PROCEEDINGS VOLUME 8262
SPIE OPTO | 21-26 JANUARY 2012
Gallium Nitride Materials and Devices VII
IN THIS VOLUME

0 Sessions, 47 Papers, 0 Presentations
Front Matter  (1)
Growth I  (2)
Growth II  (1)
Doping  (4)
LEDs I  (4)
LEDs II  (2)
LEDs III  (1)
Proceedings Volume 8262 is from: Logo
SPIE OPTO
21-26 January 2012
San Francisco, California, United States
Front Matter
Proc. SPIE 8262, Front Matter: Volume 8262, 826201 (15 March 2012); doi: 10.1117/12.928727
Growth I
Proc. SPIE 8262, High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput, 826202 (23 February 2012); doi: 10.1117/12.903642
Proc. SPIE 8262, Pyramid nano-voids in GaN and InGaN, 826205 (23 February 2012); doi: 10.1117/12.912097
Growth II
Proc. SPIE 8262, GaN substrates with variable vicinal angles for laser diode applications, 826208 (28 February 2012); doi: 10.1117/12.906766
Doping
Proc. SPIE 8262, Carbon-doped p-type (0001) plane AlGaN (Al=0.06 to 0.55) with high hole density, 82620B (28 February 2012); doi: 10.1117/12.905301
Proc. SPIE 8262, High pressure annealing of Europium implanted GaN, 82620C (28 February 2012); doi: 10.1117/12.906810
Proc. SPIE 8262, A local vibration mode in a carbon doped (1-101)AlGaN, 82620D (28 February 2012); doi: 10.1117/12.905529
Proc. SPIE 8262, AlGaN polarization doping effects on the efficiency of blue LEDs, 82620E (28 February 2012); doi: 10.1117/12.904744
Material Characterization
Proc. SPIE 8262, Recombination and diffusion processes in polar and nonpolar bulk GaN investigated by time-resolved photoluminescence and nonlinear optical techniques, 82620G (28 February 2012); doi: 10.1117/12.906303
Proc. SPIE 8262, Auger effect in nonpolar quantum wells, 82620K (28 February 2012); doi: 10.1117/12.905955
Proc. SPIE 8262, Mg-hydrogen interaction in AlGaN alloys, 82620L (28 February 2012); doi: 10.1117/12.916073
Nano Structures and Devices I
Proc. SPIE 8262, Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz, 82620N (28 February 2012); doi: 10.1117/12.912041
Proc. SPIE 8262, Hardened planar nitride based cold cathode electron emitter, 82620O (28 February 2012); doi: 10.1117/12.909587
Proc. SPIE 8262, Influence of nanowire template morphology on the coalescence overgrowth of GaN nanowires on Si by molecular beam epitaxy, 82620P (28 February 2012); doi: 10.1117/12.907817
Nano Structures and Devices III
Proc. SPIE 8262, Electronic and thermal tuning of violet GaN coupled cavity laser, 82620W (28 February 2012); doi: 10.1117/12.909176
Proc. SPIE 8262, Lasing action in gallium nitride photonic quasicrystal nanorod arrays, 82620X (28 February 2012); doi: 10.1117/12.908308
Photovoltaic Devices
Proc. SPIE 8262, Concentrating properties of nitride-based solar cells using GaInN/GaInN superlattices, 82620Z (28 February 2012); doi: 10.1117/12.908226
Proc. SPIE 8262, High efficiency InGaN solar cell with a graded p-InGaN top layer, 826210 (28 February 2012); doi: 10.1117/12.905531
Proc. SPIE 8262, Temperature dependent behavior of the SPV for n-type GaN, 826213 (28 February 2012); doi: 10.1117/12.910289
Laser Diodes I
Proc. SPIE 8262, Analysis of the deep level responsible for the degradation of InGaN-based laser diodes by DLTS, 826215 (28 February 2012); doi: 10.1117/12.906551
Proc. SPIE 8262, Highly doped GaN: a material for plasmonic claddings for blue/green InGaN laser diodes, 826216 (28 February 2012); doi: 10.1117/12.906866
Proc. SPIE 8262, Estimation of the recombination coefficients in aged InGaN laser diodes, 826217 (28 February 2012); doi: 10.1117/12.907404
Laser Diodes II
Proc. SPIE 8262, Polarization of eigenmodes and the effect on the anisotropic gain in laser structures on nonpolar and semipolar GaN, 826218 (28 February 2012); doi: 10.1117/12.907865
Proc. SPIE 8262, Effect of ridge waveguide etch depth on laser threshold of InGaN MQW laser diodes, 826219 (28 February 2012); doi: 10.1117/12.908368
Proc. SPIE 8262, Modeling gallium-nitride-based violet lasers for data storage of information technology, 82621A (28 February 2012); doi: 10.1117/12.911793
LEDs I
Proc. SPIE 8262, Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate, 82621D (28 February 2012); doi: 10.1117/12.913250
Proc. SPIE 8262, Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion, 82621F (28 February 2012); doi: 10.1117/12.909633
Proc. SPIE 8262, The impact of active layer design on quantum efficiency of InGaN light emitting diodes, 82621G (10 February 2012); doi: 10.1117/12.903931
Proc. SPIE 8262, High-voltage thin GaN LEDs array, 82621H (28 February 2012); doi: 10.1117/12.912270
LEDs II
Proc. SPIE 8262, VLED for Si wafer-level packaging, 82621J (28 February 2012); doi: 10.1117/12.910062
Proc. SPIE 8262, Improved performance of 375 nm InGaN/AlGaN light-emitting diodes by incorporating a heavily Si-doped transition layer, 82621L (28 February 2012); doi: 10.1117/12.909580
LEDs III
Proc. SPIE 8262, Carbidonitride- and oxycarbidonitride-based phosphors for LED lighting devices, 82621O (28 February 2012); doi: 10.1117/12.906847
Novel Devices
Proc. SPIE 8262, Second harmonic generation in GaN-based photonic crystals for single molecule investigations, 82621R (28 February 2012); doi: 10.1117/12.905593
Poster Session
Proc. SPIE 8262, Impact of carrier localization, recombination, and diffusivity on excited state dynamics in InGaN/GaN quantum wells, 82621S (28 February 2012); doi: 10.1117/12.906488
Proc. SPIE 8262, Impact of indium surface segregation on optical properties of ultrathin InGaN/GaN quantum wells, 82621T (28 February 2012); doi: 10.1117/12.909423
Proc. SPIE 8262, Measurements of off-state electrical stress in InAlN/AlN/GaN heterostructure field-effect transistors with varying In compositions, 82621U (28 February 2012); doi: 10.1117/12.907515
Proc. SPIE 8262, AlGaN/GaN based field effect transistors for terahertz detection and imaging, 82621V (28 February 2012); doi: 10.1117/12.908236
Proc. SPIE 8262, Degradation analysis of InAlN/AlN/GaN heterostructure field-effect transistors using low-frequency noise and current-transient methods: hot-phonon effects, 82621W (28 February 2012); doi: 10.1117/12.908501
Proc. SPIE 8262, Investigation of emission polarization and strain in InGaN/GaN multiple quantum wells on nanorod epitaxially lateral overgrowth templates, 82621Y (28 February 2012); doi: 10.1117/12.906635
Proc. SPIE 8262, Free-standing a-plane GaN substrates grown by HVPE, 82621Z (28 February 2012); doi: 10.1117/12.907683
Proc. SPIE 8262, High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer, 826221 (28 February 2012); doi: 10.1117/12.908146
Proc. SPIE 8262, Reduction of efficiency droop in InGaN-based UV light-emitting diodes with InAlGaN barrier, 826222 (28 February 2012); doi: 10.1117/12.912226
Proc. SPIE 8262, Effect of MOCVD growth conditions on the optical properties of semipolar (1-101) GaN on Si patterned substrates, 826224 (28 February 2012); doi: 10.1117/12.909235
Proc. SPIE 8262, Degradation mechanism of InAlN/GaN based HFETs under high electric field stress, 826225 (28 February 2012); doi: 10.1117/12.903983
Proc. SPIE 8262, Electrical properties of ZnO:Ga as a transparent conducting oxide in InGaN based light emitting diodes, 826226 (28 February 2012); doi: 10.1117/12.903930
Proc. SPIE 8262, Effects of polarization fields on avalanche breakdown of AlGaN quantum-well photodiode, 826227 (28 February 2012); doi: 10.1117/12.910189
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