PROCEEDINGS VOLUME 8271
SPIE OPTO | 21-26 JANUARY 2012
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling IX
IN THIS VOLUME

0 Sessions, 16 Papers, 0 Presentations
Front Matter  (1)
Proceedings Volume 8271 is from: Logo
SPIE OPTO
21-26 January 2012
San Francisco, California, United States
Front Matter
Proc. SPIE 8271, Front Matter: Volume 8271, 827101 (21 March 2012); doi: 10.1117/12.931595
Hybrid Structures
Proc. SPIE 8271, Effect of silver nanoparticles on the spectral properties of rare-earth ions in a sodium borate glass, 827104 (16 February 2012); doi: 10.1117/12.905458
Proc. SPIE 8271, Optical properties of mesogen-coated gold nanoparticles, 827106 (16 February 2012); doi: 10.1117/12.906999
Collodial Quantum Dots
Proc. SPIE 8271, Morphology, optical properties, charge transfer, and charge transport in nanocrystalline quantum dots, 827108 (23 February 2012); doi: 10.1117/12.915540
Proc. SPIE 8271, Transport properties of mid-infrared colloidal quantum dot films, 827109 (23 February 2012); doi: 10.1117/12.906423
Proc. SPIE 8271, Fourier spectroscopy on PbS quantum dots, 82710A (16 February 2012); doi: 10.1117/12.905980
Optical Devices I
Proc. SPIE 8271, Single photon sources for quantum information applications, 82710D (23 February 2012); doi: 10.1117/12.912969
Proc. SPIE 8271, Reducing dephasing in coupled quantum dot-cavity systems by engineering the carrier wavefunctions, 82710E (23 February 2012); doi: 10.1117/12.905594
Novel Materials
Proc. SPIE 8271, Evolution of micro-spikes on silicon surface etched by femtosecond laser with different fabrication conditions, 82710I (23 February 2012); doi: 10.1117/12.915537
Proc. SPIE 8271, Hyperspectral polarized light scattering for dense nanomaterials characterization, 82710J (23 February 2012); doi: 10.1117/12.908713
Growth and Characterization
Proc. SPIE 8271, Semiconductor quantum nanostructures by droplet epitaxy, 82710L (23 February 2012); doi: 10.1117/12.910543
Proc. SPIE 8271, The impact of growth rate and barrier thickness on the thermal stability of photoluminescence for coupled InAs/GaAs quantum dot heterostructures with quaternary(InAlGaAs) capping, 82710N (23 February 2012); doi: 10.1117/12.907867
Proc. SPIE 8271, Ground state energy trend in single and multilayered coupled InAs/GaAs QDs capped with InGaAs layers: effect of thickness of InGaAs layer and the RTA treatment, 82710O (23 February 2012); doi: 10.1117/12.908050
Proc. SPIE 8271, Increase in photoluminescence intensity of InAs columnar quantum dots on InP(001) substrate by increasing indium and phosphorous composition in InGaAsP barrier layers, 82710R (23 February 2012); doi: 10.1117/12.907954
Optical Devices II
Proc. SPIE 8271, Improvement of temperature stability in columnar quantum dots by introducing side barriers with larger bandgap energy for semiconductor optical amplifiers, 82710S (23 February 2012); doi: 10.1117/12.907958
Poster Session
Proc. SPIE 8271, Computational analysis of the effects of gain material inclusion in engineered metal nanostructures, 82710V (23 February 2012); doi: 10.1117/12.908842
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