Proceedings Volume 8324 is from: Logo
SPIE ADVANCED LITHOGRAPHY
12-16 February 2012
San Jose, California, United States
Front Matter
Proc. SPIE 8324, Front Matter: Volume 8324, 832401 (1 May 2012); doi: 10.1117/12.955793
Keynote Session
Proc. SPIE 8324, Can we get 3D-CD metrology right?, 832402 (5 April 2012); doi: 10.1117/12.916537
Proc. SPIE 8324, Inspection and metrology for through-silicon vias and 3D integration, 832403 (4 April 2012); doi: 10.1117/12.920301
Lithography Metrology and Inspection
Proc. SPIE 8324, Dose-focus monitor technique using CD-SEM and application to local variation analysis, 832405 (10 March 2012); doi: 10.1117/12.916413
Proc. SPIE 8324, Potential new CD metrology metric combined with data fusion for future node production, 832406 (4 April 2012); doi: 10.1117/12.916475
Proc. SPIE 8324, A comparison of alignment and overlay performance with varying hardmask materials, 832407 (4 April 2012); doi: 10.1117/12.917412
Proc. SPIE 8324, High-order wafer alignment in manufacturing, 832408 (4 April 2012); doi: 10.1117/12.916483
Overlay Topics in Advanced Optical Microlithography: Joint Session with Conference 8326
Proc. SPIE 8324, Overlay accuracy with respect to device scaling, 832409 (4 April 2012); doi: 10.1117/12.918017
Proc. SPIE 8324, New analytical algorithm for overlay accuracy, 83240A (4 April 2012); doi: 10.1117/12.918002
Inspection
Proc. SPIE 8324, ArFi lithogrphy optimization for thin OMOG reticle with fast aerial imaging, 83240B (4 April 2012); doi: 10.1117/12.918049
Proc. SPIE 8324, Transistor architecture impact on wafer inspection, 83240C (4 April 2012); doi: 10.1117/12.917009
Proc. SPIE 8324, Ultrahigh 22-nm resolution EUV coherent diffraction imaging using a tabletop 13-nm high harmonic source, 83240D (3 April 2012); doi: 10.1117/12.916524
Proc. SPIE 8324, Patterned defect and CD metrology by TSOM beyond the 22-nm node, 83240E (5 April 2012); doi: 10.1117/12.917236
Proc. SPIE 8324, Scatterfield microscopy of 22-nm node patterned defects using visible and DUV light, 83240F (5 April 2012); doi: 10.1117/12.917286
Proc. SPIE 8324, Multiple column high-throughput e-beam inspection (EBI), 83240G (5 April 2012); doi: 10.1117/12.927032
LER/LWR
Proc. SPIE 8324, Roughness metrology of gate all around silicon nanowire devices, 83240H (10 April 2012); doi: 10.1117/12.918402
Proc. SPIE 8324, High-throughput and non-destructive sidewall roughness measurement using 3-dimensional atomic force microscopy, 83240I (5 April 2012); doi: 10.1117/12.918377
Proc. SPIE 8324, Sensitivity analysis of line-edge roughness measured by means of scatterometry: a simulation-based investigation, 83240J (5 April 2012); doi: 10.1117/12.916348
Proc. SPIE 8324, Noise effects on contact-edge roughness and CD uniformity measurement, 83240K (5 April 2012); doi: 10.1117/12.918014
Metrology and Inspection for EUVL: Joint Session with Conference 8322
Proc. SPIE 8324, Investigation of the performance of state-of-the-art defect inspection tools within EUV lithography, 83240L (3 April 2012); doi: 10.1117/12.916979
Proc. SPIE 8324, Scatterometry metrology challenges of EUV, 83240M (5 April 2012); doi: 10.1117/12.916006
Scatterometry
Proc. SPIE 8324, Phase sensitive parametric optical metrology: exploring the limits of three-dimensional optical metrology, 83240N (5 April 2012); doi: 10.1117/12.916988
Proc. SPIE 8324, Investigation of E-beam patterned nanostructures using Mueller Matrix based Scatterometry, 83240O (5 April 2012); doi: 10.1117/12.916289
Proc. SPIE 8324, Accurate optical CD profiler based on specialized finite element method, 83240P (5 April 2012); doi: 10.1117/12.918055
Proc. SPIE 8324, Coherent Fourier scatterometry: tool for improved sensitivity in semiconductor metrology, 83240Q (3 April 2012); doi: 10.1117/12.916357
Proc. SPIE 8324, High-speed, full 3D feature metrology for litho monitoring, matching, and model calibration with scatterometry, 83240R (5 April 2012); doi: 10.1117/12.919050
Metrology and Inspection for Alternative Lithographic Technologies: Joint Session with Conference 8323
Proc. SPIE 8324, Challenges of SEM metrology at sub-10nm linewidth, 83240T (3 April 2012); doi: 10.1117/12.916679
Scanning Probe Metrology
Proc. SPIE 8324, Contour metrology using critical dimension atomic force microscopy, 83240U (3 April 2012); doi: 10.1117/12.918056
Proc. SPIE 8324, On CD-AFM bias related to probe bending, 83240V (3 April 2012); doi: 10.1117/12.916737
Accuracy and Standards
Proc. SPIE 8324, Sub-nanometer calibration of line width measurement and line edge detection by using STEM and sectional SEM, 83240X (3 April 2012); doi: 10.1117/12.916680
Proc. SPIE 8324, Profile variation impact on FIB cross-section metrology, 83240Y (6 April 2012); doi: 10.1117/12.917321
Proc. SPIE 8324, Automated S/TEM metrology on advanced semiconductor gate structures, 83240Z (3 April 2012); doi: 10.1117/12.916526
Proc. SPIE 8324, Compensation of CD-SEM image-distortion detected by View-Shift Method, 832410 (3 April 2012); doi: 10.1117/12.915770
Metrology and Inspection for TSV and 3D Integration
Proc. SPIE 8324, In-line metrology of 3D interconnect processes, 832411 (3 April 2012); doi: 10.1117/12.915810
Proc. SPIE 8324, Measuring thermally induced void growth in conformally filled through-silicon vias (TSVs) by laboratory x-ray microscopy, 832412 (3 April 2012); doi: 10.1117/12.916599
Proc. SPIE 8324, Through-silicon via plating void metrology using focused ion beam mill, 832413 (5 April 2012); doi: 10.1117/12.916561
Proc. SPIE 8324, Measurement of through silicon via etch profile by dark-field optical microscope, 832414 (6 April 2012); doi: 10.1117/12.916370
Proc. SPIE 8324, Wafer level warpage characterization of 3D interconnect processing wafers, 832415 (5 April 2012); doi: 10.1117/12.916591
Overlay
Proc. SPIE 8324, Overlay accuracy fundamentals, 832417 (5 April 2012); doi: 10.1117/12.916369
Proc. SPIE 8324, Size matters in overlay measurement, 832418 (5 April 2012); doi: 10.1117/12.918076
Proc. SPIE 8324, Feasibility study of matched machine overlay enhancement toward next-generation device development, 832419 (3 April 2012); doi: 10.1117/12.916968
Proc. SPIE 8324, Evaluation of a novel ultra small target technology supporting on-product overlay measurements, 83241A (3 April 2012); doi: 10.1117/12.916382
Proc. SPIE 8324, Application of DBM system to overlay verification and wiggling quantification for advanced process, 83241B (5 April 2012); doi: 10.1117/12.916110
Proc. SPIE 8324, Quality indicators of image-based overlay, 83241C (5 April 2012); doi: 10.1117/12.917995
SEM
Proc. SPIE 8324, Scanning-electron-microscope image processing for accurate analysis of line-edge and line-width roughness, 83241D (3 April 2012); doi: 10.1117/12.914230
Proc. SPIE 8324, Static and dynamic photoresist shrinkage effects in EUV photoresists, 83241E (5 April 2012); doi: 10.1117/12.916533
Proc. SPIE 8324, SEM metrology on bit patterned media nanoimprint template: issues and improvements, 83241F (3 April 2012); doi: 10.1117/12.918064
Proc. SPIE 8324, Methodology for establishing CD-SEM robust metrology algorithm for development cycles applications, 83241G (5 April 2012); doi: 10.1117/12.916492
Lithography Process Control
Proc. SPIE 8324, Data feed-forward for improved optical CD and film metrology, 83241H (5 April 2012); doi: 10.1117/12.916405
Proc. SPIE 8324, Faster diffraction-based overlay measurements with smaller targets using 3D gratings, 83241I (5 April 2012); doi: 10.1117/12.916747
Proc. SPIE 8324, Novel prediction methodology for etched hole patterning failure, 83241J (5 April 2012); doi: 10.1117/12.916029
Proc. SPIE 8324, Optimization of blended virtual and actual metrology schemes, 83241K (5 April 2012); doi: 10.1117/12.916313
Proc. SPIE 8324, Lithography process control using in-line metrology, 83241L (5 April 2012); doi: 10.1117/12.916372
Novel Technologies and Late Breaking News
Proc. SPIE 8324, Bridging CD metrology gaps of advanced patterning with assistance of nanomolding, 83241M (5 April 2012); doi: 10.1117/12.916854
Proc. SPIE 8324, Scanning electron microscopy imaging of ultra-high aspect ratio hole features, 83241N (5 April 2012); doi: 10.1117/12.916552