SPIE OPTO | 21-26 JANUARY 2012
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX

8 Sessions, 16 Papers, 0 Presentations
Front Matter  (1)
Proceedings Volume 8271 is from: Logo
21-26 January 2012
San Francisco, California, United States
Front Matter
Proc. SPIE 8271, Front Matter: Volume 8271, 827101 (21 March 2012);
Hybrid Structures
Proc. SPIE 8271, Effect of silver nanoparticles on the spectral properties of rare-earth ions in a sodium borate glass, 827104 (16 February 2012);
Proc. SPIE 8271, Optical properties of mesogen-coated gold nanoparticles, 827106 (16 February 2012);
Collodial Quantum Dots
Proc. SPIE 8271, Morphology, optical properties, charge transfer, and charge transport in nanocrystalline quantum dots, 827108 (23 February 2012);
Proc. SPIE 8271, Transport properties of mid-infrared colloidal quantum dot films, 827109 (23 February 2012);
Proc. SPIE 8271, Fourier spectroscopy on PbS quantum dots, 82710A (16 February 2012);
Optical Devices I
Proc. SPIE 8271, Single photon sources for quantum information applications, 82710D (23 February 2012);
Proc. SPIE 8271, Reducing dephasing in coupled quantum dot-cavity systems by engineering the carrier wavefunctions, 82710E (23 February 2012);
Novel Materials
Proc. SPIE 8271, Evolution of micro-spikes on silicon surface etched by femtosecond laser with different fabrication conditions, 82710I (23 February 2012);
Proc. SPIE 8271, Hyperspectral polarized light scattering for dense nanomaterials characterization, 82710J (23 February 2012);
Growth and Characterization
Proc. SPIE 8271, Semiconductor quantum nanostructures by droplet epitaxy, 82710L (23 February 2012);
Proc. SPIE 8271, The impact of growth rate and barrier thickness on the thermal stability of photoluminescence for coupled InAs/GaAs quantum dot heterostructures with quaternary(InAlGaAs) capping, 82710N (23 February 2012);
Proc. SPIE 8271, Ground state energy trend in single and multilayered coupled InAs/GaAs QDs capped with InGaAs layers: effect of thickness of InGaAs layer and the RTA treatment, 82710O (23 February 2012);
Proc. SPIE 8271, Increase in photoluminescence intensity of InAs columnar quantum dots on InP(001) substrate by increasing indium and phosphorous composition in InGaAsP barrier layers, 82710R (23 February 2012);
Optical Devices II
Proc. SPIE 8271, Improvement of temperature stability in columnar quantum dots by introducing side barriers with larger bandgap energy for semiconductor optical amplifiers, 82710S (23 February 2012);
Poster Session
Proc. SPIE 8271, Computational analysis of the effects of gain material inclusion in engineered metal nanostructures, 82710V (23 February 2012);
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