PROCEEDINGS VOLUME 8166
SPIE PHOTOMASK TECHNOLOGY | 19-22 SEPTEMBER 2011
Photomask Technology 2011
IN THIS VOLUME

0 Sessions, 107 Papers, 0 Presentations
Front Matter  (1)
Proceedings Volume 8166 is from: Logo
SPIE PHOTOMASK TECHNOLOGY
19-22 September 2011
Monterey, California, United States
Front Matter
Proc. SPIE 8166, Front Matter: Volume 8166, 816601 (3 November 2011); doi: 10.1117/12.917331
Invited Session
Proc. SPIE 8166, Mask Industry Assessment: 2011, 81660D (14 October 2011); doi: 10.1117/12.897308
Proc. SPIE 8166, Additional evidence of EUV blank defects first seen by wafer printing, 81660E (14 October 2011); doi: 10.1117/12.901555
EUV Infrastructure and Application I
Proc. SPIE 8166, Accelerating EUV learning with synchrotron light: mask roughness challenges ahead, 81660F (14 October 2011); doi: 10.1117/12.900488
Proc. SPIE 8166, Phase defect analysis with actinic full-field EUVL mask blank inspection, 81660G (14 October 2011); doi: 10.1117/12.898898
Proc. SPIE 8166, Printability of native blank defects and programmed defects and their stack structures, 81660H (14 October 2011); doi: 10.1117/12.897165
Proc. SPIE 8166, EUV mask absorber and multi-layer defect disposition techniques using computational lithography, 81660J (14 October 2011); doi: 10.1117/12.896981
Mask Business
Proc. SPIE 8166, Mask cycle time reduction for foundry projects, 81660K (27 September 2011); doi: 10.1117/12.896736
Simulation of Mask Making and Application
Proc. SPIE 8166, More than monitoring: advanced lithographic process tuning, 81660M (14 October 2011); doi: 10.1117/12.896416
Proc. SPIE 8166, Enabling virtual wafer CD (WCD) using inverse pattern rendering (IPR) of mask CD-SEM images, 81660O (14 October 2011); doi: 10.1117/12.896951
Proc. SPIE 8166, PPF-Explorer: pointwise proximity function calibration using a new radial symmetric calibration structure, 81660P (14 October 2011); doi: 10.1117/12.896759
Mask Data Preparation and Process Correction
Proc. SPIE 8166, OPC modeling and correction solutions for EUV lithography, 81660Q (14 October 2011); doi: 10.1117/12.899591
Proc. SPIE 8166, High speed mask inspection data prep flow based on pipelining, 81660R (14 October 2011); doi: 10.1117/12.896964
Proc. SPIE 8166, QoR analysis of fractured data solutions using distributed processing, 81660S (14 October 2011); doi: 10.1117/12.898853
Proc. SPIE 8166, Reducing shot count through optimization-based fracture, 81660T (14 October 2011); doi: 10.1117/12.897779
Proc. SPIE 8166, Application of signal reconstruction techniques to shot count reduction in simulation driven fracturing, 81660U (14 October 2011); doi: 10.1117/12.897051
Design for Manufacturability, and Optical Enhancements: SMO, OPC etc. I
Proc. SPIE 8166, SMO applied to contact layers at the 32nm node and below with consideration of MEEF and MRC, 81660V (14 October 2011); doi: 10.1117/12.896503
Proc. SPIE 8166, Evaluation of the accuracy of complex illuminator designs, 81660W (14 October 2011); doi: 10.1117/12.898899
Proc. SPIE 8166, Double patterning from design enablement to verification, 81660X (14 October 2011); doi: 10.1117/12.898895
Proc. SPIE 8166, Study on design rule verification procedure of semiconductor memory devices by using design based metrology (DBM), 81660Y (14 October 2011); doi: 10.1117/12.896129
EUV Infrastructure and Application II
Proc. SPIE 8166, Holistic lithography for EUV: NXE:3100 characterization of first printed wafers using an advanced scanner model and scatterometry, 81660Z (14 October 2011); doi: 10.1117/12.898955
Proc. SPIE 8166, Development status and infrastructure progress update of aerial imaging measurements on EUV masks, 816610 (14 October 2011); doi: 10.1117/12.899038
Proc. SPIE 8166, EUV mask preparation considering blank defects mitigation, 816611 (14 October 2011); doi: 10.1117/12.896996
Proc. SPIE 8166, Study of EUV mask e-beam inspection conditions for HVM, 816612 (24 January 2012); doi: 10.1117/12.899067
Mask Cleaning, Contamination, Haze, and Prevention I
Proc. SPIE 8166, A study on irregular growing defect mechanism and removal process, 816613 (14 October 2011); doi: 10.1117/12.898975
Proc. SPIE 8166, Megasonic cleaning: possible solutions for 22nm node and beyond, 816614 (14 October 2011); doi: 10.1117/12.898409
Proc. SPIE 8166, Extending CO2 cryogenic aerosol cleaning for advanced optical and EUV mask cleaning, 816615 (14 October 2011); doi: 10.1117/12.896962
Mask Processes, Substrates, and Materials I
Proc. SPIE 8166, Advanced electron beam resist requirements and challenges, 816616 (14 October 2011); doi: 10.1117/12.898901
Proc. SPIE 8166, High resolution mask process and substrate for 20nm and early 14nm node lithography, 816617 (14 October 2011); doi: 10.1117/12.898889
Proc. SPIE 8166, Phase-shifting effect of thin-absorber EUV masks, 816618 (14 October 2011); doi: 10.1117/12.895149
Proc. SPIE 8166, A study of closed-loop application: WLCD-CDC for 32nm and beyond reticles, 816619 (14 October 2011); doi: 10.1117/12.898892
Mask Pattern Generation I
Proc. SPIE 8166, The requirements for the future e-beam mask writer: statistical analysis of pattern accuracy, 81661B (14 October 2011); doi: 10.1117/12.896977
Proc. SPIE 8166, The trouble starts with using electrons: putting charging effect correction models to the test, 81661C (14 October 2011); doi: 10.1117/12.898755
Mask Metrology I
Proc. SPIE 8166, In-die photomask registration and overlay metrology with PROVE using 2D correlation methods, 81661E (14 October 2011); doi: 10.1117/12.896592
Proc. SPIE 8166, Evaluation of KLA-Tencor LMS IPRO5 beta system for 22nm node registration and overlay applications, 81661F (14 October 2011); doi: 10.1117/12.896850
Mask Inspection and Repair I
Proc. SPIE 8166, Repair of natural EUV reticle defects, 81661G (14 October 2011); doi: 10.1117/12.898864
Proc. SPIE 8166, EUVL mask inspection using 193nm wavelength for 30nm node and beyond, 81661H (14 October 2011); doi: 10.1117/12.898896
Proc. SPIE 8166, Efficiency and throughput improvement on defect disposition through automated defect classification, 81661I (14 October 2011); doi: 10.1117/12.896948
Proc. SPIE 8166, Clean and repair of EUV photomasks, 81661J (14 October 2011); doi: 10.1117/12.898503
Mask Cleaning, Contamination, Haze, and Prevention II
Proc. SPIE 8166, Challenges associated with advanced mask cleaning, 81661K (14 October 2011); doi: 10.1117/12.899055
Proc. SPIE 8166, Study on the soft defects related to dry etch process of phase shift mask, 81661L (14 October 2011); doi: 10.1117/12.896776
Proc. SPIE 8166, Effect of SPM-based cleaning POR on EUV mask performance, 81661M (14 October 2011); doi: 10.1117/12.896836
Proc. SPIE 8166, Scanning probe microscopy study of the tolerance of patterned EUV masks to megasonic cleaning, 81661N (14 October 2011); doi: 10.1117/12.898576
Proc. SPIE 8166, Effect of repetitive acid-based cleaning on EUV mask lifetime and lithographic performance, 81661O (14 October 2011); doi: 10.1117/12.896975
Mask Metrology II
Proc. SPIE 8166, EUV and x-ray scattering methods for CD and roughness measurement, 81661P (14 October 2011); doi: 10.1117/12.896847
Proc. SPIE 8166, Investigation of 3D patterns on EUV masks by means of scatterometry and comparison to numerical simulations, 81661Q (14 October 2011); doi: 10.1117/12.896839
Proc. SPIE 8166, Addressing 3D metrology challenges by using a multiple detector CDSEM, 81661R (14 October 2011); doi: 10.1117/12.896982
Proc. SPIE 8166, The assessment of the impact of mask pattern shape variation on the OPC-modeling by using SEM-contours from wafer and mask, 81661S (14 October 2011); doi: 10.1117/12.898843
NIL Infrastructure and Application I
Proc. SPIE 8166, 30nm full field quartz template replicated from Si master for FLASH active layer NIL, 81661U (14 October 2011); doi: 10.1117/12.898747
Proc. SPIE 8166, Fabrication of 20-nm half-pitch quartz template by nano-imprinting, 81661V (14 October 2011); doi: 10.1117/12.896504
Mask Processes, Substrates, and Materials II
Proc. SPIE 8166, Dry etching performance of advanced EUV mask blanks, 81661W (14 October 2011); doi: 10.1117/12.898815
Proc. SPIE 8166, The impact of a thinner binary mask absorber on 22nm and beyond mask inspectability and defect sensitivity, 81661Y (14 October 2011); doi: 10.1117/12.898295
Mask Pattern Generation II
Proc. SPIE 8166, Pattern placement error due to resist charging effect at 50kV e-beam writer: mechanism and its correction, 81661Z (14 October 2011); doi: 10.1117/12.898856
Proc. SPIE 8166, Enhancement of global CD correction and data processing in EB mask writer EBM-8000, 816620 (14 October 2011); doi: 10.1117/12.898846