Proceedings Volume 8268 is from: Logo
SPIE OPTO
21-26 January 2012
San Francisco, California, United States
Front Matter
Proc. SPIE 8268, Front Matter: Volume 8268, 826801 (21 January 2012); doi: 10.1117/12.923925
Keynote Session
Proc. SPIE 8268, High power infrared QCLs: advances and applications, 826802 (21 January 2012); doi: 10.1117/12.916654
Plasmonics/Metamaterials I
Proc. SPIE 8268, Mid-infrared field concentration of electrically generated surface plasmons polaritons, 826803 (21 January 2012); doi: 10.1117/12.906738
Proc. SPIE 8268, Analytic calculation for scattering of electromagnetic waves by linear slot array, 826804 (21 January 2012); doi: 10.1117/12.913014
Proc. SPIE 8268, Binary nanoparticle dispersed metamaterial implementation and characterization, 826805 (21 January 2012); doi: 10.1117/12.915689
Plasmonics/Metamaterials II
Proc. SPIE 8268, Spectral filtering with subwavelength gratings: overview and latest advances, 826807 (21 January 2012); doi: 10.1117/12.914510
Proc. SPIE 8268, Semiconductor nanostructures towards optoelectronic device applications, 82680A (21 January 2012); doi: 10.1117/12.907968
New Spectroscopy Approaches
Proc. SPIE 8268, Quantum cascade laser enabled nano-liter polymer waveguide sensor, 82680D (21 January 2012); doi: 10.1117/12.905899
Proc. SPIE 8268, Sensitive detection of nitric oxide using a 5.26 μm external cavity quantum cascade laser based QEPAS sensor, 82680F (21 January 2012); doi: 10.1117/12.905621
Proc. SPIE 8268, Spectral selective absorption enhancement from stacked ultra-thin InGaAs/Si Fano resonance membranes, 82680G (21 January 2012); doi: 10.1117/12.907484
New IR Materials
Proc. SPIE 8268, III-V-N alloys grown by MOVPE in H2 and N2 mixed carrier gases, 82680I (21 January 2012); doi: 10.1117/12.907981
Proc. SPIE 8268, MBE Growth of Sb-based type-2 quantum dots for the application to long wavelength sensors, 82680J (21 January 2012); doi: 10.1117/12.908896
Proc. SPIE 8268, Study of the valence band offsets between InAs and InAs1-xSbx alloys, 82680K (21 January 2012); doi: 10.1117/12.907101
Quantum Cascade Lasers
Proc. SPIE 8268, Nonlinear GaInAs/AlInAs/InP quantum cascade laser sources for wavelength generation in the 2.7-70 μm wavelength range, 82680L (21 January 2012); doi: 10.1117/12.905863
Proc. SPIE 8268, Linewidth broadening caused by intrinsic temperature fluctuations in quantum cascade lasers, 82680M (21 January 2012); doi: 10.1117/12.907178
Proc. SPIE 8268, Substrate emission quantum cascade ring lasers with room temperature continuous wave operation, 82680N (21 January 2012); doi: 10.1117/12.913655
Proc. SPIE 8268, Active layer design and power calculation of nitride-based THz quantum cascade lasers, 82680O (21 January 2012); doi: 10.1117/12.914477
Nanowires Applications
Proc. SPIE 8268, GaN-based nanowire photodetectors, 82680P (21 January 2012); doi: 10.1117/12.914384
Proc. SPIE 8268, III-V nanowires by self-assembly MOVPE technology for novel and efficient opto-electronic and photovoltaic devices, 82680Q (21 January 2012); doi: 10.1117/12.908618
Proc. SPIE 8268, Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix, 82680S (21 January 2012); doi: 10.1117/12.914372
Type II Superlattices
Proc. SPIE 8268, Optimization of InAs/GaSb superlattice pin photodiode design for the high temperature operation in the midwave infrared range, 82680T (21 January 2012); doi: 10.1117/12.905976
Proc. SPIE 8268, High operating temperature XBn-InAsSb bariode detectors, 82680U (21 January 2012); doi: 10.1117/12.910174
Proc. SPIE 8268, Thermal distribution in high power optical devices with power-law thermal conductivity, 82680V (21 January 2012); doi: 10.1117/12.913568
Proc. SPIE 8268, Barrier engineering in quantum dots in a well detector, 82680W (21 January 2012); doi: 10.1117/12.909924
Proc. SPIE 8268, Low frequency noise in 1024x1024 long wavelength infrared focal plane array based on type-II InAs/GaSb superlattice, 82680X (21 January 2012); doi: 10.1117/12.913983
Proc. SPIE 8268, High-performance LWIR superlattice detectors and FPA based on CBIRD design, 82680Y (21 January 2012); doi: 10.1117/12.909614
Proc. SPIE 8268, World's first demonstration of type-II superlattice dual band 640x512 LWIR focal plane array, 82680Z (21 January 2012); doi: 10.1117/12.913662
Proc. SPIE 8268, Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors, 826810 (21 January 2012); doi: 10.1117/12.913980
Proc. SPIE 8268, Suppression of surface leakage in gate controlled type-II InAs/GaSb mid-infrared photodetectors, 826811 (21 January 2012); doi: 10.1117/12.913741
GaN Fundamentals
Proc. SPIE 8268, Optical properties of the periodic polarity-inverted GaN waveguides, 826814 (21 January 2012); doi: 10.1117/12.909831
Large Area GaSb Wafers and Epitaxy
Proc. SPIE 8268, Manufacturing of 100mm diameter GaSb substrates for advanced space based applications, 826817 (21 January 2012); doi: 10.1117/12.904777
Proc. SPIE 8268, Multiwafer production of epitaxy ready 4" GaSb substrates: requirements for epitaxially growth infrared detectors, 826818 (21 January 2012); doi: 10.1117/12.908303
Proc. SPIE 8268, Surface chemistry improvement of 100mm GaSb for advanced space based applications, 826819 (21 January 2012); doi: 10.1117/12.904778
Proc. SPIE 8268, Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates, 82681A (21 January 2012); doi: 10.1117/12.909571
Avalanche Photodiodes
Proc. SPIE 8268, Indirect time-of-flight 3D ranging based on SPADs, 82681C (21 January 2012); doi: 10.1117/12.908222
Proc. SPIE 8268, Planar technologies for SPAD arrays with improved performances, 82681D (21 January 2012); doi: 10.1117/12.908648
Interband IR Lasers
Proc. SPIE 8268, Quantum well lasers emitting between 3.0 and 3.4 μm for gas spectroscopy, 82681E (21 January 2012); doi: 10.1117/12.905881
Proc. SPIE 8268, Physics of interband cascade lasers, 82681F (21 January 2012); doi: 10.1117/12.914577
Proc. SPIE 8268, Silicon emission in and out resonant coupling with high Q optical mode, 82681G (21 January 2012); doi: 10.1117/12.914392
Proc. SPIE 8268, Coherent integration of photonics on silicon through the growth of nanostructures on GaP/Si, 82681H (21 January 2012); doi: 10.1117/12.910279
Proc. SPIE 8268, GaSb-based laser monolithically grown on Si substrate by molecular beam epitaxy, 82681I (21 January 2012); doi: 10.1117/12.908464
Quantum Optics I
Proc. SPIE 8268, Quantum optics with quantum dots in photonic nanowires, 82681J (21 January 2012); doi: 10.1117/12.904739
Proc. SPIE 8268, Anomalous evolution of quantum systems in the ultrastrong coupling regime, 82681M (21 January 2012); doi: 10.1117/12.916303
Spectroscopy and Security Applications
Proc. SPIE 8268, Standoff detection of explosives with broad band tunable external cavity quantum cascade lasers, 82681N (21 January 2012); doi: 10.1117/12.908119
Proc. SPIE 8268, Angle-resolved scattering spectroscopy of explosives using an external cavity quantum cascade laser, 82681O (21 January 2012); doi: 10.1117/12.908653
Proc. SPIE 8268, Detecting contamination with a QCL spectrometer, 82681P (21 January 2012); doi: 10.1117/12.905483
Proc. SPIE 8268, Hollow fiber based quantum cascade laser spectrometer for fast and sensitive drug identification, 82681Q (21 January 2012); doi: 10.1117/12.908018
Proc. SPIE 8268, Hyperspectral microscopy using an external cavity quantum cascade laser and its applications for explosives detection, 82681R (21 January 2012); doi: 10.1117/12.907488
Single Photon Detection
Proc. SPIE 8268, InGaAs/InP single-photon counting module running up to 133 MHz, 82681S (21 January 2012); doi: 10.1117/12.908406
Proc. SPIE 8268, Fast-gated single-photon detection module with 200 ps transitions running up to 50 MHz with 30 ps resolution, 82681U (21 January 2012); doi: 10.1117/12.908584
Proc. SPIE 8268, Spectral dependence of ultra-low dark count superconducting single photon detector for the evaluation of broadband parametric fluorescence, 82681V (21 January 2012); doi: 10.1117/12.906534
GaN LEDs
Proc. SPIE 8268, Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays, 82681X (21 January 2012); doi: 10.1117/12.914061
Proc. SPIE 8268, Flexible GaN LED on a polyimide substrate for display applications, 82681Y (21 January 2012); doi: 10.1117/12.904772
Proc. SPIE 8268, Light emitting diodes: the future lighting source with high efficiency, 82681Z (21 January 2012); doi: 10.1117/12.907976
Graphene
Proc. SPIE 8268, Oxygen sensors made by monolayer graphene, 826822 (21 January 2012); doi: 10.1117/12.907768
Quantum Optics II
Proc. SPIE 8268, Two-photon conductivity in semiconductors: a new tool for the study of the quantum properties of light, 826823 (21 January 2012); doi: 10.1117/12.913974
Proc. SPIE 8268, Semiconductor sources of two-photon states at room temperature in the telecom range, 826824 (21 January 2012); doi: 10.1117/12.914458