 APRIL 2011
Photomask and Next-Generation Lithography Mask Technology XVIII
PHOTOMASK AND NGL MASK TECHNOLOGY XVIII
13-15 April 2011
Yokohama, Japan
Front Matter
Proc. SPIE 8081, Front Matter: Volume 8081, 808101 (6 July 2011); doi: 10.1117/12.899897
Materials and Process I
Proc. SPIE 8081, Mask blank material optimization impact on leading-edge ArF lithography, 808102 (20 May 2011); doi: 10.1117/12.899909
FPD Photomasks
Proc. SPIE 8081, Growth mechanism and inhibition technologies of a contamination on the surface of photomask for longtime LCD-TFT lithography process, 808105 (22 April 2011); doi: 10.1117/12.897698
Proc. SPIE 8081, Particle free pellicle mounting inside of the large size photomask inspection system, 808106 (14 June 2011); doi: 10.1117/12.899906
Materials and Process II
Proc. SPIE 8081, Improvement of polymer type EB resist sensitivity and line edge roughness, 808107 (19 May 2011); doi: 10.1117/12.897792
Proc. SPIE 8081, 22nm node ArF lithography performance improvement by utilizing mask 3D topography: controlled sidewall angle, 808108 (20 May 2011); doi: 10.1117/12.899910
Writing Technologies
Proc. SPIE 8081, Advancing the charging effect correction with time-dependent discharging model, 808109 (20 May 2011); doi: 10.1117/12.899905
Proc. SPIE 8081, EB resolution capability with CP exposure, 80810A (22 April 2011); doi: 10.1117/12.897272
Inspection Tools and Technologies I
Proc. SPIE 8081, Practical mask inspection system with printability and pattern priority verification, 80810D (19 May 2011); doi: 10.1117/12.899487
Metrology Tool and Technologies I
Proc. SPIE 8081, New CD-SEM metrology method for the side wall angle measurement using multiple detectors, 80810G (19 May 2011); doi: 10.1117/12.899368
Lithography I
Proc. SPIE 8081, MRC optimization for EUV high NA imaging for the 32-nm HP technology node, 80810H (22 April 2011); doi: 10.1117/12.897221
DFM, EDA, and MDP
Proc. SPIE 8081, Mask data processing technique using GPU for reducing computer cost, 80810I (19 May 2011); doi: 10.1117/12.899496
Inspection Tools and Technologies II
Proc. SPIE 8081, The coherent EUV scatterometry microscope for actinic mask inspection and metrology, 80810K (22 April 2011); doi: 10.1117/12.896576
Metrology Tool and Technologies II
Proc. SPIE 8081, In-die job automation for PROVE, 80810L (20 May 2011); doi: 10.1117/12.899779
Lithography II
Proc. SPIE 8081, Evaluation of process variations on OPC model predictions, 80810O (23 May 2011); doi: 10.1117/12.897531
Proc. SPIE 8081, New yield-aware mask strategies, 80810P (19 May 2011); doi: 10.1117/12.899295
Proc. SPIE 8081, Defect printability of advanced binary film photomask, 80810Q (20 May 2011); doi: 10.1117/12.899899
Proc. SPIE 8081, Role of ellipsometry in DPT process characterization and impact of performance for contact holes, 80810R (20 May 2011); doi: 10.1117/12.899901
MDP
Proc. SPIE 8081, Elimination of lithographic hotspots which have been waived by means of pattern matching, 80810S (19 May 2011); doi: 10.1117/12.897527
Proc. SPIE 8081, Efficient method for SRAF rule determination, 80810T (20 May 2011); doi: 10.1117/12.899900
Proc. SPIE 8081, Model-based mask data preparation (MB-MDP) for ArF and EUV mask process correction, 80810U (19 May 2011); doi: 10.1117/12.898862
Mask Repair
Proc. SPIE 8081, RegC: a new registration control process for photomasks after pattern generation, 80810V (20 May 2011); doi: 10.1117/12.899904
Mask Degradation
Proc. SPIE 8081, Binary 193nm photomasks aging phenomenon study, 80810W (19 May 2011); doi: 10.1117/12.898867
Proc. SPIE 8081, 193-nm radiation durability study of MoSi binary mask and resulting lithographic performance, 80810X (19 May 2011); doi: 10.1117/12.899173
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