Front Matter
Proc. SPIE 8325, Front Matter: Volume 8325, 832501 (1 May 2012); doi: 10.1117/12.961926
Keynote Session
Proc. SPIE 8325, Factors that determine the optimum dose for sub-20nm resist systems: DUV, EUV, and e-beam options, 832503 (8 March 2012); doi: 10.1117/12.920024
Negative Tone Processing
Proc. SPIE 8325, Optical performance comparison between negative tone development and positive tone development, 832504 (3 April 2012); doi: 10.1117/12.915931
Proc. SPIE 8325, Functional resist materials for negative tone development in advanced lithography, 832505 (8 March 2012); doi: 10.1117/12.916281
Proc. SPIE 8325, Evolution of negative tone development photoresists for ArF lithography, 832507 (20 March 2012); doi: 10.1117/12.916633
EUV: Joint Session with Conference 8322
Proc. SPIE 8325, Optimization of low-diffusion EUV resist for linewidth roughness and pattern collapse on various substrates, 832508 (20 March 2012); doi: 10.1117/12.917807
Proc. SPIE 8325, EUV resist materials for 20nm and below half-pitch applications, 832509 (8 March 2012); doi: 10.1117/12.916378
Proc. SPIE 8325, EUV resist development for 16nm half pitch, 83250A (8 March 2012); doi: 10.1117/12.916555
Optical Extensions
Proc. SPIE 8325, Overview: continuous evolution on double-patterning process, 83250B (8 March 2012); doi: 10.1117/12.915695
Proc. SPIE 8325, CD uniformity improvement on the self-aligned spacer double-patterning process by resist material modification, 83250C (20 March 2012); doi: 10.1117/12.916321
Proc. SPIE 8325, SADP for BEOL using chemical slimming with resist mandrel for beyond 22nm nodes, 83250D (15 March 2012); doi: 10.1117/12.916952
Proc. SPIE 8325, Comparison of directed self-assembly integrations, 83250G (15 March 2012); doi: 10.1117/12.916406
Simulation of Resist Processes
Proc. SPIE 8325, Application of stochastic modeling to resist optimization problems, 83250H (15 March 2012); doi: 10.1117/12.916518
Proc. SPIE 8325, Correlated surface roughening during photoresist development, 83250I (15 March 2012); doi: 10.1117/12.915360
Proc. SPIE 8325, Mesoscale simulation of the line-edge structure during positive and negative tone resist development process, 83250J (15 March 2012); doi: 10.1117/12.916389
Proc. SPIE 8325, Line-pattern collapse mitigation status for EUV at 32nm HP and below, 83250K (19 March 2012); doi: 10.1117/12.916310
Proc. SPIE 8325, Simultaneous calibration of acid diffusion and developer loading parameters for computational lithography, 83250L (15 March 2012); doi: 10.1117/12.916200
Resist Fundamentals
Proc. SPIE 8325, Investigation of acid diffusion during laser spike annealing with systematically designed photoacid generators, 83250M (19 March 2012); doi: 10.1117/12.916318
Proc. SPIE 8325, Deprotection reaction kinetics in chemically amplified photoresists determined by sub-millisecond post exposure bake, 83250N (19 March 2012); doi: 10.1117/12.916605
Proc. SPIE 8325, Contrast improvement with balanced diffusion control of PAG and PDB, 83250O (19 March 2012); doi: 10.1117/12.915802
Proc. SPIE 8325, An in situ analysis of the resist pattern formation process, 83250P (19 March 2012); doi: 10.1117/12.916343
Proc. SPIE 8325, Understanding dissolution behavior of 193nm photoresists in organic solvent developers, 83250Q (19 March 2012); doi: 10.1117/12.918045
Proc. SPIE 8325, Critical material properties for pattern collapse mitigation, 83250R (20 March 2012); doi: 10.1117/12.916364
Proc. SPIE 8325, Accelerated purge drying to prevent pattern collapse without surfactant rinse for high-aspect ratio resist patterns, 83250S (19 March 2012); doi: 10.1117/12.916322
Novel Materials and Processing I
Proc. SPIE 8325, Investigation of pattern wiggling for spin-on organic hardmask materials, 83250T (20 March 2012); doi: 10.1117/12.915698
Proc. SPIE 8325, Spin-on-carbon-hardmask with high wiggling resistance, 83250U (19 March 2012); doi: 10.1117/12.916128
Proc. SPIE 8325, Substrate and underlayer dependence of sub-32nm e-beam HSQ pillar patterning process for RRAM application, 83250V (20 March 2012); doi: 10.1117/12.915474
Proc. SPIE 8325, Conductive layer for charge dissipation during electron-beam exposures, 83250X (20 March 2012); doi: 10.1117/12.916756
Lithography at the Intersection of Optics and Chemistry: Joint Session with Conference 8326
Proc. SPIE 8325, The saga of lambda: spectral influences throughout lithography generations, 83250Z (20 March 2012); doi: 10.1117/12.920025
EUV Materials, Processing, and Analysis
Proc. SPIE 8325, Patterning development in spin-on hard mask systems for 30nm half-pitch EUV technology, 832511 (20 March 2012); doi: 10.1117/12.916149
Proc. SPIE 8325, The novel spin-on hard mask and ultrathin UL material for EUVL, 832512 (28 March 2012); doi: 10.1117/12.916328
Proc. SPIE 8325, EUV resist processing with flash-lamp, 832513 (20 March 2012); doi: 10.1117/12.916342
Proc. SPIE 8325, Stable, fluorinated acid amplifiers for use in EUV lithography, 832514 (20 March 2012); doi: 10.1117/12.917015
Novel Materials and Processing II
Proc. SPIE 8325, CD error budget analysis for self-aligned multiple patterning, 832517 (20 March 2012); doi: 10.1117/12.916280
Proc. SPIE 8325, Demonstration of 22nm SRAM features with patternable hafnium oxide-based resist material using electron-beam lithography, 832518 (19 March 2012); doi: 10.1117/12.917814
Proc. SPIE 8325, Direct implant through BARC, 832519 (19 March 2012); doi: 10.1117/12.916132
Proc. SPIE 8325, Focus improvement with NIR absorbing underlayer attenuating substructure reflectivity, 83251A (20 March 2012); doi: 10.1117/12.916240
Proc. SPIE 8325, Design, synthesis, and characterization of KrF negative developable bottom anti-reflective coating materials, 83251B (19 March 2012); doi: 10.1117/12.916158
Poster Session: EUV Materials
Proc. SPIE 8325, Limitation of blend type of resist platform on EUV lithography, 83251D (20 March 2012); doi: 10.1117/12.912728
Proc. SPIE 8325, Theoretical study on structural effects of polymer ionization for EUV resist, 83251F (19 March 2012); doi: 10.1117/12.915696
Proc. SPIE 8325, Investigation of correlation with the octanol water partition coefficient and the sensitivity of negative-tone molecular resists, 83251G (19 March 2012); doi: 10.1117/12.916145
Proc. SPIE 8325, A novel single-component resist based on poly (4-hydroxylstyrene) applicable for EUV lithography, 83251H (20 March 2012); doi: 10.1117/12.916970
Poster Session: Fundamentals
Proc. SPIE 8325, Defining and measuring development rates for a stochastic resist, 83251K (20 March 2012); doi: 10.1117/12.916195
Proc. SPIE 8325, Diffusion of acid from resist to Si-hardmask layer, 83251L (19 March 2012); doi: 10.1117/12.915935
Proc. SPIE 8325, LWR reduction by photoresist formulation optimization for 193nm immersion lithography, 83251M (28 March 2012); doi: 10.1117/12.916602
Proc. SPIE 8325, Observation of swelling behavior of ArF resist during development by using QCM method, 83251N (19 March 2012); doi: 10.1117/12.916038
Proc. SPIE 8325, Study of the lithography characteristics of novolak resist at different PAC concentrations, 83251O (19 March 2012); doi: 10.1117/12.916037
Poster Session: Novel Resist Materials
Proc. SPIE 8325, Synthesis and photopolymerization kinetics of a novel oxime ester sulfonic acid photoacid generator, 83251Q (20 March 2012); doi: 10.1117/12.916239
Proc. SPIE 8325, Synthesis of stable acid amplifiers that produce strong highly-fluorinated polymer-bound acid, 83251S (20 March 2012); doi: 10.1117/12.917018
Proc. SPIE 8325, Ionic carbamate photoacid/photobase generators for the advancement of dual-tone photolithography, 83251T (19 March 2012); doi: 10.1117/12.916496
Proc. SPIE 8325, Positive-tone chemically amplified fullerene resist, 83251U (19 March 2012); doi: 10.1117/12.916472
Proc. SPIE 8325, Synthesize and polymerization of novel photocurable vinyl ether monomers containing perfluorinated aromatic units, 83251V (19 March 2012); doi: 10.1117/12.916674
Proc. SPIE 8325, Reduced Zeta potential through use of cationic adhesion promoter for improved resist process performance and minimizing material consumption, 83251W (19 March 2012); doi: 10.1117/12.917856
Proc. SPIE 8325, Resist surface crosslinking using amine-based reactive rinses to mitagate pattern collapse in thin film lithography, 83251X (20 March 2012); doi: 10.1117/12.928876
Proc. SPIE 8325, Application of aziridine reactive rinses in a post-development process to reduce photoresist pattern collapse, 83251Y (20 March 2012); doi: 10.1117/12.928877
Poster Session: Novel Processing