PROCEEDINGS VOLUME 8328
SPIE ADVANCED LITHOGRAPHY | 12-16 FEBRUARY 2012
Advanced Etch Technology for Nanopatterning
Proceedings Volume 8328 is from: Logo
SPIE ADVANCED LITHOGRAPHY
12-16 February 2012
San Jose, California, United States
Front Matter
Proc. SPIE 8328, Front Matter: Volume 8328, 832801 (17 April 2012); doi: 10.1117/12.928433
Overview of Nanopatterning Challenges and Opportunities
Proc. SPIE 8328, Advanced plasma etch technologies for nanopatterning, 832803 (17 March 2012); doi: 10.1117/12.920307
Proc. SPIE 8328, Ultimate top-down processes for future nanoscale devices, 832804 (16 March 2012); doi: 10.1117/12.920490
Nanopatterning for Advanced Technology Nodes
Proc. SPIE 8328, Patterning enhancement techniques by reactive ion etch, 832809 (16 March 2012); doi: 10.1117/12.920309
Proc. SPIE 8328, Plasma etch transfer of self-assembled polymer patterns, 83280A (17 March 2012); doi: 10.1117/12.920311
Proc. SPIE 8328, Patterning of CMOS device structures for 40-80nm pitches and beyond, 83280B (17 March 2012); doi: 10.1117/12.916447
Proc. SPIE 8328, Plasma etch challenges for porous low-k materials for 32nm and beyond, 83280C (17 March 2012); doi: 10.1117/12.916608
Proc. SPIE 8328, Towards new plasma technologies for 22nm gate etch processes and beyond, 83280D (17 March 2012); doi: 10.1117/12.920312
Proc. SPIE 8328, Etch challenges for 1xnm NAND flash, 83280F (17 March 2012); doi: 10.1117/12.920313
Plasma and Photoresist Interactions
Proc. SPIE 8328, Plasma treatment to improve linewidth roughness during gate patterning, 83280H (17 March 2012); doi: 10.1117/12.920314
Proc. SPIE 8328, The effects of plasma exposure on low-k dielectric materials, 83280I (17 March 2012); doi: 10.1117/12.917967
Proc. SPIE 8328, Photoresist strip challenges for advanced lithography at 20nm technology node and beyond, 83280J (17 March 2012); doi: 10.1117/12.918054
Proc. SPIE 8328, Dry etching challenges for patterning smooth lines: LWR reduction of extreme ultra violet photo resist, 83280L (17 March 2012); doi: 10.1117/12.919055
Proc. SPIE 8328, Self-assembly patterning using block copolymer for advanced CMOS technology: optimisation of plasma etching process, 83280M (17 March 2012); doi: 10.1117/12.916399
Proc. SPIE 8328, EUV resist curing technique for LWR reduction and etch selectivity enhancement, 83280N (17 March 2012); doi: 10.1117/12.916340
Proc. SPIE 8328, Mandrel and spacer engineering based self-aligned triple patterning, 83280O (17 March 2012); doi: 10.1117/12.899888
Proc. SPIE 8328, Transfer optimized dry development process of sub-32nm HSQ/AR3 BLR resist pillar from low-K etcher to metal etcher, 83280P (17 March 2012); doi: 10.1117/12.915488
Poster Session
Proc. SPIE 8328, How much further can lithography process windows be improved?, 83280Q (17 March 2012); doi: 10.1117/12.915672
Proc. SPIE 8328, Removal of SU-8 resists using hydrogen radicals generated by tungsten hot-wire catalyzer, 83280R (17 March 2012); doi: 10.1117/12.916033
Proc. SPIE 8328, Pattern transfer from the e-beam resist, over the nanoimprint resist and to the final silicon substrate, 83280S (17 March 2012); doi: 10.1117/12.916285
Proc. SPIE 8328, Exploration of suitable dry etch technologies for directed self-assembly, 83280T (17 March 2012); doi: 10.1117/12.916349
Proc. SPIE 8328, High aspect ratio etching using a fullerene derivative spin-on-carbon hardmask, 83280U (17 March 2012); doi: 10.1117/12.916426
Proc. SPIE 8328, 3d modeling of LER transfer from the resist to the underlying substrate: the effect of the resist roughness, 83280V (17 March 2012); doi: 10.1117/12.921692
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