PROCEEDINGS VOLUME 8242
SPIE LASE | 21-26 JANUARY 2012
Vertical External Cavity Surface Emitting Lasers (VECSELs) II
Proceedings Volume 8242 is from: Logo
SPIE LASE
21-26 January 2012
San Francisco, California, United States
Front Matter: Volume 8242
Proc. SPIE 8242, Front Matter: Volume 8242, 824201 (2 March 2012); doi: 10.1117/12.923573
Ultrafast VECSELs I
Proc. SPIE 8242, Picosecond to sub-picosecond pulse generation from mode-locked VECSELs at 1.55 µm, 824203 (15 February 2012); doi: 10.1117/12.905977
Proc. SPIE 8242, Passively mode-locked GaSb-based VECSELs emitting sub-400-fs pulses at 2 µm, 824204 (15 February 2012); doi: 10.1117/12.907399
Proc. SPIE 8242, Harmonically and fundamentally mode-locked InGaAs-AlGaAs disk laser generating pulse repetition rates in the 100 GHz or pulse durations in the 100-fs range, 824205 (15 February 2012); doi: 10.1117/12.907313
High Power
Proc. SPIE 8242, 20 Watt CW TEM00 intracavity doubled optically pumped semiconductor laser at 532 nm, 824206 (15 February 2012); doi: 10.1117/12.907511
Proc. SPIE 8242, High-power quantum dot semiconductor disk lasers, 824207 (15 February 2012); doi: 10.1117/12.905067
Proc. SPIE 8242, Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers, 824208 (15 February 2012); doi: 10.1117/12.906204
Proc. SPIE 8242, Strategies for power scaling VECSELs, 824209 (15 February 2012); doi: 10.1117/12.909369
Cavity Design
Proc. SPIE 8242, Wavelength tuning of VECSELs by cavity geometry, 82420B (14 February 2012); doi: 10.1117/12.909742
Single Frequency and Mid-IR
Proc. SPIE 8242, GaSb-based semiconductor disk lasers: recent advances in power scaling and narrow linewidth operation, 82420D (15 February 2012); doi: 10.1117/12.906420
Proc. SPIE 8242, 589-nm single-frequency VECSEL for sodium guidestar applications, 82420E (15 February 2012); doi: 10.1117/12.909697
Proc. SPIE 8242, Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm, 82420F (15 February 2012); doi: 10.1117/12.908738
Proc. SPIE 8242, Above 2-µm emitting GaSb-based semiconductor disk laser with <100-kHz linewidth at 1000-mW output power, 82420G (15 February 2012); doi: 10.1117/12.906380
Proc. SPIE 8242, IV-VI mid-infrared VECSEL on Si-substrate, 82420H (15 February 2012); doi: 10.1117/12.905643
Intracavity Nonlinear Conversion
Proc. SPIE 8242, VECSELs: non-equilibrium effects and two-color operation, 82420I (15 February 2012); doi: 10.1117/12.910273
Proc. SPIE 8242, Advances in narrow-linewidth continuous wave semiconductor disk laser pumped optical parametric oscillators, 82420J (15 February 2012); doi: 10.1117/12.905889
Proc. SPIE 8242, 2.7-µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL, 82420L (15 February 2012); doi: 10.1117/12.909355
Proc. SPIE 8242, UV laser emission around 330 nm via intracavity frequency doubling of a tunable red AlGaInP-VECSEL, 82420M (15 February 2012); doi: 10.1117/12.907902
Ultrafast VECSELs II
Proc. SPIE 8242, Multiphoton imaging with compact semiconductor disk lasers, 82420O (15 February 2012); doi: 10.1117/12.907456
Proc. SPIE 8242, Frequency-tuneable ultrashort pulse VECSEL sources, 82420P (15 February 2012); doi: 10.1117/12.906189
Active Region Design
Proc. SPIE 8242, Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance, 82420S (15 February 2012); doi: 10.1117/12.909412
Latest Concepts
Proc. SPIE 8242, Non-diffracting beams from surface-emitting lasers, 82420T (15 February 2012); doi: 10.1117/12.907913
Proc. SPIE 8242, Recent VECSEL developments for sensors applications, 82420W (15 February 2012); doi: 10.1117/12.910607
Poster Session
Proc. SPIE 8242, Characterization of gain parameters in quantum-dot and quantum-well based VECSEL structures, 82420X (15 February 2012); doi: 10.1117/12.905744
Proc. SPIE 8242, Wetting-layer-pumped continuous wave surface emitting quantum dot laser, 82420Y (15 February 2012); doi: 10.1117/12.906192
Proc. SPIE 8242, Sub-80-fs timing jitter of a stabilized SESAM modelocked VECSEL, 82420Z (15 February 2012); doi: 10.1117/12.906356
Proc. SPIE 8242, High-average power femtosecond VECSELs with tunable repetition rates up to 10 GHz, 824210 (15 February 2012); doi: 10.1117/12.907002
Proc. SPIE 8242, Strain compensation of InGaAs/GaAs SDL gain mirrors grown by molecular beam epitaxy, 824211 (15 February 2012); doi: 10.1117/12.908094
Proc. SPIE 8242, A wavelength tunable 2-ps pulse VECSEL, 824212 (15 February 2012); doi: 10.1117/12.908337
Proc. SPIE 8242, MBE growth of electrically pumped VECSELs, 824213 (15 February 2012); doi: 10.1117/12.908554
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