PROCEEDINGS VOLUME 8142
SPIE OPTICAL ENGINEERING + APPLICATIONS | 21-25 AUGUST 2011
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XIII
IN THIS VOLUME

0 Sessions, 41 Papers, 0 Presentations
Front Matter  (1)
CZT I  (3)
CdTe  (3)
CZT II  (2)
CZT III  (4)
CZT IV  (2)
Proceedings Volume 8142 is from: Logo
SPIE OPTICAL ENGINEERING + APPLICATIONS
21-25 August 2011
San Diego, California, United States
Front Matter
Proc. SPIE 8142, Front Matter: Volume 8142, 814201 (19 October 2011); doi: 10.1117/12.914887
CZT I
Proc. SPIE 8142, Hybrid contacts for CZT virtual Frisch-grid detectors, 814202 (23 September 2011); doi: 10.1117/12.896682
Proc. SPIE 8142, Illumination response of CdZnTe, 814205 (23 September 2011); doi: 10.1117/12.892398
Proc. SPIE 8142, Effects of the networks of subgrain boundaries on spectral responses of thick CdZnTe detectors, 814206 (23 September 2011); doi: 10.1117/12.896223
CdTe
Proc. SPIE 8142, Mapping the x-ray response of a CdTe sensor with small pixels using an x-ray microbeam and a single photon processing readout chip, 814208 (23 September 2011); doi: 10.1117/12.896796
Proc. SPIE 8142, Evaluation of characteristics of CdTe detector by laser pulses, 814209 (23 September 2011); doi: 10.1117/12.896585
Proc. SPIE 8142, High resolution CdTe x- and gamma-ray detectors with a laser-formed p-n junction, 81420B (28 September 2011); doi: 10.1117/12.895555
CZT II
Proc. SPIE 8142, Development of CZT detectors for x-ray and gamma-ray astronomy, 81420D (28 September 2011); doi: 10.1117/12.893595
Proc. SPIE 8142, Performance characteristics of pixelated CZT crystals used on the GammaTracker project, 81420F (28 September 2011); doi: 10.1117/12.894114
Scintillators and Alternative Semiconductor Materials
Proc. SPIE 8142, Surface and defect correlation studies on high resistivity 4H SiC bulk crystals and epitaxial layers for radiation detectors, 81420H (28 September 2011); doi: 10.1117/12.896637
Proc. SPIE 8142, Efficiency and decay time measurement of phosphors for x-ray framing cameras usable in harsh radiation background, 81420I (28 September 2011); doi: 10.1117/12.893840
Proc. SPIE 8142, Long-term room temperature stability of TlBr gamma detectors, 81420J (28 September 2011); doi: 10.1117/12.896713
Proc. SPIE 8142, Comparison of SEM and optical analysis of DT neutron tracks in CR-39 detectors, 81420K (28 September 2011); doi: 10.1117/12.896953
Optical Devices/Imaging
Proc. SPIE 8142, CMOS solid-state photomultipliers for high energy resolution calorimeters, 81420M (28 September 2011); doi: 10.1117/12.893766
Proc. SPIE 8142, A hybrid reflective/refractive/diffractive achromatic fiber-coupled radiation resistant imaging system for use in the Spallation Neutron Source (SNS), 81420N (28 September 2011); doi: 10.1117/12.894125
Proc. SPIE 8142, Cryogenic CMOS avalanche diodes for nuclear physics research, 81420O (28 September 2011); doi: 10.1117/12.893885
Proc. SPIE 8142, Prototype high detective quantum efficiency imaging panel based on a fiber-optic scintillation glass array (FOSGA) for megavoltage imaging, 81420P (28 September 2011); doi: 10.1117/12.896946
Methodology/Measurements
Proc. SPIE 8142, Covariance spectroscopy applied to nuclear radiation detection, 81420Q (14 September 2011); doi: 10.1117/12.896552
Proc. SPIE 8142, Transparent oxyhalide glass and glass ceramics for gamma-ray detection, 81420R (28 September 2011); doi: 10.1117/12.899353
Proc. SPIE 8142, Prompt neutron multiplicity measurements with portable detectors, 81420T (28 September 2011); doi: 10.1117/12.888656
Scintillators
Proc. SPIE 8142, Optical properties of halide and oxide scintillators, 81420U (28 September 2011); doi: 10.1117/12.894957
Proc. SPIE 8142, Performance of europium-doped strontium iodide, transparent ceramics and bismuth-loaded polymer scintillators, 81420W (28 September 2011); doi: 10.1117/12.896656
Scintillator Physics and Semiconductors
Proc. SPIE 8142, Towards an understanding of nonlinearity in scintillator detector materials, 81420X (28 September 2011); doi: 10.1117/12.896001
Proc. SPIE 8142, Dependence of nonproportionality in scintillators on diffusion of excitons and charge carriers, 81420Y (28 September 2011); doi: 10.1117/12.895038
Proc. SPIE 8142, Physics of scintillator nonproportionality, 814210 (28 September 2011); doi: 10.1117/12.895969
CZT III
Proc. SPIE 8142, Effects of a traveling magnetic field on vertical gradient freeze growth of cadmium zinc telluride, 814214 (28 September 2011); doi: 10.1117/12.896543
Proc. SPIE 8142, Growth, characterization and fabrication of thick detectors from as-grown Cd0.9Zn0.1Te:In by traveling heater method, 814215 (28 September 2011); doi: 10.1117/12.896351
Proc. SPIE 8142, Segregation and interface shape control during EDG growth of CZT crystals, 814216 (28 September 2011); doi: 10.1117/12.896542
Proc. SPIE 8142, Effects of thermal annealing on the structural properties of CdZnTe crystals, 814217 (28 September 2011); doi: 10.1117/12.894961
CZT IV
Proc. SPIE 8142, Etch pit density in single crystal CdZnTe and CdTe correlated with growth parameters, 81421A (28 September 2011); doi: 10.1117/12.895537
Proc. SPIE 8142, Fabrication and characterization of Cd0.9Zn0.1Te Schottky diodes for nuclear radiation detectors, 81421B (28 September 2011); doi: 10.1117/12.896640
Poster Session
Proc. SPIE 8142, Detector array with improved spatial resolution for digital radiographic system, 81421C (14 September 2011); doi: 10.1117/12.892545
Proc. SPIE 8142, Carrier transportation properties in M-p-n and Schottky CdTe diode detector, 81421D (28 September 2011); doi: 10.1117/12.896969
Proc. SPIE 8142, E-beam electron mobility study on CZT and CsI, 81421G (28 September 2011); doi: 10.1117/12.895263
Proc. SPIE 8142, Synthesis of a potential semiconductor neutron detector crystal LiGa(Se/Te)2: materials purity and compatibility effects, 81421H (28 September 2011); doi: 10.1117/12.894968
Proc. SPIE 8142, Computational assessment of the impact of gamma-ray detector material properties on spectroscopic performance, 81421K (28 September 2011); doi: 10.1117/12.897316
Proc. SPIE 8142, Melting and cooling processes in CdTe-ZnTe near the CdTe-rich side, 81421L (28 September 2011); doi: 10.1117/12.897628
Proc. SPIE 8142, Characterization of the surfaces of CdTe(111) single crystals after laser processing, 81421N (28 September 2011); doi: 10.1117/12.898417
Proc. SPIE 8142, Correlations of secondary phases (SPs) with mobility lifetime (μτe) of the electrons in CZT crystals using IR microscopy, 81421O (28 September 2011); doi: 10.1117/12.894643
Proc. SPIE 8142, Lithium and boron based semiconductors for thermal neutron counting, 81421P (28 September 2011); doi: 10.1117/12.899363
Proc. SPIE 8142, A large area X-ray imager with online linearization and noise suppression, 81421Q (28 September 2011); doi: 10.1117/12.899721
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