Proceedings Volume 8326 is from: Logo
SPIE ADVANCED LITHOGRAPHY
12-16 February 2012
San Jose, California, United States
Front Matter
Proc. SPIE 8326, Front Matter: Volume 8326, 832601 (26 April 2012); doi: 10.1117/12.929042
Overlay Topics in Advanced Optical Microlithography: Joint Session with Conference 8324
Proc. SPIE 8326, Overlay metrology for low-k1: challenges and solutions, 832602 (13 March 2012); doi: 10.1117/12.916376
Proc. SPIE 8326, Spacer process and alignment assessment for SADP process, 832604 (13 March 2012); doi: 10.1117/12.916362
Invited Session
Proc. SPIE 8326, Extending the DRAM and FLASH memory technologies to 10nm and beyond, 832605 (13 March 2012); doi: 10.1117/12.920053
SMO-Modeling
Proc. SPIE 8326, Lens heating challenges for negative tone develop layers with freeform illumination: a comparative study of experimental vs. simulated results, 832607 (22 February 2012); doi: 10.1117/12.916312
Proc. SPIE 8326, Evaluation of various compact mask and imaging models for the efficient simulation of mask topography effects in immersion lithography, 832609 (13 March 2012); doi: 10.1117/12.916344
Proc. SPIE 8326, A full-chip 3D computational lithography framework, 83260A (13 March 2012); doi: 10.1117/12.916076
Multiple Patterning I
Proc. SPIE 8326, Interactions between imaging layers during LPLE double patterning lithography, 83260B (13 March 2012); doi: 10.1117/12.918058
Proc. SPIE 8326, Stack effect implementation in OPC and mask verification for production environment, 83260C (13 March 2012); doi: 10.1117/12.916059
Proc. SPIE 8326, Design compliance for spacer is dielectric (SID) patterning, 83260D (13 March 2012); doi: 10.1117/12.917986
Proc. SPIE 8326, Litho1-litho2 proximity differences for LELE and LPLE double patterning processes, 83260E (13 March 2012); doi: 10.1117/12.916156
Proc. SPIE 8326, Characterization and decomposition of self-aligned quadruple patterning friendly layout, 83260F (13 March 2012); doi: 10.1117/12.918078
Source and Mask Optimization
Proc. SPIE 8326, Source-mask optimization incorporating a physical resist model and manufacturability constraints, 83260G (13 March 2012); doi: 10.1117/12.914047
Proc. SPIE 8326, Computational process optimization of array edges, 83260H (13 March 2012); doi: 10.1117/12.916528
Proc. SPIE 8326, Mutual source, mask and projector pupil optimization, 83260I (13 March 2012); doi: 10.1117/12.916529
Proc. SPIE 8326, Application of illumination pupilgram control method with freeform illumination, 83260K (13 March 2012); doi: 10.1117/12.916594
Tools and Process Control I
Proc. SPIE 8326, Extending 1.35 NA immersion lithography down to 1x nm production nodes, 83260L (13 March 2012); doi: 10.1117/12.915807
Proc. SPIE 8326, Mix and match overlay optimization strategy for advanced lithography tools (193i and EUV), 83260M (13 March 2012); doi: 10.1117/12.916969
Proc. SPIE 8326, Imaging optics setup and optimization on scanner for SMO generation process, 83260N (13 March 2012); doi: 10.1117/12.916588
Proc. SPIE 8326, Model based OPC for implant layer patterning considering wafer topography proximity (W3D) effects, 83260O (13 March 2012); doi: 10.1117/12.918000
Proc. SPIE 8326, Process window control using CDU master, 83260Q (13 March 2012); doi: 10.1117/12.916227
Lithography at the Intersection of Optics and Chemistry: Joint Session with Conference 8325
Proc. SPIE 8326, The development of a fast physical photoresist model for OPE and SMO applications from an optical engineering perspective, 83260R (13 March 2012); doi: 10.1117/12.917030
Tools and Process Control II
Proc. SPIE 8326, High overlay accuracy for double patterning using an immersion scanner, 83260T (13 March 2012); doi: 10.1117/12.916246
Proc. SPIE 8326, Modeling for field-to-field overlay error, 83260U (13 March 2012); doi: 10.1117/12.916345
Proc. SPIE 8326, Free form source and mask optimization for negative tone resist development for 22nm node contact holes, 83260V (13 March 2012); doi: 10.1117/12.918459
Proc. SPIE 8326, Process development using negative tone development for the dark field critical layers in a 28nm node process, 83260W (13 March 2012); doi: 10.1117/12.916700
Proc. SPIE 8326, Process requirements for pitch splitting LELE double patterning at advanced logic technology node, 83260X (13 March 2012); doi: 10.1117/12.916420
Multiple Patterning/Innovative Lithography
Proc. SPIE 8326, Scanning interference evanescent wave lithography for sub-22 nm generations, 83260Y (13 March 2012); doi: 10.1117/12.917955
Proc. SPIE 8326, A solid immersion interference lithography system for imaging ultra-high numerical apertures with high-aspect ratios in photoresist using resonant enhancement from effective gain media, 83260Z (13 March 2012); doi: 10.1117/12.916295
Proc. SPIE 8326, Doubling the spatial frequency with cavity resonance lithography, 832610 (13 March 2012); doi: 10.1117/12.916222
Proc. SPIE 8326, Pupil wavefront manipulation for optical nanolithography, 832611 (13 March 2012); doi: 10.1117/12.917440
Proc. SPIE 8326, 14nm M1 triple patterning, 832612 (13 March 2012); doi: 10.1117/12.916610
Optical/DFM: Joint Session with Conference 8327
Proc. SPIE 8326, Sub-20nm logic lithography optimization with simple OPC and multiple pitch division, 832613 (13 March 2012); doi: 10.1117/12.914916
Proc. SPIE 8326, Fast source independent estimation of lithographic difficulty supporting large scale source optimization, 832614 (13 March 2012); doi: 10.1117/12.916433
Proc. SPIE 8326, Generator of predictive verification pattern using vision system based on higher-order local autocorrelation, 832615 (13 March 2012); doi: 10.1117/12.916306
Proc. SPIE 8326, Demonstration of an effective flexible mask optimization (FMO) flow, 832616 (13 March 2012); doi: 10.1117/12.916168
Proc. SPIE 8326, Full field lithographical verification using scanner and mask intrafield fingerprint, 832617 (13 March 2012); doi: 10.1117/12.916151
Proc. SPIE 8326, Pattern selection in high-dimensional parameter spaces, 832618 (13 March 2012); doi: 10.1117/12.916352
OPC
Proc. SPIE 8326, Multiple-image-depth modeling for hotspot and AF printing detections, 832619 (13 March 2012); doi: 10.1117/12.917402
Proc. SPIE 8326, Process optimization through model based SRAF printing prediction, 83261A (13 March 2012); doi: 10.1117/12.916731
Proc. SPIE 8326, Finite element models of lithographic mask topography, 83261B (13 March 2012); doi: 10.1117/12.916957
Proc. SPIE 8326, Resist loss in 3D compact modeling, 83261C (13 March 2012); doi: 10.1117/12.916582
Proc. SPIE 8326, Binary modeling method to check the sub-resolution assist features (SRAFs) printability, 83261D (13 March 2012); doi: 10.1117/12.916466
Tools
Proc. SPIE 8326, A study of vertical lithography for high-density 3D structures, 83261E (13 March 2012); doi: 10.1117/12.917877
Proc. SPIE 8326, A reliable higher power ArF laser with advanced functionality for immersion lithography, 83261F (13 March 2012); doi: 10.1117/12.916324
Proc. SPIE 8326, Advanced light source technologies that enable high-volume manufacturing of DUV lithography extensions, 83261G (13 March 2012); doi: 10.1117/12.917827
Proc. SPIE 8326, Immersion and dry ArF scanners enabling 22nm HP production and beyond, 83261H (13 March 2012); doi: 10.1117/12.916247
Proc. SPIE 8326, Driving imaging and overlay performance to the limits with advanced lithography optimization, 83261I (13 March 2012); doi: 10.1117/12.916480
Poster Session
Proc. SPIE 8326, Modelling of side-wall angle for optical proximity correction for self-aligned double patterning, 83261J (13 March 2012); doi: 10.1117/12.916852
Proc. SPIE 8326, New methodology to predict pattern collapse for 14nm and beyond, 83261K (13 March 2012); doi: 10.1117/12.917885
Proc. SPIE 8326, Building 3D aerial image in photoresist with reconstructed mask image acquired with optical microscope, 83261L (14 March 2012); doi: 10.1117/12.917794
Proc. SPIE 8326, Wafer CD variation for random units of track and polarization, 83261N (13 March 2012); doi: 10.1117/12.917622
Proc. SPIE 8326, Field performance availability improvements in lithography light sources using the iGLX Gas Management System, 83261O (13 March 2012); doi: 10.1117/12.917594
Proc. SPIE 8326, Can fast rule-based assist feature generation in random-logic contact layout provide sufficient process window?, 83261P (13 March 2012); doi: 10.1117/12.915787
Proc. SPIE 8326, ZERODUR: bending strength data for tensile stress loaded support structures, 83261Q (13 March 2012); doi: 10.1117/12.917042