Proceedings Volume 8277 is from: Logo
SPIE OPTO
21-26 January 2012
San Francisco, California, United States
Front Matter
Proc. SPIE 8277, Front Matter: Volume 8277, 827701 (15 February 2012); doi: 10.1117/12.927872
New Material and Device Concepts I
Proc. SPIE 8277, Photo-pumped GaAs1−xBix lasing operation with low-temperature-dependent oscillation wavelength, 827702 (7 February 2012); doi: 10.1117/12.907098
Proc. SPIE 8277, Stacking-layer-number dependence of highly stacked InAs quantum dot laser diodes fabricated using strain-compensation technique, 827703 (9 February 2012); doi: 10.1117/12.907533
Proc. SPIE 8277, Electrically driven photonic crystal nanocavity lasers, LEDs, and modulators, 827705 (9 February 2012); doi: 10.1117/12.907432
Proc. SPIE 8277, Lateral cavity photonic crystal surface emitting lasers with ultralow threshold and large power, 827706 (9 February 2012); doi: 10.1117/12.906609
Pushing Performance Limits I
Proc. SPIE 8277, Red-emitting diode lasers with internal surface DBR gratings, 827708 (9 February 2012); doi: 10.1117/12.906737
Proc. SPIE 8277, 830nm high power single mode DFB laser for high volume applications, 82770A (9 February 2012); doi: 10.1117/12.910238
Proc. SPIE 8277, AlGaInAs semi-insulating buried-heterostructure distributed reflector lasers for low-driving-current high-speed direct modulation, 82770B (9 February 2012); doi: 10.1117/12.906607
Pushing Performance Limits II
Proc. SPIE 8277, Long-wavelength quantum dot FP and DFB lasers for high temperature applications, 82770C (9 February 2012); doi: 10.1117/12.905873
Proc. SPIE 8277, InAs/InP quantum dot based lasers and effect of optical feedback, 82770D (9 February 2012); doi: 10.1117/12.910177
Proc. SPIE 8277, Generation of picosecond pulses and optical frequency combs with multi-section 1065nm ridge waveguide diode lasers, 82770E (9 February 2012); doi: 10.1117/12.905745
Nitrides
Proc. SPIE 8277, (Al,In)GaN laser diodes with optimized ridge structures, 82770H (9 February 2012); doi: 10.1117/12.906741
Proc. SPIE 8277, Engineering of AlGaN-Delta-GaN quantum wells gain media for mid- and deep-ultraviolet lasers, 82770J (14 February 2012); doi: 10.1117/12.909165
Proc. SPIE 8277, Beyond blue pico laser: development of high power blue and low power direct green, 82770K (9 February 2012); doi: 10.1117/12.917469
Multi-wavelength, Tunable, and DFB QCLs
Proc. SPIE 8277, Dual-wavelength homogeneous mid-infrared quantum cascade laser, 82770R (9 February 2012); doi: 10.1117/12.906048
Proc. SPIE 8277, Continuous wave operation of distributed feedback quantum cascade lasers with low threshold voltage and low power consumption, 82770S (9 February 2012); doi: 10.1117/12.920055
Tunable QCLs and New Designs
Proc. SPIE 8277, Broadband continuous-wave tuning of external cavity anticrossed dual-upper-state quantum cascade lasers, 82770V (9 February 2012); doi: 10.1117/12.907535
Proc. SPIE 8277, Tapered active-region, mid-infrared quantum cascade lasers for complete suppression of carrier-leakage currents, 82770W (9 February 2012); doi: 10.1117/12.907439
New Material and Device Concepts II
Proc. SPIE 8277, Strained confinement layers in InP quantum dot lasers, 827711 (9 February 2012); doi: 10.1117/12.913613
External Cavity
Proc. SPIE 8277, Broadband modeless cw quantum-dot semiconductor laser: design and coherence properties, 827712 (9 February 2012); doi: 10.1117/12.909305
Proc. SPIE 8277, All semiconductor high power fs laser system with variable repetition rate, 827713 (9 February 2012); doi: 10.1117/12.907953
Proc. SPIE 8277, Continuously current-tunable, narrow line-width miniaturized external cavity diode laser at 633 nm, 827714 (9 February 2012); doi: 10.1117/12.905085
Proc. SPIE 8277, High-power single-mode InGaAsP/InP laser diodes for pulsed operation, 827715 (9 February 2012); doi: 10.1117/12.909162
Mid-infrared Lasers
Proc. SPIE 8277, Room-temperature type-I GaSb-based lasers in the 3.0 - 3.7 μm wavelength range, 82771B (9 February 2012); doi: 10.1117/12.905930
Proc. SPIE 8277, Optically pumped type-II mid-IR tunable DFB laser, 82771C (9 February 2012); doi: 10.1117/12.909033
Proc. SPIE 8277, Mid-IR interband cascade lasers operating at very low input powers, 82771D (9 February 2012); doi: 10.1117/12.914453
Proc. SPIE 8277, High performance interband cascade lasers at 3.8 microns, 82771E (9 February 2012); doi: 10.1117/12.910586
High Power I
Proc. SPIE 8277, Numerical studies of thermal lensing effects on high-CW-power single-spatial- mode diode lasers, 82771G (9 February 2012); doi: 10.1117/12.907212
Proc. SPIE 8277, Near-field evolution in strongly pumped broad area diode lasers, 82771H (9 February 2012); doi: 10.1117/12.905945
Proc. SPIE 8277, 100,000 h estimated lifetime of 100-μm-stripe width 650 nm broad area lasers at an output power of 1.2 W, 82771I (9 February 2012); doi: 10.1117/12.905069
Proc. SPIE 8277, Performance limitation and mitigation of longitudinal spatial hole burning in high-power diode lasers, 82771J (9 February 2012); doi: 10.1117/12.909524
Proc. SPIE 8277, High-power operation of a wide-striped InGaN laser diode array, 82771K (9 February 2012); doi: 10.1117/12.907936
High Power II
Proc. SPIE 8277, Wavelength tunable high-power single-mode 1060-nm DBR lasers, 82771L (9 February 2012); doi: 10.1117/12.907112
Proc. SPIE 8277, High efficiency laser sources usable for single mode fiber coupling and frequency doubling, 82771M (9 February 2012); doi: 10.1117/12.907843
Proc. SPIE 8277, Short pulse generation by Q-switching two section tapered lasers, 82771N (9 February 2012); doi: 10.1117/12.908604
Proc. SPIE 8277, Laser diodes with distributed feedback for application as subnanosecond fiber laser seeder, 82771O (9 February 2012); doi: 10.1117/12.909054
High-performance and High-power Mid-IR Lasers I
Proc. SPIE 8277, Long wavelength quantum cascade lasers for applications in the second atmospheric window at wavelength of 9-11 microns, 82771S (9 February 2012); doi: 10.1117/12.909556
High-performance and High-power Mid-IR Lasers II
Proc. SPIE 8277, 32 emitters quantum cascade laser phased array, 82771T (9 February 2012); doi: 10.1117/12.909198
Proc. SPIE 8277, Passive coherent beam combining of quantum-cascade lasers with a Dammann grating, 82771U (9 February 2012); doi: 10.1117/12.906717
Proc. SPIE 8277, 28-dB gain mid-infrared optical amplification using resonant quantum cascade laser optical amplifier, 82771W (9 February 2012); doi: 10.1117/12.905521
Poster Session
Proc. SPIE 8277, Modeling gallium-arsenide-based and indium-phosphide-based distributed feedback quantum-well lasers, 82771Y (9 February 2012); doi: 10.1117/12.907622
Proc. SPIE 8277, Direct intensity modulation of three-guide coupled rectangular ring laser having bidirectional lasing characteristics, 82771Z (9 February 2012); doi: 10.1117/12.908118
Proc. SPIE 8277, Effect of modulation p-doping on the differential carrier lifetime of quantum dot lasers, 827720 (9 February 2012); doi: 10.1117/12.908544
Proc. SPIE 8277, Anti reflection coatings in semiconductor lasers: effects on power emission and external cavity lasing, 827721 (9 February 2012); doi: 10.1117/12.909705
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