PROCEEDINGS VOLUME 8322
SPIE ADVANCED LITHOGRAPHY | 12-16 FEBRUARY 2012
Extreme Ultraviolet (EUV) Lithography III
Proceedings Volume 8322 is from: Logo
SPIE ADVANCED LITHOGRAPHY
12-16 February 2012
San Jose, California, United States
Front Matter
Proc. SPIE 8322, Front Matter: Volume 8322, 832201 (28 April 2012); doi: 10.1117/12.932385
Invited Session I
Proc. SPIE 8322, Progress in EUV lithography towards manufacturing from an exposure tool perspective, 832202 (14 March 2012); doi: 10.1117/12.917616
Proc. SPIE 8322, Pattern collapse mitigation strategies for EUV lithography, 832205 (14 March 2012); doi: 10.1117/12.915431
EUV: Joint Session with Conference 8325
Proc. SPIE 8322, Modeling and simulation of acid diffusion in chemically amplified resists with polymer-bound acid generator, 832206 (21 March 2012); doi: 10.1117/12.916293
Proc. SPIE 8322, Contact edge roughness and CD uniformity in EUV: effect of photo acid generator and sensitizer, 832207 (21 March 2012); doi: 10.1117/12.918033
Mask Defects
Proc. SPIE 8322, EUV mask multilayer defects and their printability under different multilayer deposition conditions, 832209 (21 March 2012); doi: 10.1117/12.916374
Proc. SPIE 8322, Printability study of pattern defects in the EUV mask as a function of hp nodes, 83220A (23 March 2012); doi: 10.1117/12.916052
Proc. SPIE 8322, Alternative smoothing techniques to mitigate EUV substrate defectivity, 83220B (23 March 2012); doi: 10.1117/12.916497
Proc. SPIE 8322, Closing the gap for EUV mask repair, 83220C (23 March 2012); doi: 10.1117/12.918322
Proc. SPIE 8322, A next-generation EMF simulator for EUV lithography based on the pseudo-spectral time-domain method, 83220D (23 March 2012); doi: 10.1117/12.916471
Proc. SPIE 8322, Analysis of EUV mask multilayer defect printing characteristics, 83220E (23 March 2012); doi: 10.1117/12.916411
EUV Sources
Proc. SPIE 8322, Development of laser-produced plasma-based EUV light source technology for HVM EUV lithography, 83220F (23 March 2012); doi: 10.1117/12.916093
Proc. SPIE 8322, Wavelength dependence of prepulse laser beams on EUV emission from CO2 reheated Sn plasma, 83220H (23 March 2012); doi: 10.1117/12.916161
Proc. SPIE 8322, Extreme ultraviolet and out-of-band radiation emission from a tin-droplet-based LPP source, 83220I (23 March 2012); doi: 10.1117/12.916367
Metrology and Inspection for EUVL: Joint Session with Conference 8324
Proc. SPIE 8322, Printability and inspectability of defects on EUV blank for 2xnm hp HVM application, 83220K (23 March 2012); doi: 10.1117/12.916021
Proc. SPIE 8322, Closing the infrastructure gap: status of the AIMS EUV project, 83220L (23 March 2012); doi: 10.1117/12.918691
Proc. SPIE 8322, Quantification of shot noise contributions to contact hole local CD nonuniformity, 83220M (23 March 2012); doi: 10.1117/12.916681
Mask Roughness and Cleaning
Proc. SPIE 8322, Impact of EUV mask surface roughness on LER, 83220N (23 March 2012); doi: 10.1117/12.916632
Proc. SPIE 8322, EUV mask line edge roughness, 83220O (23 March 2012); doi: 10.1117/12.916291
Proc. SPIE 8322, Using the transport of intensity equation to predict mask-induced speckle through focus, 83220P (23 March 2012); doi: 10.1117/12.917785
Proc. SPIE 8322, A multistep approach for reticle cleaning, 83220R (23 March 2012); doi: 10.1117/12.918034
Proc. SPIE 8322, Investigation of EUV haze defect: molecular behaviors of mask cleaning chemicals on EUV mask surfaces, 83220S (23 March 2012); doi: 10.1117/12.916499
EUV Resist I
Proc. SPIE 8322, High sensitivity chemically amplified EUV resists through enhanced EUV absorption, 83220T (23 March 2012); doi: 10.1117/12.916482
Proc. SPIE 8322, A new inorganic EUV resist with high-etch resistance, 83220U (23 March 2012); doi: 10.1117/12.916384
Proc. SPIE 8322, Tightly bound ligands for hafnium nanoparticle EUV resists, 83220V (23 March 2012); doi: 10.1117/12.917014
Proc. SPIE 8322, Evaluation of resist performance with EUV interference lithography for sub-22-nm patterning, 83220W (23 March 2012); doi: 10.1117/12.916541
Proc. SPIE 8322, Effects of out-of-band radiation on EUV resist performance, 83220X (23 March 2012); doi: 10.1117/12.916596
Proc. SPIE 8322, Out-of-band insensitive polymer-bound PAG for EUV resist, 83220Y (23 March 2012); doi: 10.1117/12.916355
Mask/Extendability
Proc. SPIE 8322, EUVL multilayer mask blank defect mitigation for defect-free EUVL mask fabrication, 83220Z (23 March 2012); doi: 10.1117/12.927018
Proc. SPIE 8322, Analytical treatment of the deformation behavior of EUVL masks during electrostatic chucking, 832210 (23 March 2012); doi: 10.1117/12.916530
Proc. SPIE 8322, Effect of radiation on the defectivity and stability of Ru-capped MoSi multilayer blanks, 832211 (23 March 2012); doi: 10.1117/12.916631
Proc. SPIE 8322, The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm, 832212 (23 March 2012); doi: 10.1117/12.917386
Proc. SPIE 8322, Wavelength selection for multilayer coatings for the lithography generation beyond EUVL, 832213 (23 March 2012); doi: 10.1117/12.918036
Proc. SPIE 8322, A 6.7-nm beyond EUV source as a future lithography source, 832214 (23 March 2012); doi: 10.1117/12.916351
Optics and Metrology
Proc. SPIE 8322, Development of EUV lithography tool technologies at Nikon, 832215 (23 March 2012); doi: 10.1117/12.917676
Proc. SPIE 8322, Low CoO grazing incidence collectors for EUVL HVM, 832216 (23 March 2012); doi: 10.1117/12.916157
Proc. SPIE 8322, Optical performance of LPP multilayer collector mirrors, 832217 (23 March 2012); doi: 10.1117/12.919735
Proc. SPIE 8322, Aerial image monitor for wavefront metrology of high-resolution EUV lithography tools, 832218 (23 March 2012); doi: 10.1117/12.916617
Proc. SPIE 8322, Subaperture phase reconstruction from a Hartmann wavefront sensor by phase retrieval method for application in EUV adaptive optics, 832219 (23 March 2012); doi: 10.1117/12.916154
EUV Resist II
Proc. SPIE 8322, Comparison study for 3x-nm contact hole CD uniformity between EUV lithography and ArF immersion double patterning, 83221A (23 March 2012); doi: 10.1117/12.916119
Proc. SPIE 8322, Key parameters of EUV resists for contact hole applications, 83221B (23 March 2012); doi: 10.1117/12.916837
Proc. SPIE 8322, Modeling the effects of acid amplifiers on photoresist stochastics, 83221C (23 March 2012); doi: 10.1117/12.917006
Proc. SPIE 8322, Calibration and verification of a stochastic model for EUV resist, 83221D (23 March 2012); doi: 10.1117/12.917804
Proc. SPIE 8322, Resist outgassing characterization for qualification in high power EUV lithography, 83221E (23 March 2012); doi: 10.1117/12.916347
Invited Session II
Proc. SPIE 8322, From performance validation to volume introduction of ASML's NXE platform, 83221G (23 March 2012); doi: 10.1117/12.916971
Proc. SPIE 8322, EUV resist performance: current assessment for sub-22-nm half-pitch patterning on NXE:3300, 83221J (23 March 2012); doi: 10.1117/12.918039
EUV Integration
Proc. SPIE 8322, Model calibration and slit position effect on full-mask process and proximity correction for extreme ultraviolet lithography, 83221K (23 March 2012); doi: 10.1117/12.916502
Proc. SPIE 8322, Model calibration and validation for pre-production EUVL, 83221L (23 March 2012); doi: 10.1117/12.916762
Proc. SPIE 8322, Development of practical flare correction tool for full chip in EUV lithography, 83221N (23 March 2012); doi: 10.1117/12.916129
Proc. SPIE 8322, Study on CD variation in the vicinity of the exposure field edge in EUV lithography, 83221O (23 March 2012); doi: 10.1117/12.916108
Poster Session: Mask
Proc. SPIE 8322, EUV actinic imaging tool aerial image evaluation of EUVL embedded phase shift mask performance, 83221P (23 March 2012); doi: 10.1117/12.919710
Proc. SPIE 8322, Phase defect mitigation strategy: fiducial mark requirements on extreme ultraviolet lithography mask, 83221Q (23 March 2012); doi: 10.1117/12.916141
Proc. SPIE 8322, Phase defect printability analyses: dependence of defect type and EUV exposure condition, 83221R (23 March 2012); doi: 10.1117/12.916387