PROCEEDINGS VOLUME 8241
SPIE LASE | 21-26 JANUARY 2012
High-Power Diode Laser Technology and Applications X
Proceedings Volume 8241 is from: Logo
SPIE LASE
21-26 January 2012
San Francisco, California, United States
Front Matter: Volume 8241
Proc. SPIE 8241, Front Matter: Volume 8241, 824101 (16 February 2012); doi: 10.1117/12.923572
High-Power Systems
Proc. SPIE 8241, Direct diode lasers with comparable beam quality to fiber, CO2, and solid state lasers, 824102 (9 February 2012); doi: 10.1117/12.907161
Proc. SPIE 8241, A 15-kW fiber-coupled diode laser for pumping applications, 824103 (31 January 2012); doi: 10.1117/12.906464
Proc. SPIE 8241, kW-class line sources for direct applications, 824105 (9 February 2012); doi: 10.1117/12.911816
Proc. SPIE 8241, 3000W CW diode laser cladding system, 824106 (9 February 2012); doi: 10.1117/12.909599
Laser Diode Reliability
Proc. SPIE 8241, Emission properties of diode laser bars during pulsed high-power operation, 824107 (9 February 2012); doi: 10.1117/12.905126
Proc. SPIE 8241, Scalable high-power and high-brightness fiber coupled diode laser devices, 824108 (9 February 2012); doi: 10.1117/12.909189
Proc. SPIE 8241, High performance diode lasers emitting at 780-820 nm, 824109 (9 February 2012); doi: 10.1117/12.910321
Proc. SPIE 8241, High-power single emitters for fiber laser pumping across 8xx nm-9xx nm wavelength bands, 82410A (9 February 2012); doi: 10.1117/12.909016
High-Power Packaging and Cooling
Proc. SPIE 8241, Modular VCSEL solution for uniform line illumination in the kW range, 82410B (9 February 2012); doi: 10.1117/12.906666
Proc. SPIE 8241, Hard solder 20-kW QCW stack array diode laser, 82410C (9 February 2012); doi: 10.1117/12.909772
Proc. SPIE 8241, Automated alignment of optical components for high-power diode lasers, 82410D (9 February 2012); doi: 10.1117/12.910173
Proc. SPIE 8241, Operating condition limitations of high density QCW arrays, 82410E (9 February 2012); doi: 10.1117/12.909097
Proc. SPIE 8241, Long pulse compact and high-brightness near 1-kW QCW diode laser stack, 82410F (9 February 2012); doi: 10.1117/12.908861
Proc. SPIE 8241, Record-brightness laser-diode bars for fiber coupling, 82410G (9 February 2012); doi: 10.1117/12.908673
Proc. SPIE 8241, High-power semiconductor laser array packaged on microchannel cooler using gold-tin soldering technology, 82410H (9 February 2012); doi: 10.1117/12.909655
Proc. SPIE 8241, Newly developed high-power laser diode bars, 82410I (9 February 2012); doi: 10.1117/12.905523
Proc. SPIE 8241, 10-W CW blue-violet diode laser array on the micro-channel cooler, 82410J (9 February 2012); doi: 10.1117/12.906506
High Brightness / Frequency Stabilized
Proc. SPIE 8241, Wavelength-stabilized fiber-coupled diode laser with 500-W output and 20-mm x mrad beam quality, 82410K (9 February 2012); doi: 10.1117/12.910303
Proc. SPIE 8241, Very high brightness diode laser, 82410L (16 February 2012); doi: 10.1117/12.908828
Proc. SPIE 8241, VBG controlled narrow bandwidth diode laser arrays, 82410M (9 February 2012); doi: 10.1117/12.909276
Proc. SPIE 8241, 10-W reliable 90-µm-wide broad area lasers with internal grating stabilization, 82410N (9 February 2012); doi: 10.1117/12.905252
Proc. SPIE 8241, High-brightness 975-nm pumps with ultra-stable wavelength stabilization, 82410O (9 February 2012); doi: 10.1117/12.905982
Proc. SPIE 8241, High-peak-power and high-brightness pulsed single and array diode laser sources, 82410P (9 February 2012); doi: 10.1117/12.907665
High-Power Laser Devices I
Proc. SPIE 8241, High-power diode laser pumps for alkali lasers (DPALs), 82410Q (9 February 2012); doi: 10.1117/12.908463
Proc. SPIE 8241, High-efficiency high-brightness diode lasers at 1470 nm/1550 nm for medical and defense applications, 82410R (9 February 2012); doi: 10.1117/12.905274
Proc. SPIE 8241, Slab-coupled optical waveguide lasers and amplifiers, 82410S (9 February 2012); doi: 10.1117/12.905028
Proc. SPIE 8241, High-power broad-area diode lasers optimized for fiber laser pumping, 82410T (9 February 2012); doi: 10.1117/12.906701
High-Power Laser Devices II
Proc. SPIE 8241, Progress in increasing the maximum achievable output power of broad area diode lasers, 82410U (9 February 2012); doi: 10.1117/12.905250
Proc. SPIE 8241, Compact sources for the generation of high-peak power wavelength-stabilized laser pulses in the picoseconds and nanoseconds ranges, 82410V (9 February 2012); doi: 10.1117/12.906320
Proc. SPIE 8241, High-efficiency kW-class QCW 88x-nm diode semiconductor laser bars with passive cooling, 82410W (9 February 2012); doi: 10.1117/12.910244
Proc. SPIE 8241, Extremely low losses 14xx single mode laser diode leading to 550-mW output power module with 0-75°C case temperature and 10-W consumption, 82410X (9 February 2012); doi: 10.1117/12.906405
Proc. SPIE 8241, Improvement of wall plug efficiency in near-infrared lateral single-mode LDs at high temperature, 82410Y (9 February 2012); doi: 10.1117/12.906503
High-Power Laser Devices III
Proc. SPIE 8241, Industrial high-power diode lasers: reliability, power, and brightness, 82410Z (9 February 2012); doi: 10.1117/12.906832
Proc. SPIE 8241, High-power single emitters and laser bars with improved performance developed at JENOPTIK, 824110 (9 February 2012); doi: 10.1117/12.910083
Proc. SPIE 8241, Advances in performance and beam quality of 9xx-nm laser diodes tailored for efficient fiber coupling, 824111 (9 February 2012); doi: 10.1117/12.908421
Proc. SPIE 8241, Comparative study of the performance of semiconductor laser based coherent Doppler lidars, 824112 (9 February 2012); doi: 10.1117/12.908800
Proc. SPIE 8241, Long wavelength surface-emitting distributed feedback (SE-DFB) laser for range finding applications, 824113 (9 February 2012); doi: 10.1117/12.909639
Proc. SPIE 8241, External-cavity high-power dual-wavelength tapered amplifier with tunable THz frequency difference, 824114 (9 February 2012); doi: 10.1117/12.908248
Poster Session
Proc. SPIE 8241, Experimental studies for improvement of thermal effects in a high-power fiber-coupled diode laser module operating at 808 nm, 824115 (9 February 2012); doi: 10.1117/12.901945
Proc. SPIE 8241, Physics of failure investigation in high-power broad-area InGaAs-AlGaAs strained quantum well lasers, 824116 (9 February 2012); doi: 10.1117/12.906436
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